CREAT BY ART
◇ Wide zener voltage range selection : 2.4V to 75V
◇ V
Z
tolerance selection of ±5%
◇ Moisture sensitivity level 1
◇ Matte Tin(Sn) lead finish with Nickel(Ni) underplate
◇ Pb free version and RoHS compliant
◇ All external surfaces are corrosion resistant and
leads are readily solderable
◇ Case : QUADRO Mini-MELF Package (JEDEC DO-213)
◇ High temperature soldering guaranteed : 270
o
C/10s
◇ Polarity : Indicated by cathode band
◇ Weight : 29 ± 2.5mg
Maxi mum Ratings and Electrical Characteristics
Ratin
g
at 25
o
C ambient tem
p
erature unless otherwise s
p
ecified.
Maximum Ratin
g
s
Unit
mW
V
o
C/W
o
C
Zener I vs. V Characteristics
V
BR
I
ZK
: Test current for voltage V
BR
Z
ZK
: Dynamic impedance at I
ZK
I
ZT
: Test current for voltage V
Z
V
Z
Z
ZT
: Dynamic impedance at I
ZT
I
ZM
: Maximum steady state current
V
ZM
Document Number：DS_S1308005
BZT55C2V4 - BZT55C75
Small Signal Product
500mW, 5% Tolerance SMD Zener Diode
R
θJA
Forward Voltage
Thermal Resistance (Junction to Ambient)
Mechanical Data
P
D
Note : Valid provided that electrodes are kept at ambient temperature.
Version : E13
: Voltage at current I
ZT
: Voltage at I
ZM
: Voltage at I
ZK
-65 to +175
Value
500
1.0
500
Features
V
F
Hermetically Sealed Glass
QUADRO Mini -MELF (LS34)
Symbol
T
J
, T
STG
Parameter
Power Dissipation
I
F
=10mA
(Note 1)
Junction and Storage Temperature Range
Electrical Characteristics ( T
A
= 25
o
C unless otherwise noted )
V
F
Forward Voltage = 1.0V Maximum @ I
F
= 10 mA for all part numbers
Nom Min Max
BZT55C2V4 2.4 2.28 2.56 5 85 1 600 50 1
BZT55C2V7 2.7 2.51 2.89 5 85 1 600 10 1
BZT55C3V0 3.0 2.8 3.2 5 85 1 600 4 1
BZT55C3V3 3.3 3.1 3.5 5 85 1 600 2 1
BZT55C3V6 3.6 3.4 3.8 5 85 1 600 2 1
BZT55C3V9 3.9 3.7 4.1 5 85 1 600 2 1
BZT55C4V3 4.3 4.0 4.6 5 75 1 600 1 1
BZT55C4V7 4.7 4.4 5.0 5 60 1 600 0.5 1
BZT55C5V1 5.1 4.8 5.4 5 35 1 550 0.1 1
BZT55C5V6 5.6 5.2 6.0 5 25 1 450 0.1 1
BZT55C6V2 6.2 5.8 6.6 5 10 1 200 0.1 2
BZT55C6V8 6.8 6.4 7.2 5 8 1 150 0.1 3
BZT55C7V5 7.5 7.0 7.9 5 7 1 50 0.1 5
BZT55C8V2 8.2 7.7 8.7 5 7 1 50 0.1 6.2
BZT55C9V1 9.1 8.5 9.6 5 10 1 50 0.1 6.8
BZT55C10 10 9.4 10.6 5 15 1 70 0.1 7.5
BZT55C11 11 10.4 11.6 5 20 1 70 0.1 8.2
BZT55C12 12 11.4 12.7 5 20 1 90 0.1 9.1
BZT55C13 13 12.4 14.1 5 26 1 110 0.1 10
BZT55C15 15 13.8 15.6 5 30 1 110 0.1 11
BZT55C16 16 15.3 17.1 5 40 1 170 0.1 12
BZT55C18 18 16.8 19.1 5 50 1 170 0.1 13
BZT55C20 20 18.8 21.1 5 55 1 220 0.1 15
BZT55C22 22 20.8 23.3 5 55 1 220 0.1 16
BZT55C24 24 22.8 25.6 5 80 1 220 0.1 18
BZT55C27 27 25.1 28.9 5 80 1 220 0.1 20
BZT55C30 30 28 32 5 80 1 220 0.1 22
BZT55C33 33 31 35 5 80 1 220 0.1 24
BZT55C36 36 34 38 5 80 1 220 0.1 27
BZT55C39 39 37 41 2.5 90 0.5 500 0.1 28
BZT55C43 43 40 46 2.5 90 0.5 600 0.1 32
BZT55C47 47 44 50 2.5 110 0.5 700 0.1 35
BZT55C51 51 48 54 2.5 125 0.5 700 0.1 38
BZT55C56 56 52 60 2.5 135 0.5 1,000 0.1 42
BZT55C62 62 58 66 2.5 150 0.5 1,000 0.1 47
BZT55C68 68 64 72 2.5 160 0.5 1,000 0.1 51
BZT55C75 75 70 79 2.5 170 0.5 1,000 0.1 56
Notes： 1. The Zener Voltage (V
Z
) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±5%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an
RMS value equal to 10% of the dc zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
Document Number：DS_S1308005
Small Signal
Part Number V
Z
@ I
ZT
(Volt) I
ZT
(mA)
V
R
(V)
Version : E13
Z
ZT
@ I
ZT
(Ω)
Max
I
ZK
(mA)
Z
ZK
@ I
ZK
(Ω)
Max
I
R
@ V
R
(μA)
Max
Document Number：DS_S1308005
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
Version : E13
0
50
100
150
200
250
300
0123456789101112
Zener Current (mA)
Zener Voltage (V)
Fig. 2 Zener Breakdown Characteristics
TA=25oC
0.01
0.1
1
10
100
15 25 35 45 55 65 75 85
Zener Current (mA)
Zener Voltage (V)
Fig. 3 Zener Breakdown Characteristics
1
10
100
1000
1 10 100
Capacitance (pF)
Zener Voltage (V)
Fig. 5 Typical Capacitance
0
100
200
300
400
500
600
0 50 100 150 200
Power Dissipation (mW)
Ambient Temperature (oC)
Fig. 4 Admissible Power Dissipation Curve
1
10
100
1000
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Forward Current (mA)
Forward Voltage (V)
Fig. 1 Typical Forward Characteristics
TA=25oC
1
10
100
1000
1 10 100
Dynamic Impedence(Ohm)
Zener Voltage (V)
Fig. 6 Effect of Zener Voltage on Impedence
IZ=5mA IZ=20mA
Bias at 50% of VZ (Nom)
1V Bias
IZ=1mA
Ordering information (Example)
L0
L1
BZT55C2V4 QMMELF L0
BZT55C2V4 QMMELF L0
BZT55C2V4 QMMELF L0
Tape & Reel specification
Item Symbol
Carrier width A
Carrier length B
Carrier depth C
Sprocket hole d
Reel outside diameter D 178 ± 1 330 ± 1
Reel inner diameter D1 55 Min 100 Min
Feed hole width D2
Sprocket hole position E
Punch hole position F
Sprocket hole pitch P0
Embossment center P1
Overall tape thickness T
Tape width W
Reel width W1
Document Number：DS_S1308005
Small Signal Product
Part No. Package Packing Packing code Packing code
(Green) Manufacture code
BZT55CXX
(Note 1) QMMELF 10K / 13" Reel L0G (Note 2)
2.5K / 7" Reel L1G
10K / 13" Reel L0G
10K / 13" Reel L0G L0
10K / 13" Reel L0G B0
Note 1 : "xx" is Device Code from "2V4" thru "75".
Note 2 : Manufacture special control, if empty means no special control requirement.
Dimension
1.83 ±0.10
3.73 ±0.10
1.80 ±0.10
1.50 ± 0.10
13.0 ± 0.20
1.75 ±0.10
Version : E13
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.23 ±0.005
8.00 ±0.30
14.4 Max
Min Max Min Max
A 3.30 3.70 0.130 0.146
B 1.40 1.60 0.055 0.063
C 0.20 0.45 0.008 0.018
D
A
B
C
D
Document Number：DS_S1308005
Small Signal Product
Dimensions
DIM. Unit(mm) Unit(inch)
Suggested PAD Layout
1.8 TYP. 0.071 TYP.
DIM. Unit(mm) Unit(inch)
Typ. Typ.
1.25 0.049
Version : E13
2.00 0.079
2.50 0.098
5.00 0.197
C
B
A
D
