©2002 Fairchild Semiconductor Corporation
May 2002
ISL9K3060G3
ISL9K3060G3 Rev. C
ISL9K3060G3
30A, 600V Stealth™ Dual Diode
General Description
The ISL9K3060G3 is a Stealth™ dual diode optimized for low
loss perf ormance i n high frequenc y hard s witched applica tions.
The Stealt h™ family exhibits low reverse recovery current
(IRM(REC)) and ex ceptionally s oft recovery under typical
opera t i n g c o nd i ti ons.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
appli ca tions. The low IRM(REC) and short ta phase reduce loss
in switching tran s is to rs. Th e so ft r ec over y mi nim i zes ringi ng ,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the St ealth™ diode with an SMPS IGBT to
pro vide the most eff i cient an d hi ghest power density design at
lower cost.
Formerly developmental type TA49411.
Features
• Soft R e c overy . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 1.2
• Fast R e c overy . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FW D
• Snubber Diode
Device Maximum Ratings (per leg) TC = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VRRM Repetitive Peak Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forw ard Current (TC = 125oC)
Total Device Current (Both Legs) 30
60 A
A
IFRM Repetitive Peak Surge Current (20kHz Square Wave) 70 A
IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A
PDPower Dissipation 200 W
EAVL Avalanche Energy (1A, 40mH) 20 mJ
TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334 300
260 °C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
JEDEC STYLE TO-247
A1
K
A2
CATHODE
(BOTTOM SIDE
CATHODE
ANODE 2
ANODE 1
METAL)
Package Symbol
1560©2002 Fairchild Semiconductor Corporation ISL9K3060G3 Rev. C
ISL9K3060G3
Package Marking and Ordering Information
Electrical Characteristics (per leg) TC = 25°C unless otherwise noted
Off State Characteristics
On State Charac t eris ti cs
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Dev ice P ackage Tape Width Quantity
K3060G3 ISL9K3060G3 TO-247 - -
Symbol P arameter Test Conditions Min Typ Max Units
IRInstantaneous Reve rse Current VR = 600V TC = 25°C - - 100 µA
TC = 125°C--1.0mA
VFInstantaneous Forward Voltage IF = 30A TC = 25°C-2.12.4V
TC = 125°C-1.72.1V
CJJunction Capacitance VR = 10V, IF = 0A - 120 - pF
trr Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, V R = 30V - 27 35 ns
IF = 30A, dIF/dt = 100A/µs, VR = 30V - 36 45 ns
trr Reverse Recovery Time IF = 30A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
-36-ns
IRM(REC) Maximum Reverse Recovery Current - 2.9 - A
QRR Reve rse Recovered Charge - 55 - nC
trr Reverse Recovery Time IF = 30A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
- 110 - ns
S Softness Factor (tb/ta)-1.9-
IRM(REC) Maximum Reverse Recovery Current - 6 - A
QRR Reverse Recovered Charge - 450 - nC
trr Reverse Recovery Time IF = 30A,
dIF/dt = 1000A/µs,
VR = 390V,
TC = 125°C
-60-ns
S Softness Factor (tb/ta) - 1.25 -
IRM(REC) Maximum Reverse Recovery Current - 21 - A
QRR Reverse Recovered Charge 730 - nC
dIM/dt Maximum di/dt during tb- 800 - A/µs
RθJC Thermal Resistance Junction to Case - - 1.0 °C/W
RθJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W
1560©2002 Fairchild Semiconductor Corporation ISL9K3060G3 Rev. C
ISL9K3060G3
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
60
50
40
00 1.0 2.0 3.0
30
20
10
0.5 1.5 2.5
25oC
175oC
100oC
150oC
125oC
10
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
100
100 200 500 600400
1000
1
0.1
175oC
25oC
100oC
300
5000
75oC
150oC
125oC
IF, FORWARD CURRENT (A)
0
0
20
40
60
80
100
20 60
t, RECOVERY TIMES (ns )
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
VR = 390V, TJ = 125oC
10 30 40 50
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
90
70
50
30
10
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
0
20
40
60
80
120
t, RECOVERY TIMES (ns)
VR = 390V, TJ = 125oC
tb AT IF = 60A, 30A, 15A
1000 16001400400200 600 800 1200
ta AT IF = 60A, 30A, 15A
100
IF, FORWARD CURRENT (A)
4
8
10
12
14
18
20
IRM(REC), MAX REVERSE RECOVERY CURRENT (A)
dIF/dt = 800A/µs
dIF/dt = 500A/µs
dIF/dt = 200A/µs
VR = 390V, TJ = 125oC
020 6010 30 40 50
6
16
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
0
5
10
15
20
25
1000 1600
VR = 390V, TJ = 125oCIF = 6 0A
IF = 15A
IRM(REC), MAX REVERSE RECOVERY CURRENT (A)
1400400200 600 800 1200
30
IF = 30A
1560©2002 Fairchild Semiconductor Corporation ISL9K3060G3 Rev. C
ISL9K3060G3
Figure 7. Reverse Recovery Softness Factor vs
dIF/dt Figure 8. Reverse Recov ered Charge vs dIF/dt
Figure 9. Junction Capacitance vs Reve rs e
Voltage Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves (Continued)
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
0.5
1.0
1.5
2.0
2.5 VR = 390V, TJ = 125oC
IF = 60A
IF = 30A
IF = 15A
S, REVERSE RECOVERY SOFTNESS FACTOR
1000 16001400400200 600 800 1200
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
200
400
600
800
1000
1200 VR = 390V, TJ = 125oCIF = 60A
IF = 30A
IF = 15A
QRR, REVERSE RECOVERED CHARGE (nC)
1000 16001400400200 600 800 1200
400
0
800
600
200
1000
VR, REVERSE VOLTAGE (V)
CJ, JUNCTION CAPACITANCE (pF)
0.1 1 10010
5
0135 145 165115 175155
25
30
35
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
125
20
10
15
t, RECTANGULAR PULSE DURATION (s)
10-5 10-2 10-1
ZθJA, NORMALIZED
THERMAL IMPEDANCE
0.01 10-4 10-3
SINGLE PUL SE
100
0.1
101
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
PDM
t1
t2
1.0
1560©2002 Fairchild Semiconductor Corporation ISL9K3060G3 Rev. C
ISL9K3060G3
Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definit ions
Figure 14. Avalanche Energy Test Circuit Figure 15. Avalan che Curr ent and Voltage
Waveforms
Typical Performance Curves (Continued)
RG
L
VDD
MOSFET
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
V
DD
= 50V
IV
t0t1t2
IL
VAVL
t
IL
Test Circuit and Waveforms
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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