SILICON DUAL MATCHED
NPN TRANSISTORS
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
9986
Issue
1
Page 1 of
3
2N2920ADCSM
• Dual Silicon NPN Matched Transistors
• Hermetic Ceramic Surface Mount Package
• Designed For Low Noise, Differential Amplifier Applications.
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(Each Side, TA = 25°C unless otherwise stated)
Each Side Total Device
VCBO Collector – Base Voltage 60V
VCEO Collector – Emitter Voltage 60V
VEBO Emitter – Base Voltage 6V
IC Continuous Collector Current 30mA
PD Total Power Dissipation at TA = 25°C 300mW 500mW
(1)
Derate Above 25°C 1.71mW/°C
2.86mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJA Each Side - Thermal Resistance, Junction To Ambient 583.3 °C/W
RθJA
(1)
Total Device - Thermal Resistance, Junction To Ambient 350 °C/W
Notes
NotesNotes
Notes
(1) Total device power dissipation limited by package.
SILICON DUAL MATCHED
NPN TRANSISTORS
2N2920ADCSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
9986
Issue
1
Page 2 of
3
ELECTRICAL CHARACTERISTICS
(Each Side , TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max. Units
V(BR)CBO Collector-Base
Breakdown Voltage IC = 10µA IE = 0 60
V
V(BR)CEO
(2)
Collector-Emitter
Breakdown Voltage IC = 10mA IB = 0 60
V(BR)EBO Emitter-Base
Breakdown Voltage IE = 10µA IC = 0 6
ICEO Collector Cut-Off Current VCE = 5V 2 nA
ICBO Collector Cut-Off Current
VCB = 45V 2
TA = 150°C 10 µA
IEBO Emitter Cut-Off Current VEB = 5V 2 nA
hFE Forward-current transfer
ratio
IC = 10µA VCE = 5V 150 600
TA = -55°C 50
IC = 100µA VCE = 5V 225
IC = 1.0mA VCE = 5V 300
VCE(sat)
(2)
Collector-Emitter Saturation
Voltage IC = 1.0mA IB = 0.1mA 0.35
V
VBE(sat)
(2)
Base-Emitter Saturation
Voltage IC = 1.0mA IB = 0.1mA 0.5 1.0
ELECTRICAL MATCHING CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
2FE
h
1FE
h Forward-current transfer
ratio (gain ratio)
IC = 100
µ
A VCE = 5V 0.9 1.0
TA = -55°C 0.85 1.18
TA = 125°C 0.85 1.18
|VBE1-VBE2| Base-Emitter Voltage
Differential
IC = 10
µ
A VCE = 5V 2
mV
IC = 100
µ
A VCE = 5V 1.5
IC = 1.0mA VCE = 5V 2
|
∆
(VBE1-
VBE2)
∆
TA|
(3)
Base-Emitter Voltage
Differential Change Due To
Temperature
IC = 100
µ
A VCE = 5V
0.4
TA1 = -55°C TA2 = 25°C
IC = 100
µ
A VCE = 5V
0.5
TA1 = 25°C TA2 = 125°C
Notes
NotesNotes
Notes
(2) Pulse Width ≤ 300us, δ ≤ 2%
(3) By design only, not a production test
SILICON DUAL MATCHED
NPN TRANSISTORS
2N2920ADCSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
9986
Issue
1
Page 3 of
3
DYNAMIC CHARACTERISTICS
(Each Side , TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
fT Transition Frequency
IC = 500µA VCE = 5V
60 MHz
f = 20MHz
Cobo Output Capacitance
VCB = 5V IE = 0
6 pF
f = 1.0MHz
hoe
(
3
)
Output Admittance IC = 1.0mA
f = 1.0KHz VCE = 5V
40 µmhos
hie
(
3
)
Input Impedance 2 24 K
Ω
hre
(
3
)
Reverse Voltage Ratio 800 x10
-6
NF
(3)
Spot Noise Figure
VCE = 5V f=1.0KHz 3
IC = 10µA BW=200Hz dB
Wide-Band Noise Figure RG = 10KΩ f=10Hz to 15.7KHz 3
Notes
NotesNotes
Notes
(3) By design only, not a production test.
MECHANICAL DATA
Dimensions in mm (inches)
1
2
6
3
4
5
2.54 ± 0.13
(0.10 ± 0.005)
0.64 ± 0.06
(0.025 ± 0.003)
0.23
(0.009)
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
rad.
A
1.27 ± 0.13
(0.05 ± 0.005)
A =
6.22 ± 0.13
(0.245 ± 0.005)
4.32 ± 0.13
(0.170 ± 0.005)
LCC2 (MO
-
041BB)
Underside View
Pad 1 – Collector 1 Pad 4 – Collector 2
Pad 2 – Base 1 Pad 5 – Emitter 2
Pad 3 – Base 2 Pad 6 – Emitter 1
