11
<TRANSISTOR ARRAY>
M54563FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
2012.May
DESCRIPTION
M54563FP is an eight-circuit output-sourcing darlington
transistor array. The circuits are made of PNP and NPN
transistors. This semiconductor inte gra te d circuit perf orms hig h
current driving with extremely low input-curre nt sup pl y.
FEATURES
●High breakdown voltage (BVCEO > 50V)
●High-current driving (Io(max) = –500mA)
●With clamping diodes
●Driving available with PMOS IC output of 6 ~ 16V or
with TTL output
●Output current-sourcing type
APPLICATIONS
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic systems
and relays, solenoids, or small motors.
FUNCTION
The M54563FP each have eight circuits, which are made of
input inverters and current-sourcing outputs.
The outputs are made of PNP transistors and NPN
Darlington tra nsistors. The PNP transistor base current is
constant. A clamping diode is provided between each output
and GND. VS and GND are used commonly among the eight
circuits.
The inputs have resistance of 3kΩ, and voltage of up to 10V is
applicable. Output current is 500 mA maximum. Supply voltage
VS is 50V maximum.
mA– 500Current per circuit output, H
Output currentIO
℃
–55 ～+125Storage temperature Tstg
℃
–20 ～+75Operating t emp e ratur e Topr W1.10Ta = 25℃, when mounted on board
Power dissipation
PdV50
Clamping diode reverse voltage
VR
mA– 500
Clamping diode forward current
IF
V–0.5 ～+10
Input voltageVIV50
Supply voltageVS
V–0.5 ～+50Output , L
Collector-emitter voltage
VCEO
Unit Ratings Conditions Parameter Symbol
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
CIRCUIT DIAGRAM
The eight circuits share the VS and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used. Unit :Ω
VS
OUTPUT
INPUT 3K
20K
3K
GND
1.5K
7.2K
# : Unused Input pins must be connected to GND.
PIN CONFIGURATION
Package type 20P2N-A
3
4
5
6
7
8
9
10
18
17
16
15
14
13
12
11
→O2
→O3
→O4
→O5
→O6
→O7
→O8
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
IN8→
Vs GND
OUTPUT
INPUT
219 →O1
IN1→
120
NC NC
NC : No connection
○
#
#
<TRANSISTOR ARRAY>
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
M54563FP
2
2012.May
*：The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions.
# : Unused Input pins must be connected to GND.
Duty Cycle
no more than 5%
V0.2
－
0
“L” input voltage VIL
V10
－
2.4
“H” input voltage VIH
–100
－
0
Duty Cycle
no more than 30% mA
–350
－
0
Output current (Current per 1
circuit when 8 circuits are
coming on simultaneously)
IO
V50
－
0
Supply voltageVS
maxtypmin Unit
Limits
ParameterSymbol
RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75℃)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃）
ｎｓ
—4800—
Turn-off time
toff
ｎｓ
—100—
CL= 15pF（note 1）
Turn-on time
ton maxtypmin Unit
Limits
Test conditionsParameterSymbol
#
#
NOTE 1 TEST CIRCUIT TIMING DIAGRAM
OUTPUT
INPUT 50%
50%
ｔon
50%
50%
ｔoff
50Ω CL
RL
PG
INPUT
OUTPUT
Measured
device
(1) Pulse generator (PG) characteristics: PRR = 1kHz,
tw = 10ms, tr = 6ns, tf = 6ns, ZO= 50Ω,VI= 0 to 2.4V
(2) Input-output conditions : RL= 30Ω, VS= 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
VS
—
—
—
—
—
VS= 10V, VI= 2.4V, IO= -100mA
—
min Unit
V
-2.4-1.35IF= -350mA
Clampingdiodeforward
voltage
VF
5.03.0VI= 25V
μA
100—VR= 50V
Clampingdiodereversecurrent
IR
mA
15.05.6VS= 50V, VI= 3V (all input)
Supply current
IS
mA
1.00.6VI= 5V
Input current
II
2.01.45—V
2.41.6—VS= 10V, VI= 2.4V, IO= -350mA
Collector-emitter saturation
voltage
VCE(sat)
μA
100—VS= 50V, VI= 0.2V
Supplyleakcurrent
IS(leak)
maxtyp*
Limits
Test conditionsParameterSymbol
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = －20～＋75℃）
<TRANSISTOR ARRAY>
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
M54563FP
3
2012.May
0 0.5 1.0 1.5 2.0
02.5
Ta=25℃
Ta=-20℃
Ta=75℃
-100
-200
-300
-400
VS=10V
VI=2.4V
Clamping Diode Characteristics
Forward bias voltage VF(V)
Forward bias current IF(mA)
Output current IO(mA)
Grounded Emitter Transfer Characteristics
Input voltage VI(V)
Duty cycle (%)
Output current IO(mA)
Duty-Cycle-Output current Characteristics
Duty cycle (%)
Output current IO(mA)
Duty-Cycle-Output current Characteristics
Output Satura ti on Volt ag e
Collector Current Characteristics
Collector saturation voltage VCE(sat) (V)
Output current IO(mA)
Thermal Derating Factor Characteristics
Ambient temperature Ta(℃)
Power dissipation Pd (W)
①
②
③
④
⑥⑦
⑤
⑧
①
②
③
④
⑤
⑥
⑦
⑧
0 0.5 1.0 1.5 2.0
0
100
200
300
400
Ta=25℃
Ta=-20℃
Ta=75℃
0 0.2 0.4 0.6 0.8
01.0
Ta=25℃
Ta=-20℃
Ta=75℃
-100
-200
-300
-400
VS=20V
VS-VO=4V
TYPICAL CHARACTERISTICS
0 25 50 75 100
0
0.5
1.0
1.5
0 20 60 80 100
0
-100
-200
-300
40
-400
0 20 60 80 10040
0
-100
-200
-300
-400
•The collector current values
represent the current per circuit .
•Repeated frequency ≥10Hz
•The value in the c i rcle represe nts the
value of the simultaneously-operated circuit.
•Ta = 25℃
•The collector current
values represent the
current pe r circuit.
•Repeated frequency ≥10Hz
•The value in the c i rcle represe nts the
value of the simultaneously-operated circuit.
•Ta = 75℃
-500
2.0
-500 -500
500
-500
<TRANSISTOR ARRAY>
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
M54563FP
4
2012.May
024 8106
Ta=25℃
Ta=75℃
Ta=-20℃
VS=20V
012 45
0
0.2
0.6
0.8
3
0.4
Ta=25℃
Ta=75℃
Ta=-20℃
VS=20V
Input Chara cteristics
Input voltage VI(V)
Input current II(mA)
Input Chara cteristics
Input voltage VI(V)
Input current II(mA)
1.0
0
1
3
4
5
2
<TRANSISTOR ARRAY>
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
M54563FP
5
2012.May
PACKAGE OUTLINE
<TRANSISTOR ARRAY>
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
M54563FP
6
2012.May
© 2012 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
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