MMBD7000 Discrete POWER & Signal Technologies N MMBD7000 CONNECTION DIAGRAM 3 3 3 5C 2 SOT-23 1 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 70 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 A A C TJ Operating Junction Temperature 150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max Units MMBD7000* 350 2.8 357 mW mW/C C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions BV Breakdown Voltage I R = 100 A IR Reverse Current VF Forward Voltage CO Diode Capacitance VR = 100 V VR = 50 V VR = 50 V, TA = 125C I F = 1.0 mA I F = 10 mA I F = 50 mA I F = 150 mA VR = 0, f = 1.0 MHz TRR Reverse Recovery Time I F = 10 mA, IRR = 1.0 mA, RL = 100 Min Max Units 500 300 100 700 820 1.1 1.25 1.5 nA nA A mV mV V V pF 4.0 nS 100 550 670 0.75 V MMBD7000 High Conductance Ultra Fast Diode