© Semiconductor Components Industries, LLC, 1994
November, 2016 − Rev. 6 1Publication Order Number:
BCW65ALT1/D
BCW65ALT1G,
BCW65CLT1G
General Purpose Transistor
NPN Silicon
Features
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO 32 Vdc
Collector − Base Voltage VCBO 60 Vdc
Emitter − Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1), TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
Ex = Device Code
x = A or C
M = Date Code*
G= Pb−Free Package
MARKING DIAGRAMS
12
3
Device Package Shipping†
ORDERING INFORMATION
BCW65ALT1G SOT−23
(Pb−Free) 3000/Tape & Reel
†
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
Ex M G
G
COLLECTOR
3
1
BASE
2
EMITTER
BCW65CLT1G SOT−23
(Pb−Free) 3000/Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
www.onsemi.com
BCW65ALT1G, BCW65CLT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0) V(BR)CEO 32 − − Vdc
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, VEB = 0) V(BR)CES 60 − − Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150°C)
ICES −
−−
−20
20 nAdc
mAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0) IEBO − − 20 nAdc
ON CHARACTERISTICS
DC Current Gain BCW65ALT1
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE 35
75
100
35
−
−
−
−
−
−
250
−
−
DC Current Gain BCW65CLT1
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE 80
180
250
100
−
−
−
−
−
−
630
−
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat) −
−0.7
0.3 −
−
Vdc
Base−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc) VBE(sat) − − 2.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − − 12 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − − 80 pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB
SWITCHING CHARACTERISTICS
T urn−On Time
(IB1 = IB2 = 15 mAdc) ton − − 100 ns
T urn−Off Time
(IC = 150 mAdc, RL = 150 W)toff − − 400 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BCW65ALT1G, BCW65CLT1G
www.onsemi.com
3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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BCW65ALT1/D
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