TGA4516 Ka Band 2W Power Amplifier Key Features * * * * 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq (1.9A under RF Drive) 0.15 um 3MI pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in * * Primary Applications * * * Military Radar Systems Ka-Band Sat-Com Point to Point Radio Product Description The TGA4516 provides >33 dBm saturated output power, and has typical gain of 18 dB at a bias of 6V and 1050mA (Idq). The current rises to 1.9A under RF drive. 25 20 S21 15 10 S-Parameters (dB) The TriQuint TGA4516 is a High Power MMIC Amplifier for Ka-band applications. The part is designed using TriQuint's 0.15um power pHEMT process. The small chip size is achieved by utilizing TriQuint's 3 metal layer interconnect (3MI) design technology that allows compaction of the design over competing products. Fixtured Data VD = 6V, ID = 1050mA 5 0 -5 S22 -10 S11 -15 -20 -25 30 This HPA is ideally suited for many applications such as Military Radar Systems, Ka-band Sat-Com, and Point-to-Point Radios. 34 36 38 40 Frequency (GHz) Pout @ Pin =20dBm 35 The TGA4516 is 100% DC and RF tested on-wafer to ensure performance compliance. 34 Pout (dBm) Lead-Free & RoHS compliant. 32 33 32 31 30 30 32 34 36 38 40 Frequency (GHz) Datasheet subject to change without notice 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2011 (c) Rev A TGA4516 TABLE I MAXIMUM RATINGS 1/ SYMBOL Positive Supply Voltage - Negative Supply Voltage Range V V I PARAMETER + + IG Positive Supply Current Gate Supply Current VALUE NOTES 6.5 V 2/ -5 TO 0 V 3A 2/ 3/ 85 mA 3/ PIN Input Continuous Wave Power 267 mW PD Power Dissipation 12.7 W 2/ 4/ TCH Operating Channel Temperature 200 C 5/ 6/ Mounting Temperature (30 Seconds) 320 C TSTG Storage Temperature -65 to 150 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ When operated at this bias condition with a base plate temperature of 70 C, the median life is 7.3E3 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2011 (c) Rev A TGA4516 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 OC, Nominal) PARAMETER TYPICAL UNITS 6 V Quiescent Current 1050 mA Frequency Range 30 - 40 GHz Small Signal Gain, S21 18 dB Input Return Loss, S11 10 dB Output Return Loss, S22 7 dB Power @ saturated, Psat 33 dBm Drain Operating 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2011 (c) Rev A TGA4516 TABLE III THERMAL INFORMATION Parameter JC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 6 V Id = 1700 mA Freq = 35 GHz Pdiss = 7.8 W JC Tm ( C) ( C/W) (HRS) 150 10.2 1E+6 Tch o o Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 10.6 W with 2.3 W RF power delivered to load. Power dissipated is 8.2 W and the temperature rise in the channel is 84 C. Median Lifetime (Tm) vs. Channel Temperature 1.E+13 Median Lifetime (Hours) 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 FET5 25 50 75 100 125 150 175 200 Channel Temperature ( C) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2011 (c) Rev A TGA4516 Fixtured Performance Vds=6V, Idq=1050mA 25 20 S21 15 S-Parameters (dB) 10 5 0 -5 S22 -10 -15 S11 -20 -25 -30 -35 -40 28 30 32 34 36 38 40 42 Frequency (GHz) TGA4516 Pout @ Pin =20dBm Vds=6V, Idq=1050mA 35 Pin=20dBm 34 33 Pout (dBm) 32 31 30 29 28 27 26 25 28 30 32 34 36 38 40 42 Fre que ncy (GHz) 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2011 (c) Rev A TGA4516 Fixtured Performance TGA4516 Pout vs. Pin freq=35GHz, Vds=6V, Idq=1050mA 40 30 Pout Large Signal Gain 25 30 20 25 15 20 10 15 5 10 Gain (dB) Pout (dBm) 35 0 -10 -5 0 5 10 15 20 25 Pin (dBm) TGA4516 Ids vs. Pin freq=35GHz, Vds=6V, Idq=1050mA 40 2200 Pout 2000 30 1800 25 1600 20 1400 15 1200 IDS (mA) Pout (dBm) Ids 35 1000 10 -10 -5 0 5 10 15 20 25 Pin (dBm) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2011 (c) Rev A TGA4516 Mechanical Drawing Units: Millimeters [inches] Thickness: 0.100 [0.004] (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chipsize: 2.79 x 2.315 [0.110 x 0.091] +/- 0.51 [0.002] RF Ground is backside of MMIC Bond pad #1 Bond pad #2 Bond pad #3 Bond pad #4 Bond pad #5 Bond pad #6 Bond pad #7 Bond pad #8 Bond pad #9 Bond pad #10 (RF Input) (Vg2) (Vd12) (Vg3) (Vd3) (RF Output) (Vd3) (Vg3) (Vd12) (Vg2) 0.100 x 0.200 0.100 x 0.100 0.100 x 0.200 0.100 x 0.100 0.100 x 0.100 0.100 x 0.200 0.100 x 0.200 0.100 x 0.100 0.100 x 0.200 0.100 x 0.100 [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.004] [0.004 x 0.008] [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.008] [0.004 x 0.004] GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2011 (c) Rev A TGA4516 Chip Assembly Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2011 (c) Rev A TGA4516 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com July 2011 (c) Rev A