MPSW3725
Electrical Characteristics T A= 25°C unless otherwise noted
OFF CHARACTERISTICS
V(BR)CEO Collector-Emit ter Breakdown
Voltage* IC = 10 mA, IB = 0 40 V
V(BR)CES Collector-Emit ter Breakdown
Voltage IC = 10 µA, VBE = 0 60 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, ICE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
ICBO Collector Cutoff Current VCB = 50 V, I E = 0
VCB = 50 V, I E = 0, TA = 100°C100
10 nA
µA
ON CHARACTERISTICS*
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 50 mA , VCE = 10 V,
f = 100 MHz 250 MHz
Cobo Output Capacitance VCB = 10 V, I E = 0,
f = 1.0 MHz 25 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0,
f = 1.0 MHz 100 pF
SWITCHING CHARACTERISTICS
hFE DC Current Gain IC = 10 mA, VCE = 1. 0 V
IC = 100 mA, V CE = 1. 0 V
IC=100mA,VCE=1.0V,TA=-55°C
IC = 300 mA, V CE = 1. 0 V
IC = 500 mA, V CE = 1. 0 V
IC=500mA,VCE=1.0V,TA=-55°C
IC = 800 mA, V CE = 2. 0 V
IC = 1.0 A, VCE = 5.0 V
30
60
30
40
35
20
20
25
180
VCE(sat)Collector-Emitt er S aturation Voltage IC = 10 mA , IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, I B = 100 m A
0.25
0.26
0.4
0.52
0.8
0.95
V
V
V
V
V
V
VBE(sat)Base-Emitter Saturat i on V ol tage IC = 10 mA , IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, I B = 100 m A
0.76
0.86
1.1
1.2
1.5
1.7
V
V
V
V
V
V
NPN Transistor
(continued)
ton Turn-on Time VCC = 30 V, VBE = 3.8 V , 22 ns
tdDelay Tim e IC = 500 mA, I B1 = 50 mA 10 ns
trRise Ti me 12 ns
toff Turn-off Time VCC = 30 V, IC = 500m A 250 ns
tsStorage Tim e IB1 = IB2 = 50 mA 235 ns
tfFall Time 15 ns
Symbol Parame ter Test Conditions Min Typ Max Units