ISL9K3060G3 30A, 600V StealthTM Dual Diode General Description Features The ISL9K3060G3 is a StealthTM dual diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. * Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated Applications * Switch Mode Power Supplies * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode Formerly developmental type TA49411. Package Symbol JEDEC STYLE TO-247 K ANODE 2 CATHODE CATHODE ANODE 1 (BOTTOM SIDE METAL) A1 A2 Device Maximum Ratings (per leg) TC = 25C unless otherwise noted Symbol VRRM Parameter Repetitive Peak Reverse Voltage Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current (TC = 125oC) Total Device Current (Both Legs) 30 60 A A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 70 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A Power Dissipation 200 W Avalanche Energy (1A, 40mH) 20 mJ -55 to 175 C 300 260 C C VRWM VR PD EAVL TJ, TSTG TL TPKG Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (c)2002 Fairchild Semiconductor Corporation ISL9K3060G3 Rev. C ISL9K3060G3 May 2002 Device Marking K3060G3 Device ISL9K3060G3 Package TO-247 Tape Width - Quantity - Electrical Characteristics (per leg) TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units TC = 25C - - 100 A TC = 125C - - 1.0 mA Off State Characteristics IR Instantaneous Reverse Current VR = 600V On State Characteristics VF Instantaneous Forward Voltage IF = 30A TC = 25C - 2.1 2.4 V TC = 125C - 1.7 2.1 V - 120 - pF Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A Switching Characteristics trr trr IRM(REC) QRR Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR dIM/dt Maximum Reverse Recovery Current Reverse Recovered Charge IF = 1A, dIF/dt = 100A/s, VR = 30V - 27 35 ns IF = 30A, dIF/dt = 100A/s, VR = 30V - 36 45 ns IF = 30A, dIF/dt = 200A/s, VR = 390V, TC = 25C - 36 - ns - 2.9 - A - 55 - nC ns IF = 30A, dIF/dt = 200A/s, VR = 390V, TC = 125C - 110 - - 1.9 - - 6 - A - 450 - nC IF = 30A, dIF/dt = 1000A/s, VR = 390V, TC = 125C - 60 - ns - 1.25 - Maximum di/dt during tb - 21 - A 730 - nC - 800 - A/s Thermal Characteristics RJC Thermal Resistance Junction to Case - - 1.0 C/W RJA Thermal Resistance Junction to Ambient TO-247 - - 30 C/W 1560(c)2002 Fairchild Semiconductor Corporation ISL9K3060G3 Rev. C ISL9K3060G3 Package Marking and Ordering Information ISL9K3060G3 Typical Performance Curves 60 5000 175oC o 175 C 1000 25oC 150oC IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 50 40 o 125 C 30 20 100oC 10 0 0 0.5 1.0 1.5 2.0 2.5 150oC 125oC 100 100oC 75oC 10 1 25oC 0.1 100 3.0 200 VF, FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 100 100 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 600 VR = 390V, TJ = 125oC 70 60 50 40 30 20 tb AT IF = 60A, 30A, 15A 80 60 40 20 10 ta AT dIF/dt = 200A/s, 500A/s, 800A/s 0 10 20 30 40 50 ta AT IF = 60A, 30A, 15A 0 200 60 400 600 800 1000 1200 1400 dIF /dt, CURRENT RATE OF CHANGE (A/s) IF, FORWARD CURRENT (A) Figure 3. ta and tb Curves vs Forward Current 20 VR = 390V, TJ = 125oC dIF/dt = 800A/s 18 16 14 dIF/dt = 500A/s 12 10 8 dIF/dt = 200A/s 6 0 10 20 30 40 50 60 IF, FORWARD CURRENT (A) Figure 5. Maximum Reverse Recovery Current vs Forward Current 1560(c)2002 Fairchild Semiconductor Corporation 1600 Figure 4. ta and tb Curves vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 500 120 VR = 390V, TJ = 125oC 80 4 400 Figure 2. Reverse Current vs Reverse Voltage 90 tb AT dIF/dt = 200A/s, 500A/s, 800A/s 0 300 VR , REVERSE VOLTAGE (V) 30 VR = 390V, TJ = 125oC IF = 60A 25 IF = 30A IF = 15A 20 15 10 5 0 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 6. Maximum Reverse Recovery Current vs dIF/dt ISL9K3060G3 Rev. C ISL9K3060G3 2.5 QRR, REVERSE RECOVERED CHARGE (nC) S, REVERSE RECOVERY SOFTNESS FACTOR Typical Performance Curves (Continued) VR = 390V, TJ = 125oC IF = 60A IF = 30A 2.0 1.5 IF = 15A 1.0 0.5 200 400 600 800 1000 1200 1400 1200 VR = 390V, TJ = 125oC 1000 800 IF = 30A 600 IF = 15A 400 200 200 1600 IF = 60A dIF /dt, CURRENT RATE OF CHANGE (A/s) 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Softness Factor vs dIF/dt Figure 8. Reverse Recovered Charge vs dIF/dt 1000 IF(AV), AVERAGE FORWARD CURRENT (A) CJ , JUNCTION CAPACITANCE (pF) 35 800 600 400 200 0 0.1 1 10 100 VR , REVERSE VOLTAGE (V) Figure 9. Junction Capacitance vs Reverse Voltage THERMAL IMPEDANCE ZJA, NORMALIZED 1.0 30 25 20 15 10 5 0 115 135 125 145 155 165 175 TC, CASE TEMPERATURE (oC) Figure 10. DC Current Derating Curve DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZJA x RJA + TA 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 11. Normalized Maximum Transient Thermal Impedance 1560(c)2002 Fairchild Semiconductor Corporation ISL9K3060G3 Rev. C ISL9K3060G3 Test Circuit and Waveforms Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD Q1 VDD DUT IL t0 Figure 14. Avalanche Energy Test Circuit 1560(c)2002 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms ISL9K3060G3 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5