DSA10I100PM
preliminary
Low Loss and Soft Recovery
High Performance Schottky Diode
Single Diode
Schottky Diode Gen ²
13
Part number
DSA10I100PM
Backside: isolated
FAV
F
VV0.71
RRM
10
100
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-220FP
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
● Isolation Voltage: V~
2500
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA10I100PM
preliminary
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.89
R4.5 K/
W
R
min.
10
V
RSM
V
200T = 25°C
VJ
T = °C
VJ
m
A
2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
140
P
tot
35
W
T = 25°C
C
RK/
W
10
100
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.04
T = 25°C
VJ
125
V
F0
V
0.45T = °C
VJ
175
r
F
16.1 m
Ω
V
0.71T = °C
VJ
I = A
F
V
10
0.87
I = A
F
20
I = A
F
20
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
100
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
96
j
unction capacitance V = V12 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
240
A
100
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
100
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA10I100PM
preliminary
Ratings
Logo
Part Number
DateCode
Assembly Code
Product Marking
Assembly Line
XXXXXX
YYWW Z
abcdef
D
S
A
10
I
100
PM
Part number
Diode
Schottky Diode
low VF
Single Diode
TO-220ACFP (2)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque 0.4
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
3.2 2.7
2.5 2.5
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 35 A
per terminal
150-55
terminal to terminal
TO-220FP
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSA10I100PM 503362Tube 50DSA10I100PMStandard
2080
2500
ISOL
T
stg
°C150
storage temperature -55
threshold voltage V0.45
mΩ
V
0 max
R
0 max
slope resistance * 12.9
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA10I100PM
preliminary
Note:
All metal surface are
matte pure tin plated
except trimmed area.
Ø P A
A1
H
A2
Q
L1
D
E
L
b
b1 c
e
13
d1
min max min max
A4.50 4.90 0.177 0.193
A1 2.34 2.74 0.092 0.108
A2 2.56 2.96 0.101 0.117
b0.70 0.90 0.028 0.035
b1 1.27 1.47 0.050 0.058
c0.45 0.60 0.018 0.024
D15.67 16.07 0.617 0.633
d1 0 1.10 00.043
E9.96 10.36 0.392 0.408
e
H6.48 6.88 0.255 0.271
L12.68 13.28 0.499 0.523
L1 3.03 3.43 0.119 0.135
ØP 3.08 3.28 0.121 0.129
Q3.20 3.40 0.126 0.134
Dim.
Millimeters Inches
2
.54 BS
C
0.100 BSC
13
Outlines TO-220FP
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
