GENERAL DESCRIPTION
Darington transistor are designed for use as
general purpose amplifiers, switching and motor
control applications.
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V -600 V
VCEO Collector-emitter voltage (open base) -400 V
ICCollector current (DC) -40 A
ICM Collector current peak value -80 A
Ptot Total power dissipation Tmb 25 -250 W
VCEsat Collector-emitter saturation voltage IC = 2 0A; IB = 1.2A -6.0 V
Icsat Collector saturation current f = 16KHz - A
VFDio de for w ar d voltage IF = 20A 5 V
tfFall time IC=20A,IB1=1.2A,VCC=250V 1.0 s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM Collector-emitter voltage peak value VBE = 0V - 6 00 V
VCEO Collector-emitter voltage (open base) - 400 V
ICCollector current (DC) - 40 A
ICM Collector current peak value - 80 A
IBBase current (DC) - 20 A
IBM Base current peak value - 40 A
Ptot Total power dissipation Tmb 25 -250W
Tst
g
Storage temperature -55 150
T
j
Junction temperature - 150
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
ICE Collector cut-off current VBE = 0V; VCE = VCEmax -2.0mA
ICES VBE = 0V; VCE = VCEmax -5.0mA
Tj = 125
VCEOsust Collector-emitter sustaining voltage IB = 0A; IC = 100mA - V
L = 2 5m H
VCEsat Collector-emitter saturation voltages IC = 2 0A; IB = 1.2A - 6 V
VBEsat Base-emitter satuation voltage IC = 2 0A; IB = 1.2A - 3.5 V
hFE DC current gain IC = 1 0A; VCE = 5V 300
VFDio de for w ar d voltage IF = 20A 2.5 5.0 V
fTTransition frequency at f = 5MHz - MHz
CcCollector capacitance at f = 1MHz VCB = 10V 600 pF
tsSwitching times(16KHz line deflecton circuit) IC=20A,IB1=1.2A,VCC=250V 1.0 3.0 s
tfTur n- off st or age time Turn- off fall time IC=20A,IB1=1.2A,VCC=250V 0.3 1.0 s
ELECTRICAL CH ARACTERISTICS
TO-3
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
MJ10023
Silicon NPN Power Darlington Transistor
