J/SST/U308 Series N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 -1 to -6.5 J309 -1 to -4 -25 8 12 -25 10 12 J310 -2 to -6.5 -25 8 24 SST308 -1 to -6.5 -25 8 12 SST309 -1 to -4 -25 10 12 SST310 -2 to -6.5 -25 8 24 U309 -1 to -4 -25 10 12 U310 -2.5 to -6 -25 10 24 Features Benefits Applications Excellent High Frequency Gain: Gps 11.5 dB @ 450 MHz Very Low Noise: 2.7 dB @ 450 MHz Very Low Distortion High ac/dc Switch Off-Isolation Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches Description 02/$!#7*,2+1 !- ')'1'#0 +" '0 3') )# 4'1& 1-#7+"7/##) ,-1',+0 &# 0#/'#0 &#/*#1'!))570#)#" 7 7 -!(%# 02--,/10 $2)) *')'1/5 -/,!#00'+% ## ')'1/5 +" !(%'+% +$,/*1',+ $,/ $2/1&#/ "#1')0 &# 0#/'#0 ,$$#/0 02-#/ *-)'$'!1',+ !&/!1#/'01'!0 $ 0-#!') '+1#/#01 '0 '10 &'%&7$/#.2#+!5 -#/$,/*+!# 3#+ 1 6 1&'0 0#/'#0 ,$$#/0 &'%& -,4#/ %'+ 1 ),4 +,'0# ,47!,01 0#/'#0 7 7 -!(%'+% 02--,/10 21,*1#" 00#* )5 4'1& 1-#7+"7/##) ,-1',+0 &# 0#/'#0 7 7 -!(%# -/,3'"#0 TO-226AA (TO-92) D 1 S 2 G 3 ,/ 0'*')/ "2) -/,"2!10 -!(%#" '+ 1&# 7 0## 1&# "1 0&##1 TO-206AC (TO-52) TO-236 (SOT-23) D S 1 3 Top View J308 J309 J310 S 1 G 2 Top View SST308 (Z8)* SST309 (Z9)* SST310 (Z0)* *Marking Code for TO-236 2 3 D G and Case Top View U309 U310 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70237. Applications information may also be obtained via FaxBack, request document #70597. Siliconix S-52424--Rev. F, 14-Apr-97 1 J/SST/U308 Series Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current : (J/SST Prefixes) . . . . . . . . . . . . . . . . 10 mA (U Prefix) . . . . . . . . . . . . . . . . . . . . . 20 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Storage Temperature : (J/SST Prefixes) . . . . . . . . . . -55 to 150_C (U Prefix) . . . . . . . . . . . . . . . -65 to 175_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C (J/SST Prefixes)a . . . . . . . . . . . . . 350 mW (U Prefix)b . . . . . . . . . . . . . . . . . . 500 mW Power Dissipation : Notes a. Derate 2.8 mW/_C above 25_C b. Derate 4 mW/_C above 25_C Specificationsa for J/SST308, J/SST309 and J/SST310 Limits J/SST308 Parameter Symbol Test Conditions Typb V(BR)GSS IG = -1 A , VDS = 0 V -35 VGS(off) VDS = 10 V, ID = 1 nA J/SST309 J/SST310 Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current IDSS IGSS VDS = 10 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C -25 -25 -25 V -1 -6.5 -1 -4 -2 -6.5 12 60 12 30 24 60 mA -0.002 -1 -1 -1 nA -0.001 -1 -1 -1 A IG VDG = 9 V, ID = 10 mA -15 pA Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 35 Gate-Source Forward Voltage VGS(F) IG = 10 mA VDS = 0 V J 0.7 1 1 1 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source I Input C Capacitance i Ciss Common-Source R Reverse T Transfer f C Capacitance i Equivalent Input Noise Voltage Crss en 14 VDS = 10 V,, ID = 10 mA f = 1 kH kHz VDS = 10 V VGS = -10 V f = 1 MHz 10 mS 8 110 250 250 250 5 5 5 2.5 2.5 2.5 J 4 SST 4 J 1.9 SST 1.9 VDS = 10 V, ID = 10 mA f = 100 Hz 8 S pF nV Hz 6 High Frequency Common-Gate F Forward dT Transconductance d f = 105 MHz gfg Common-Gate O Output C Conductance d gog Common-Gate Power Gaind Gpg Noise Figure NF VDS = 10 V ID = 10 mA A 14 f = 450 MHz 13 f = 105 MHz 0.16 f = 450 MHz 0.55 f = 105 MHz 16 f = 450 MHz 11.5 f = 105 MHz 1.5 f = 450 MHz 2.7 mS dB Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW 300 s duty cycle 3%. d. Gain (Gpg) measured at optimum input noise match. 2 NZB Siliconix S-52424--Rev. F, 14-Apr-97 J/SST/U308 Series Specificationsa for U309 and U310 Limits U309 U310 Symbol Test Conditions Typb Min V(BR)GSS IG = -1 A , VDS = 0 V -35 -25 VGS(off) VDS = 10 V, ID = 1 nA -1 -4 -2.5 -6 Saturation Drain Currentc IDSS VDS = 10 V, VGS = 0 V 12 30 24 60 mA Gate Reverse Current IGSS Parameter Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate Operating Current VGS = -15 V, VDS = 0 V TA = 125_C -25 V -0.002 -0.15 -0.15 nA -0.001 -0.15 -0.15 A IG VDG = 9 V, ID = 10 mA -15 pA Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 35 Gate-Source Forward Voltage VGS(F) IG = 10 mA , VDS = 0 V 0.7 1 1 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en 14 10 mS 10 VDS = 10 V,, ID = 10 mA f = 1 kH kHz 110 250 250 4 5 5 1.9 2.5 2.5 S VDS = 10 V,, VGS = -10 V f = 1 MHz MH VDS = 10 V, ID = 10 mA f = 100 Hz pF nV Hz 6 High Frequency Common-Gate F Forward dT Transconductance d gfg Common-Gate O Output C Conductance d gog Common-Gate Power Gaind Gpg Noise Figure NF VDSS = 10 V A ID = 10 mA f = 105 MHz 14 f = 450 MHz 13 f = 105 MHz 0.16 f = 450 MHz 0.55 f = 105 MHz 16 14 14 f = 450 MHz 11.5 10 10 f = 105 MHz 1.5 2 2 f = 450 MHz 2.7 3.5 3.5 mS dB Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW 300 s duty cycle 3%. d. Gain (Gpg) measured at optimum input noise match. Siliconix S-52424--Rev. F, 14-Apr-97 NZB 3 J/SST/U308 Series Typical Characteristics Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 40 60 30 gfs 40 20 IDSS 20 10 0 IG @ ID = 10 mA 100 -2 -1 -3 -4 IGSS @ 125_C 100 pA 200 A 10 pA 10 mA TA = 25_C 1 pA 0.1 pA -5 IGSS @ 25_C 0 3 6 9 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 20 300 60 180 rDS gos 40 120 20 60 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz g fs - Forward Transconductance (mS) 240 g - Output Conductance ( S) 80 TA = -55_C 12 8 -2 -3 -4 25_C 125_C 4 0 -1 VDS = 10 V f = 1 kHz 16 0 0.1 -5 1 VGS(off) - Gate-Source Cutoff Voltage (V) 10 ID - Drain Current (mA) Output Characteristics Output Characteristics 15 30 VGS(off) = -3 V VGS(off) = -1.5 V VGS = 0 V 12 VGS = 0 V I D - Drain Current (mA) 24 -0.2 V 9 -0.4 V 6 -0.6 V 3 -0.4 V 18 -0.8 V -1.2 V 12 -1.6 V 6 -0.8 V -2.0 V -2.4 V -1.0 V 0 0 0 0.2 0.4 0.6 0.8 VDS - Drain-Source Voltage (V) 4 15 VDG - Drain-Gate Voltage (V) VGS(off) = -3 V 0 12 VGS(off) - Gate-Source Cutoff Voltage (V) 0 I D - Drain Current (mA) 200 A TA = 125_C 1 nA 0 0 rDS(on) - Drain-Source On-Resistance (k ) 10 nA I G - Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 80 Gate Leakage Current 50 g fs - Forward Transconductance (mS) I DSS - Saturation Drain Current (mA) 100 1 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) Siliconix S-52424--Rev. F, 14-Apr-97 J/SST/U308 Series Typical Characteristics (Cont'd) Output Characteristics Output Characteristics 20 50 VGS(off) = -1.5 V VGS(off) = -3 V VGS = 0 V VGS = 0 V 40 -0.2 V I D - Drain Current (mA) I D - Drain Current (mA) 16 12 -0.4 V 8 -0.6 V -0.8 V 4 -0.4 V 30 -0.8 V -1.2 V 20 -1.6 V 10 -2.0 V -1.0 V 0 -2.4 V 0 0 2 4 6 8 10 0 2 VDS - Drain-Source Voltage (V) Transfer Characteristics 10 Transfer Characteristics 100 VGS(off) = -1.5 V VDS = 10 V VGS(off) = -3 V VDS = 10 V 80 I D - Drain Current (mA) 24 I D - Drain Current (mA) 8 6 VDS - Drain-Source Voltage (V) 30 TA = -55_C 18 25_C 12 125_C 6 TA = -55_C 60 25_C 40 125_C 20 0 0 0 -0.4 -0.8 -1.2 -1.6 -2 0 -0.6 VGS - Gate-Source Voltage (V) -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage 30 50 VGS(off) = -1.5 V 24 VDS = 10 V f = 1 kHz g fs - Forward Transconductance (mS) g fs - Forward Transconductance (mS) 4 TA = -55_C 25_C 18 125_C 12 6 0 VGS(off) = -3 V VDS = 10 V f = 1 kHz 40 TA = -55_C 30 25_C 20 125_C 10 0 0 -0.4 -0.8 -1.2 -1.6 VGS - Gate-Source Voltage (V) Siliconix S-52424--Rev. F, 14-Apr-97 -2 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) 5 J/SST/U308 Series Typical Characteristics (Cont'd) On-Resistance vs. Drain Current 80 g fs R L AV + 1 ) R g L os 80 VGS(off) = -1.5 V 60 40 VGS(off) = -3 V 20 Assume VDD = 15 V, VDS = 5 V R L + 10 V ID 60 VGS(off) = -1.5 V 40 20 0 VGS(off) = -3 V 0 1 10 100 10 ID - Drain Current (mA) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 10 12 VDS = 0 V 6 VDS = 5 V 3 0 f = 1 MHz 8 6 VDS = 0 V 4 2 VDS = 5 V 0 0 -8 -4 -12 -16 -20 0 VGS - Gate-Source Voltage (V) -8 -4 -12 -16 -20 VGS - Gate-Source Voltage (V) Forward Admittance vs. Frequency Input Admittance vs. Frequency 100 100 gig -gfg 10 (mS) (mS) 10 big 1 bfg 1 TA = 25_C VDG = 10 V ID = 10 mA Common-Gate TA = 25_C VDG = 10 V ID = 10 mA Common-Gate 0.1 0.1 100 200 500 f - Frequency (MHz) 6 1 ID - Drain Current (mA) f = 1 MHz 9 0.1 C rss - Reverse Feedback Capacitance (pF) 15 C iss - Input Capacitance (pF) Circuit Voltage Gain vs. Drain Current 100 A V - Voltage Gain rDS(on) - Drain-Source On-Resistance ( ) 100 1000 100 200 500 1000 f - Frequency (MHz) Siliconix S-52424--Rev. F, 14-Apr-97 J/SST/U308 Series Typical Characteristics (Cont'd) Output Admittance vs. Frequency Reverse Admittance vs. Frequency 100 10 TA = 25_C VDG = 10 V ID = 10 mA Common-Gate TA = 25_C VDG = 10 V ID = 10 mA Common-Gate 10 1 bog (mS) (mS) -brg +grg -grg 0.1 gog 1 0.1 0.01 100 200 500 100 1000 Equivalent Input Noise Voltage vs. Frequency VGS(off) = -3 V 16 g - Output Conductance ( S) (nV / Hz) e n - Noise Voltage 1000 Output Conductance vs. Drain Current 150 VDS = 10 V 12 ID = 1 mA 8 4 500 f - Frequency (MHz) f - Frequency (MHz) 20 200 ID = 10 mA 0 VDS = 10 V f = 1 kHz 120 90 TA = -55_C 60 25_C 30 125_C 0 10 100 1k f - Frequency (Hz) Siliconix S-52424--Rev. F, 14-Apr-97 10 k 100 k 0.1 1 10 ID - Drain Current (mA) 7