1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into
a solid angle of 2 Hsteradians.
PACKAGE DIMENSIONS FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• (*) Indicates JEDEC registered values
Parameter Symbol Rating Unit
Operating Temperature TOPR -65 to +125 °C
*Storage Temperature TSTG -65 to +150 °C
*Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C
*Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C
*Continuous Forward Current IF100 mA
*Forward Current (pw, 1µs; 200Hz) IF10 A
*Reverse Voltage VR3V
*Power Dissipation (TA= 25°C)(1) PD170 mW
Power Dissipation (TC= 25°C)(2) PD1.3 W
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1N6265
GaAs INFRARED EMITTING DIODE
DESCRIPTION
• The 1N6265 is a 940 nm LED in a
narrow angle, TO-46 package.
SCHEMATIC
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
*Peak Emission Wavelength IF= 100 mA DPE 935 —955 nm
Emission Angle at 1/2 Power 0—±40 —Deg.
*Forward Voltage IF= 100 mA VF——1.7 V
*Reverse Leakage Current VR= 3 V IR——10 µA
*Total Power IF= 100 mA PO6—— mW
Rise Time 0-90% of output tr—1.0 —µs
Fall Time 100-10% of output tf—1.0 —µs
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300277 3/6/01 1 OF 3 www.fairchildsemi.com