TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1162 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2SA1162 Unit in mm High Voltage and High Current : VcEO= 50V, IC= 150mA (Max.,) Excellent hg Linearity :hyg Ug= 0.1mA)/ hg Ug = 2mA)=0.95 (Typ.) High hrp .hpR=70~400 Low Noise : NF=1dB (Typ.), 10dB (Max.) Complementary to 28C2712 e Small Package S| 3s ao | +6 MAXIMUM RATINGS (Ta = 25C) A f | 1 3 CHARACTERISTIC SYMBOL | RATING | UNIT ; c Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V 5 RAGETER Emitter-Base Voltage VEBO 5 Vv 3. COLLECTOR Collector Current Ic 150 mA |IJEDEC TO-236MOD Base Current Ip 30 mA EIAJ SC_59 Collector Power Dissipation Pc 150 mW _|l TOSHIBA 2-3F1A Junction Temperature Tj 125 Cc Weight : 0.012g Storage Temperature Range Tstg 55~125 C ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.| UNIT Collector Cut-off Current IcBo VcB= 50V, In=0 _ |-01 | 2A Emitter Cut-off Current IEBO VEB= 45V, Ic=0 |-0.1] vA DC Current Gain hFE (Note) | Veg=6V, Ic=2mA 70 400 Collector-Emitter Vv I=100mA, Ip= 10mA 01/-03| Vv Saturation Voltage CE (sat) | C= BT fl Transition Frequency ft Vcr=10V, Ic=1mA 80 | MHz Collector Output _ nan Pe Capacitance Cob Vcp= 10V, Ip=0, f=1MHz 4 7 | pF : . VcE= 6V, Ic=0.1mA, Noise Figure NF f=1kHz, Rg=10k0 1.0 10 dB Note: hpp Classification O(O): 70~140, Y(Y): 120~240, MARKING GR(G): 200~400 ( )Marking Symbol Ss Type Name <- | bpp Rank sY<___ oS & 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-04-10 1/2TOSHIBA I VCE COMMON EMITTER Ta=25C -15 | m 1.0 0 -2 -4 -6 -8 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE VcR (V) hFE Ic COMMON EMITTER e Ta=100C VCha__6V DC CURRENT GAIN hrg - -0.1 -0.3 -1 -3 -10 -30 -100 COLLEECTOR CURRENT Ic (mA) VCE (sat) Ic | 2 COMMON EMITTER | o z S < Be E 5 I/Ip=10 4 e o4 aa EP Es Bo 25 o8 25 a5 a 0.01 2 01-03 -1 -3 -10 -80 -100 COLLEECTOR CURRENT Ic (mA) g VBE (sat) Ic < a COMMON EMITTER > Ig/Ig=10 > c/Ip oH Ta =25C 3 _ = Bo <a OR _o e s & -01 3 01-03 -1 -3 -10 30 100 wy s COLLEECTOR CURRENT Ig (mA) 2SA1162 fr I COMMON EMITTER VcoE=-10V Ta =25C e TRANSISTION FREQUENCY fp (MHz) - 1 -0.1 -0.3 -1 -3 -10 -30 -100 COLLEECTOR CURRENT Ic (mA) IB - VBE COMMON EMITTER Vor=6V BASE CURRENT Ip (A) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -12 BASE-EMITTER VOLTAGE VpE (V) Pc Ta (mW) _ COLLECTOR POWER DISSIPATION Pc 25 50 vis) 100 125 AMBIENT TEMPERATURE Ta (C) 961001 EAA2 @ The information contained herein is presented only as a guide for the a CORPORATION for any infringements of intellectual property or other rights by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. plications of our products. No responsibility is assumed by TOSHIBA the third parties which may result from its use. No license is granted 1997-04-10 2/2