10RIA80S90 - Vishay Presicion Group

Document Number: 93689 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 06-Jun-08 1

Medium Power Thyristors

(Stud Version), 10 A

10RIA Series

Vishay High Power Products

FEATURES

• Improved glass passivation for high reliability and

exceptional stability at high temperature

• High dI/dt and dV/dt capabilities

• Standard package

• Low thermal resistance

• Metric threads version available

• Types up to 1200 V VDRM/VRRM

• RoHS compliant

• Designed and qualified for industrial and consumer level

TYPICAL APPLICATIONS

• Medium power switching

• Phase control applications

• Can be supplied to meet stringent military, aerospace and

other high reliability requirements

PRODUCT SUMMARY

IT(AV) 10 A

TO-208AA (TO-48)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IT(AV)

10 A

TC85 °C

IT(RMS) 25 A

ITSM

50 Hz 225

60 Hz 240

I2t

50 Hz 255

A2s

60 Hz 233

VDRM/VRRM 100 to 1200 V

tqTypical 110 µs

TJ- 65 to 125 °C

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2Revision: 06-Jun-08

10RIA Series

Vishay High Power Products Medium Power Thyristors

(Stud Version), 10 A

ELECTRICAL SPECIFICATIONS

Notes

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs

(2) For voltage pulses with tp ≤ 5 ms

VOLTAGE RATINGS

TYPE

NUMBER

VOLTAGE

CODE

VDRM/VRRM, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE (1)

VRSM, MAXIMUM NON-REPETITIVE

PEAK VOLTAGE (2)

IDRM/IRRM MAXIMUM

AT TJ = TJ MAXIMUM

10RIA

10 100 150 20

20 200 300

40 400 500

60 600 700

80 800 900

100 1000 1100

120 1200 1300

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current

at case temperature IT(AV) 180° conduction, half sine wave 10 A

85 °C

Maximum RMS on-state current IT(RMS) 25 A

Maximum peak, one-cycle

non-repetitive surge current ITSM

t = 10 ms No voltage

reapplied

Sinusoidal

half wave,

initial TJ =

TJ maximum

225

t = 8.3 ms 240

t = 10 ms 100 % VRRM

reapplied

190

t = 8.3 ms 200

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

255

A2s

t = 8.3 ms 233

t = 10 ms 100 % VRRM

reapplied

180

t = 8.3 ms 165

Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2550 A2√s

Low level value of threshold voltage VT(TO)1

(16.7 % x π x IT(AV) < I < π x IT(AV)),

TJ = TJ maximum 1.10 V

High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.39

Low level value of

on-state slope resistance rt1

(16.7 % x π x IT(AV) < I < π x IT(AV)),

TJ = TJ maximum 24.3

mΩ

High level value of

on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 16.7

Maximum on-state voltage VTM Ipk = 32 A, TJ = 25 °C, tp = 10 ms sine pulse 1.75 V

Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 130 mA

Typical latching current IL200

Document Number: 93689 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 06-Jun-08 3

10RIA Series

Medium Power Thyristors

(Stud Version), 10 A Vishay High Power Products

Note

•t

q = 10 µs up to 600 V, tq = 30 µs up to 1600 V available on special request

Note

(1) Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 10RIA120S90

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum rate of rise

of turned-on current

VDRM ≤ 600 V

dI/dt

TJ = TJ maximum, VDM = Rated VDRM

Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum

ITM = (2 x rated dI/dt) A

200

A/µs

VDRM ≤ 800 V 180

VDRM ≤ 1000 V 160

VDRM ≤ 1600 V 150

Typical turn-on time tgt

TJ = 25 °C,

at rated VDRM/VRRM, TJ = 125 °C 0.9

µs

Typical reverse recovery time trr

TJ = TJ maximum,

ITM = IT(AV), tp > 200 µs, dI/dt = - 10 A/µs 4

Typical turn-off time tq

TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, VR = 100 V,

dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % VDRM,

gate bias 0 V to 100 W

110

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise

of off-state voltage dV/dt TJ = TJ maximum linear to 100 % rated VDRM 100 V/µs

TJ = TJ maximum linear to 67 % rated VDRM 300 (1)

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power PGM TJ = TJ maximum 8.0 W

Maximum average gate power PG(AV) 2.0

Maximum peak positive gate current IGM TJ = TJ maximum 1.5 A

Maximum peak negative gate voltage -VGM TJ = TJ maximum 10 V

DC gate current required to trigger IGT

TJ = - 65 °C Maximum required gate trigger

current/voltage are the lowest

value which will trigger all units

6 V anode to cathode applied

mATJ = 25 °C 60

TJ = 125 °C 35

DC gate voltage required to trigger VGT

TJ = - 65 °C 3.0

TJ = 25 °C 2.0

TJ = 125 °C 1.0

DC gate current not to trigger IGD TJ = TJ maximum, VDRM = Rated value 2.0 mA

DC gate voltage not to trigger VGD

TJ = TJ maximum,

VDRM = Rated value

Maximum gate current/voltage

not to trigger is the maximum

value which will not trigger any

unit with rated VDRM anode to

cathode applied

0.2 V

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4Revision: 06-Jun-08

10RIA Series

Vishay High Power Products Medium Power Thyristors

(Stud Version), 10 A

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction

and storage temperature range TJ, TStg - 65 to 125 °C

Maximum thermal resistance,

junction to case RthJC DC operation 1.85

K/W

Maximum thermal resistance,

case to heatsink RthCS Mounting surface, smooth, flat and greased 0.35

TO NUT TO DEVICE

Mounting torque Lubricated threads

(Non-lubricated threads)

20 (27.5) 25 lbf ⋅ in

0.23 (0.32) 0.29 kgf · m

2.3 (3.1) 2.8 N · m

Approximate weight 14 g

0.49 oz.

Case style See dimensions - link at the end of datasheet TO-208AA (TO-48)

ΔRthJC CONDUCTION

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.44 0.32

TJ = TJ maximum K/W

120° 0.53 0.56

90° 0.68 0.75

60° 1.01 1.05

30° 1.71 1.73

100

110

120

130

0 2 4 6 8 1012141618

30° 60°

90°

120°

180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Conduction Angle

10RIA Series

R (DC) = 1.85 K/W

thJC

100

110

120

130

0 5 10 15 20 25 30

30°

60°

90°

120°

180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Conduction Period

10RIA Series

R (DC) = 1.85 K/W

thJC

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Revision: 06-Jun-08 5

10RIA Series

Medium Power Thyristors

(Stud Version), 10 A Vishay High Power Products

Fig. 3 - On-State Power Loss Characteristics

Fig. 4 - On-State Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

0 255075100125

Maximum Allowable Ambient Temperature (°C)

10K/W

7K/W

5K/W

4K/W

3K/W

2K/W

R=1K/W-DeltaR

thS

024681012141618

RMS Limit

Conduction Angle

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

180°

120°

90°

60°

30°

10RIA Series

T = 125°C

0255075100125

Maximum Allowable Ambient Temperature (°C)

10K/W

7K/W

4K/W

3K/W

2K/W

R=1K

/W-DeltaR

0 5 10 15 20 25 30

180°

120°

90°

60°

30°

RMS Limit

Conduction Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

10RIA Series

T = 125°C

100

110

120

130

140

150

160

170

180

190

200

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

At Any Rated Load Condition And With

Rated V Applied Following Surge.

Peak Half Sine Wave On-state Current (A)

10RIA Series

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

RRM

100

120

140

160

180

200

220

240

0.01 0.1 1

Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

RRM

10RIA Series

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6Revision: 06-Jun-08

10RIA Series

Vishay High Power Products Medium Power Thyristors

(Stud Version), 10 A

Fig. 7 - Forward Voltage Drop Characteristics

Fig. 8 - Thermal Impedance ZthJC Characteristics

Fig. 9 - Gate Characteristics

100

1000

0.5 1 1.5 2 2.5 3 3.5 4

Instantaneous On-state Current (A)

Instantaneous On-state Voltage (V)

10RIA Series

T = 1 2 5 ° C

T = 2 5 ° C

0.1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedance Z (K/W)

Steady State Value

R = 1.85 K/W

(DC Operation)

thJC

10RIA Series

0.1

100

0.001 0.01 0.1 1 10 100

VGD

IGD

(b)

(a)

(1) (2)

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

a) Recommended load line for

b) Recommended load line for

Rectangular gate pulse

tr<=1 µs, tp >= 6 µs

rated di/dt : 10V, 20ohms

<=30% rated di/dt : 10V, 65ohms

(1) PGM = 16W, tp = 4ms

(2) PGM = 30W, tp = 2ms

(3) PGM = 60W, tp = 1ms

(4) PGM = 60W, tp = 1ms

tr <=0.5 µs, tp >= 6 µs

(3) (4)

Tj = -65 °C

Tj = 25 °C

Tj = 125 °C

10RIA Series Frequency Limited by PG(AV)

Document Number: 93689 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 06-Jun-08 7

10RIA Series

Medium Power Thyristors

(Stud Version), 10 A Vishay High Power Products

ORDERING INFORMATION TABLE

1- Current code

3- Voltage code x 10 = VRRM (see Voltage Ratings table)

4- None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A

M = Stud base TO-208AA (TO-48) M6 x 1

5- Critical dV/dt:

None = 300 V/µs (standard value)

S90 = 1000 V/µs (special selection)

2- Essential part number

Device code

51324

10 RIA 120 M S90

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95333

Document Number: 95333 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 07-Jul-08 1

TO-208AA (TO-48)

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

1/4"-28UNF-2A

For metric device M6 x 1

45°

Ø 3.9/4.1

(Ø 0.15/0.16)

Ø 15.5

(Ø 0.61)

Ø 1.7/1.8

(Ø 0.06/0.07)

12.8 MAX.

(0.5 MAX.)

22.2 MAX.

(0.87 MAX.)

30.2 MAX.

(0.18 MAX.)

3.1/3.3

(0.12/0.13)

1.24/1.44

(0.04/0.05)

10.7/11.5

(0.42/0.45)

Across flats

13.8/14.3

(0.54/0.56)

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Revision: 12-Mar-12 1Document Number: 91000

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