4686226 I X Y 8 CORP DIX YS o3 pe ubabeeb oogoz1e 2 57 SG-/F? TECHNICAL DATA SHEET DATA SHEET NO. 1004A t August 1988 High Voltage Power MOSFET Die IRFC450 N-Channel Enhancement Mode High Ruggedness Series The following devi ' V(BR)DSS ......... 500V e following device types use the IRFC450: RDS(on) ..-. eee ee 0.49 2N6769 IXTH15N50A/IXTM15N50A 2N6770 IXTH1ISN45A/IXTM1SN45A IRF450/IRFP450 IXTH12N50ANXTM12N50A {RF451/IRFP451 IXTH12N50 = /IXTM12N50 I IRF452/IRFP452 IXTH12N45A/IXTM12N45A vowel le Topograp hy IRF453/IRFP453 ITXH12N45 AXTM12N45 1. Top Metal 3 um Aluminum 2. Back Metal Ni/V, with Au : 3. Die thickness 420+ 10 um FEATURES: APPLICATIONS: Fast switching times Switching power supplies 65mm * Low Rosin) HDMOS process Motor controls 4.4mm | l.. .l [ess4om Rugged polysilicon gate cell structure * Audio Amplifiers * Excellent high voltage stability Inverters 1 Low input capacitance * Choppers 65omm Improved high temperature reliability th son ELECTRICAL CHARACTERISTICS: (ta=25 c unless otherwise specified) CHARACTERISTIC TEST CONDITIONS SYMBOL | MIN TYP MAX | UNITS Drain-Source Breakdown Voltage Ves = 0V, Ip = 250 pA ViBRyDss 500 _ _ Vv Gate Threshold Voltage Vos = Vas, Ip = 250 pA Vasih) 2.0 _ 4.0 Vv Gate-Source Leakage Current Vas = +20 Voc less _ _ 100 nA Zero Gate Voltage Drain Current Vos =Veross x 0.8, Vas =O V To = 26C | Ipss 250 pA Te = 125C | Ipss _ _ 1000 | pA Static Drain-Source On-Resistance | Vas=10V, !p=6.0A Rps(on) _ 0.4 Q Ciss Input Capacitance Vas = OV, Vos = 25 V, f = 1.0 MHz Ciss _ 3000 pF Coss Output Capacitance Pulse Test: Pulse width <300ms, duty cycle <2% | Coss _ _ 450 pF Crss Reverse Transfer Capacitance Crss _ 150 pF NOTES: 1. Ip based on Rinic = 0.83 CAV 2. ASSEMBLY RECOMMENDATIONS: a) 10 mil Gate and 15 mil Source wires b) Drain mounted with 92.5/5/2.5% Lead/indium/Silver solder, or 95/5% Lead/tin solder 3. Devices shipped in ESD protected waffle packs with a maximum of 25 die per waffle pack. 4. Die should be handled and assembled in clean room environment. 5. Die should be stored in inert atmosphere (1 atmosphere Nz) IXYS Corporation reserves the right to change limits, test conditions, and dimensions without notice. TEL: (408) 435-1900 IXYS Corporation 2355 Zanker Rd., San Jose, CA 95131-1109 e TLX:; 384928 IXYS SNJ US FAX: (408) 435-0670