InGaAsP MQW DC-PBH
PULSED LASER DIODE MODULE
FOR 1550 nm OTDR APPLICATION NDL7560P
FEATURES
•HIGH OUTPUT POWER:
Pf = 30 mW at IFP = 400 mA, PW = 10 µs, Duty = 1%
•LONG WAVELENGTH:
λC = 1550 nm
•WIDE OPERATING TEMPERATURE RANGE:
TC = -20 to +65°C
•INTERNAL THERMOELECTRIC COOLER
•HERMETICALLY SEALED 14 PIN DIP PACKAGE
•SINGLE MODE FIBER PIGTAIL
The NDL7560P is a 1550 laser diode DIP module with single
mode fiber and internal thermoelectric cooler. It has a Multiple
Quantum Well (MQW) structure and is designed for light
source of optical measurement equipment (OTDR).
DESCRIPTION
PART NUMBER NDL7560P Series
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
VFP Forward Voltage, IFP = 400 mA, PW = 10 µs, V 2.5 4.0
Duty = 1%
PfOptical Output Power from Fiber, IFP = 400 mA, mW 20 30
PW = 10 µs, Duty = 1%
ITH Threshold Current mA 20 30
λcCenter Wavelength, IFP = 400 mA, PW = 10 µs, nm 1530 1550 1570
Duty = 1%, RMS (-20 dB)
σSpectral Width, IFP = 400 mA, PW = 10 µs, Duty = 1%, nm 10
RMS (-20 dB)
trRise Time, 10-90% ns 0.5 1.0
tfFall Time, 90-10% ns 0.7 1.0
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25°C, TC = -20°C to +65°C, unless otherwise specified)
PART NUMBER NDL7560P Series
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
R Thermistor Resistance, TLD = 25°C kΩ9.5 10.0 10.5
B B Constant K 3300 3400 3500
ICCooler Current, ∆T = 40 K A 0.6 1.0
VCCooler Voltage, ∆T = 40 K V 1.1 1.5
∆T1Cooling Capacity, IC = 1.0 A K 40
ELECTRO-OPTICAL CHARACTERISTICS
APPLICABLE TO THERMISTOR AND TEC (TLD = 25°C, TC = -20°C to +65°C, unless otherwise specified)
California Eastern Laboratories
Note:
1. ∆T = | TC - TLD |.