BZT55C2V4 - BZT55C75 CREAT BY ART 500mW, 5% Tolerance SMD Zener Diode Small Signal Product Features QUADRO Mini-MELF (LS34) Wide zener voltage range selection : 2.4V to 75V Hermetically Sealed Glass VZ tolerance selection of 5% Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant All external surfaces are corrosion resistant and leads are readily solderable Mechanical Data Case : QUADRO Mini-MELF Package (JEDEC DO-213) High temperature soldering guaranteed : 270oC/10s Polarity : Indicated by cathode band Weight : 29 2.5mg Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Maximum Ratings Parameter Symbol Value Unit PD 500 mW IF=10mA VF 1.0 (Note 1) RJA 500 TJ , TSTG -65 to +175 Power Dissipation Forward Voltage Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range V o C/W o C Note : Valid provided that electrodes are kept at ambient temperature. Zener I vs. V Characteristics VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current IZT ZZT : Dynamic impedance at IZT IZM : Maximum steady state current : Voltage at IZM VZM Document NumberDS_S1308005 Version : E13 Small Signal Electrical Characteristics ( TA= 25oC unless otherwise noted ) VF Forward Voltage = 1.0V Maximum @ IF = 10 mA for all part numbers VZ @ IZT (Volt) Nom Min Max IZT (mA) BZT55C2V4 2.4 2.28 2.56 5 85 1 600 50 1 BZT55C2V7 2.7 2.51 2.89 5 85 1 600 10 1 BZT55C3V0 3.0 2.8 3.2 5 85 1 600 4 1 BZT55C3V3 3.3 3.1 3.5 5 85 1 600 2 1 BZT55C3V6 3.6 3.4 3.8 5 85 1 600 2 1 BZT55C3V9 3.9 3.7 4.1 5 85 1 600 2 1 BZT55C4V3 4.3 4.0 4.6 5 75 1 600 1 1 BZT55C4V7 4.7 4.4 5.0 5 60 1 600 0.5 1 BZT55C5V1 5.1 4.8 5.4 5 35 1 550 0.1 1 BZT55C5V6 5.6 5.2 6.0 5 25 1 450 0.1 1 BZT55C6V2 6.2 5.8 6.6 5 10 1 200 0.1 2 BZT55C6V8 6.8 6.4 7.2 5 8 1 150 0.1 3 BZT55C7V5 7.5 7.0 7.9 5 7 1 50 0.1 5 BZT55C8V2 8.2 7.7 8.7 5 7 1 50 0.1 6.2 BZT55C9V1 9.1 8.5 9.6 5 10 1 50 0.1 6.8 BZT55C10 10 9.4 10.6 5 15 1 70 0.1 7.5 BZT55C11 11 10.4 11.6 5 20 1 70 0.1 8.2 BZT55C12 12 11.4 12.7 5 20 1 90 0.1 9.1 BZT55C13 13 12.4 14.1 5 26 1 110 0.1 10 BZT55C15 15 13.8 15.6 5 30 1 110 0.1 11 BZT55C16 16 15.3 17.1 5 40 1 170 0.1 12 BZT55C18 18 16.8 19.1 5 50 1 170 0.1 13 BZT55C20 20 18.8 21.1 5 55 1 220 0.1 15 BZT55C22 22 20.8 23.3 5 55 1 220 0.1 16 BZT55C24 24 22.8 25.6 5 80 1 220 0.1 18 BZT55C27 27 25.1 28.9 5 80 1 220 0.1 20 BZT55C30 30 28 32 5 80 1 220 0.1 22 BZT55C33 33 31 35 5 80 1 220 0.1 24 BZT55C36 36 34 38 5 80 1 220 0.1 27 BZT55C39 39 37 41 2.5 90 0.5 500 0.1 28 BZT55C43 43 40 46 2.5 90 0.5 600 0.1 32 BZT55C47 47 44 50 2.5 110 0.5 700 0.1 35 BZT55C51 51 48 54 2.5 125 0.5 700 0.1 38 BZT55C56 56 52 60 2.5 135 0.5 1,000 0.1 42 BZT55C62 62 58 66 2.5 150 0.5 1,000 0.1 47 BZT55C68 68 64 72 2.5 160 0.5 1,000 0.1 51 BZT55C75 75 70 79 2.5 170 0.5 1,000 0.1 56 Part Number ZZT @ IZT () Max IZK (mA) ZZK @ IZK () Max IR @ VR(A) Max VR (V) Notes 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nomial zener voltage of 5%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current(IZT or IZK) is superimposed to IZT or IZK. Document NumberDS_S1308005 Version : E13 Small Signal Product RATINGS AND CHARACTERISTICS CURVES Fig. 2 Zener Breakdown Characteristics Fig. 1 Typical Forward Characteristics 300 1000 Zener Current (mA) Forward Current (mA) TA=25oC 250 TA=25oC 100 10 200 150 100 50 0 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 1 2 3 4 Forward Voltage (V) 6 7 8 9 10 11 12 Fig. 4 Admissible Power Dissipation Curve Fig. 3 Zener Breakdown Characteristics 600 Power Dissipation (mW) 100 10 Zener Current (mA) 5 Zener Voltage (V) 1 0.1 500 400 300 200 100 0 0.01 15 25 35 45 55 65 75 0 85 50 100 150 200 Ambient Temperature (oC) Zener Voltage (V) Fig. 5 Typical Capacitance Fig. 6 Effect of Zener Voltage on Impedence 1000 1000 Dynamic Impedence(Ohm) Capacitance (pF) IZ=1mA 1V Bias 100 10 Bias at 50% of VZ (Nom) 100 10 IZ=5mA IZ=20mA 1 1 1 10 Zener Voltage (V) Document NumberDS_S1308005 100 1 10 100 Zener Voltage (V) Version : E13 Small Signal Product Ordering information (Example) Packing Packing code Packing code (Green) 10K / 13" Reel L0 L0G 2.5K / 7" Reel L1 L1G QMMELF 10K / 13" Reel L0 L0G BZT55C2V4 QMMELF 10K / 13" Reel L0 L0G L0 BZT55C2V4 QMMELF 10K / 13" Reel L0 L0G B0 Part No. Package BZT55CXX (Note 1) QMMELF BZT55C2V4 Manufacture code (Note 2) Note 1 : "xx" is Device Code from "2V4" thru "75". Note 2 : Manufacture special control, if empty means no special control requirement. Tape & Reel specification Symbol Dimension Carrier width A 1.83 0.10 Carrier length B 3.73 0.10 Carrier depth C 1.80 0.10 Sprocket hole d 1.50 0.10 Reel outside diameter D 178 1 330 1 Reel inner diameter D1 55 Min 100 Min Item D2 13.0 0.20 Sprocket hole position E 1.75 0.10 Punch hole position F 3.50 0.05 Sprocket hole pitch P0 4.00 0.10 Embossment center P1 2.00 0.05 Overall tape thickness T 0.23 0.005 Tape width W 8.00 0.30 Reel width W1 14.4 Max Feed hole width Document NumberDS_S1308005 Version : E13 Small Signal Product Dimensions C DIM. B D A Unit(mm) Unit(inch) Min Max Min Max A 3.30 3.70 0.130 0.146 B 1.40 1.60 0.055 0.063 C 0.20 0.45 0.008 0.018 1.8 TYP. 0.071 TYP. Unit(mm) Unit(inch) Typ. Typ. A 1.25 0.049 B 2.00 0.079 C 2.50 0.098 D 5.00 0.197 D Suggested PAD Layout DIM. Document NumberDS_S1308005 Version : E13