LITE-ON SEMICONDUCTOR GBPC35005(W) thru 3510(W) REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 35 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS GBPC-W FEATURES Rating to 1000V PRV High efficiency Glass passivated chip junction Electrically isolated metal case for maximum heat dissipation The plastic material has UL flammability classification 94V-0 (Wire) B A E D N ~ F + D _ C GBPC/GBPC-W MAX. MIN. DIM. 31.80 A 8.00 B 7.40 28.30 28.80 C 17.60 18.60 D E ~ F UL Recognition File # E95060 D GBPC (Terminal) G H B I J K MECHANICAL DATA Case : Molded plastic with Heatsink internally mounted in the bridge encapsulation Polarity : As marked on Body Mounting : Hole for # 10 screw Weight : 0.63 ounces , 18.0 grams (terminal) : 0.51 ounces , 14.5 grams (wire) M L M L I N G K J + ~ _ N C 0.97 10.90 17.60 13.80 16.10 16.10 18.80 0.76 6.30 1.07 11.90 18.60 14.80 17.10 17.10 21.30 0.86 6.50 HOLE FOR NO. 10 SCREW 5.08 5.59 All Dimensions in millimeter ~ H MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC = Ta Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Maximum forward Voltage at 17.5A DC Maximum DC Reverse Current at Rated DC Blocking Voltage UNIT VRRM VRMS VDC GBPC GBPC GBPC GBPC GBPC GBPC GBPC 35005/W 3501/W 3502/W 3504/W 3506/W 3508/W 3510/W 200 400 600 800 1000 50 100 35 70 140 280 420 560 700 200 400 600 800 1000 50 100 I(AV) 35.0 A IFSM 400 A VF 1.1 V IR 5.0 500 uA SYMBOL CHARACTERISTICS @TJ =25 C @TJ =125 C 2 V V V I 2 t Rating for fusing (t < 8.3ms), (Note 1) I t 660 AS Typical Junction Capacitance per element (Note 2) CJ 150 pF R0JC 5.0 C/W TJ -55 to +150 C TSTG -55 to +150 C Typical Thermal Resistance (Note 3, see Fig.1) Operating Temperature Range Storage Temperature Range NOTES : 1.Measured at non-repetitive, for greater than 1ms and less than 8.3ms 2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3.Device mounted on 300mm x 300mm x 1.6mm Cu Plate Heatsink. 2 REV. 3, Apr-2007, KBDH03 RATING AND CHARACTERISTIC CURVES GBPC35005(W) thru GBPC3510(W) FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 450 400 8 350 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 10 300 6 250 200 4 150 2 100 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 50 0 20 40 60 80 100 120 Single Half-Sine-Wave 0 1 140 2 5 CASE TEMPERATURE , C 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.3 - TYPICAL JUNCTION CAPACITANCE 1000 INSTANTANEOUS FORWARD CURRENT ,(A) 100 100 10 Vsig=50mV p-p TJ = 25 C, f= 1MHz 1.0 10 1.0 0.1 TJ = 25 C PULSE WIDTH 300us 0.01 0.1 1.0 4.0 100 10.0 0 REVERSE VOLTAGE , VOLTS 0.2 0.4 0.6 FIG.5 - TYPICAL REVERSE CHARACTERISTICS 10 TJ = 125 C 1.0 50V-400V 600V-1000V 0.1 TJ = 25 C 0.01 0 20 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE , VOLTS 100 INSTANTANEOUS REVERSE CURRENT ,(uA) CAPACITANCE , (pF) 20 10 NUMBER OF CYCLES AT 60Hz 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 140 1.8