SIEMENS PNP Silicon High-Voltage Transistors BFN 25 BFN 27 @ Suitable for video output stages in TV sets and switching power supplies @ High breakdown voltage @ Low collector-emitter saturation voltage @ Complementary types: BFN 24, BFN 26 (NPN) VPSO5161 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 BFN 25 FKs Q62702-F 1066 B E Cc | SOT-23 BFN 27 FLs Q62702-F977 Maximum Ratings Parameter Symbot Values Unit BFN 25 BFN 27 Collector-emitter voltage Veco 250 300 Vv Coliector-base voltage Vcpo 250 300 Emitter-base voltage Vewo 5 Collector current Ic 200 mA Peak collector current Tom 500 Base current Ie 100 Peak base current Tem 200 Total power dissipation, 7s = 74 C Prot 360 mW Junction temperature Ti 150 Cc Storage temperature range Taig 65... + 150 Thermal Ftesistance Junction - ambient?) Risa < 280 K/AV Junction - soldering point Rinas < 210 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mmv/6 cm? Cu. Semiconductor Group 1107 5.91SIEMENS BEN 25 BFN 27 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. DC characteristics Collector-emitter breakdown voltage Viar)ceo Vv Ic=1mA BFN 25 250 - _ BFN 27 300 - ~ Collector-base breakdown voltage VierycBo Ie = 100 pA BFN 25 250 - ~ BEN 27 300 |- - Emitter-base breakdown voltage Verso | 5 - - fe = 100 pA Collector-base cutoff current Ica0 Vea = 200 V BFN 25 - - 100 nA Vea = 250 V BFN 27 - - 100 nA Ves = 200 V, Ta = 150 C BFN 25 ~ _ 20 pA Ves = 250 V, Ta = 150 C BFN 27 - - 20 pA Emitter-base cutoff current TeBo - - 100 nA Ves=3V DC current gain Are ~ Io= 1mA, Vcee=10V 25 ~ - Ie =10mMA, Vee = 10 VY 40 ~ _ Io = 30 MA, Vee = 10 V") BFN 25 40 - - BFN 27 30 - - Collector-emitter saturation voltage") Vcksat Vv Ic =20 mA, Ip=2MA BFN 25 - - 0.4 BFN 27 - ~ 0.5 Base-emitter saturation voltage") Vaesat - - 0.9 Ie = 20 MA, Ig =2mMA AC characteristics Transition frequency ff - 100 - MHz Ie = 20 MA, Vee = 10 V, f= 20 MHz Output capacitance Cobo - 2.5 - pF Ves = 30 V, f= 1 MHz 1 Pulse test conditions: r< 300 ps, D = 2%. Semiconductor Group 1108SIEMENS BFN 25 BFN 27 Total power dissipation Pio = f (Ts*; Ts) Transition frequency ft = f (Ic) * Package mounted on epoxy Vee=10V 400 OFM 25/27 EHPOGEZE 103 25/27 ERPOO629 Pry mW f MHz T 300 N \ N \ Ty 200 N 10? h \ a \ 5 100 r \ 0 7 10! 6 50 100 c = 150 19 5 10! 5 10% ma 5 10 nie Rails eo Ie Permissible pulse load Pio max / Proto = f (tp) EHP00630 3 oF 28/27 mean a Lj | Vi ot CH ri Sl San Hn 10 197% to 107% 10? ~s 10 > fy Semiconductor Group Operating range /c = f (Vceo) Ta= 25C, D=0 BFN 25/27 EHPOOGS1 105 ma Ie 102 5 x0! 5 100ms 500ms 1 107 40 5 10! 5 i027 v5 103 Vero 1109SIEMENS Collector current /c = f (Vee) Vce=10V 103 BFN 25/27 EHPO0632 mA Ie 10? 5 10! 107" 0.5 1.0 V1.5 DC current gain fre = f (Ic) Vee = 10V 103 BFN 25/27 EHPOOG34 hee 10? 10! 510 510? mA 10 oe [ 5 10 1 107! Semiconductor Group 1110 BFN 25 BFN 27 Collector cutoff current [cso = f (Ta) Vea = 200 V 104 Bs nA Tega 103 EHPOO633 107 5 to! 5 0 107! 50 100 = *C ~|, 150