BCW65ALT1G, BCW65CLT1G General Purpose Transistor NPN Silicon www.onsemi.com Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 32 Vdc Collector - Base Voltage VCBO 60 Vdc Emitter - Base Voltage VEBO 5.0 Vdc IC 800 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1), TA = 25C Derate above 25C PD 225 mW 1.8 mW/C 556 C/W 2 EMITTER 3 1 Collector Current - Continuous 2 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA SOT-23 CASE 318 STYLE 6 MARKING DIAGRAMS Ex M G G PD 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Ex Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. = Device Code x = A or C M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BCW65ALT1G SOT-23 (Pb-Free) 3000/Tape & Reel BCW65CLT1G SOT-23 (Pb-Free) 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 1994 November, 2016 - Rev. 6 1 Publication Order Number: BCW65ALT1/D BCW65ALT1G, BCW65CLT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector -Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 32 - - Vdc Collector -Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0) V(BR)CES 60 - - Vdc Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 - - Vdc - - - - 20 20 nAdc mAdc - - 20 nAdc 35 75 100 35 - - - - - - 250 - 80 180 250 100 - - - - - - 630 - - - 0.7 0.3 - - - - 2.0 fT 100 - - MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo - - 12 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo - - 80 pF Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz) NF - - 10 dB Turn-On Time (IB1 = IB2 = 15 mAdc) ton - - 100 ns Turn-Off Time (IC = 150 mAdc, RL = 150 W) toff - - 400 ns Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 32 Vdc, IE = 0) (VCE = 32 Vdc, IE = 0, TA = 150C) ICES Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) BCW65ALT1 DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) BCW65CLT1 hFE - hFE Collector -Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) Base -Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) - Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Current -Gain -- Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BCW65ALT1G, BCW65CLT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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