Discrete POWER & Signal
Technologies
N
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
MMBD7000
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
5C
3
12
Symbol Parameter Value Units
WIV Wor king Inverse Voltage 70 V
IOAverage Rectified Current 200 mA
IFDC Forward Curre nt 600 mA
ifRecurrent Peak Forward Current 700 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond 1.0
2.0 A
A
Tstg Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature 150 °C
Symbol Characteristic Max Units
MMBD7000*
PDTota l De vice Dissip at i on
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
3
21
CO NNECTIO N DIAGRAM
SOT-23
3
1
2
MMBD7000
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Condition s Min Max Un its
BVBr eakdown V olt age IR = 1 00 µA100 V
IRReverse Current VR = 1 00 V
VR = 50 V
VR = 50 V, TA = 125°C
500
300
100
nA
nA
µA
VFForward Voltage IF = 1.0 mA
IF = 10 mA
IF = 5 0 mA
IF = 1 50 m A
550
670
0.75
700
820
1.1
1.25
mV
mV
V
V
CODiode Capacitance VR = 0, f = 1.0 MHz 1. 5 pF
TRR Reverse Recovery Time IF = 10 mA, IRR = 1.0 mA,
RL = 100Ω4.0 nS
MMBD7000
High Conductance Ultra Fast Diode
(continued)
