TGA4516
Key Features
• 30 - 40 GHz Bandwidth
• > 33 dBm Nominal Psat @ Pin = 20dBm
• 18 dB Nominal Gain
• Bias: 6 V, 1050 mA Idq (1.9A under RF
Drive)
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions: 2.79 x 2.315 x 0.1 mm
(0.110 x 0.091 x 0.004) in
Primary Applications
• Military Radar Systems
• Ka-Band Sat-Com
• Point to Point Radio
Fixtured Data
VD= 6V, ID= 1050mA
25
Product Description
The TriQuint TGA4516 is a High Power MMIC
Amplifier for Ka
-
band applications. The part is
Ka Band 2W Power Amplifier
1
-25
-20
-15
-10
-5
0
5
10
15
20
30 32 34 36 38 40
Frequency (GHz)
S-Parameters (d B)
S21
S22
S11
Pout @ Pin =20dBm
30
31
32
33
34
35
30 32 34 36 38 40
Frequency (GHz)
Pout (dBm)
Amplifier for Ka
-
band applications. The part is
designed using TriQuint’s 0.15um power pHEMT
process. The small chip size is achieved by utilizing
TriQuint’s 3 metal layer interconnect (3MI) design
technology that allows compaction of the design over
competing products.
The TGA4516 provides >33 dBm saturated output
power, and has typical gain of 18 dB at a bias of 6V
and 1050mA (Idq). The current rises to 1.9A under RF
drive.
This HPA is ideally suited for many applications such
as Military Radar Systems, Ka-band Sat-Com, and
Point-to-Point Radios.
The TGA4516 is 100% DC and RF tested on-wafer to
ensure performance compliance.
Lead-Free & RoHS compliant.
Datasheet subject to change without notice
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2011 © Rev A
TGA4516
SYMBOL
PARAMETER VALUE NOTES
V
+
Positive Supply Voltage 6.5 V 2/
V
-
Negative Supply Voltage Range -5 TO 0 V
I
+
Positive Supply Current 3 A 2/ 3/
I
G
Gate Supply Current 85 mA 3/
P
IN
Input Continuous Wave Power 267 mW
P
D
Power Dissipation 12.7 W 2/ 4/
T
CH
Operating Channel Temperature 200 °C 5/ 6/
Mounting Temperature (30 Seconds) 320 °C
T
STG
Storage Temperature -65 to 150 °C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of 70 °C, the median life
is 7.3E3
TABLE I
MAXIMUM RATINGS 1/
2
is 7.3E3
5/ Junction operating temperature will directly affect the device median time to failure (Tm).
For maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
6/ These ratings apply to each individual FET.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2011 © Rev A
TGA4516
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 OC, Nominal)
PARAMETER TYPICAL UNITS
Drain Operating 6 V
Quiescent Current 1050 mA
Frequency Range 30 - 40 GHz
Small Signal Gain, S21 18 dB
Input Return Loss, S11 10 dB
Output Return Loss, S22 7 dB
Power @ saturated, Psat 33 dBm
3
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2011 © Rev A
TGA4516
Parameter Test Conditions T
ch
(
o
C)
θ
θθ
θ
JC
(
o
C/W)
Tm
(HRS)
θ
θθ
θ
JC
Thermal Resistance
(channel to backside of carrier)
Vd = 6 V
Id = 1700 mA
Freq = 35 GHz
Pdiss = 7.8 W
150 10.2 1E+6
TABLE III
THERMAL INFORMATION
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at
70°C baseplate temperature. Worst case is at saturated output power when DC power
consumption rises to 10.6 W with 2.3 W RF power delivered to load. Power dissipated is 8.2 W
and the temperature rise in the channel is 84 °C.
1.E+12
1.E+13
Median Lifetime (Tm) vs. Channel Temperature
4
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
25 50 75 100 125 150 175 200
Channel Temperature ( C)
Median Lifetime (Hours)
FET5
°
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2011 © Rev A
TGA4516
Fixtured Performance
Vds=6V, Idq=1050mA
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
28 30 32 34 36 38 40 42
Frequency (GHz)
S-Parameters (dB)
S11
S22
S21
5
TGA4516 Pout @ Pin =20dBm
Vds=6V, Idq=1050mA
25
26
27
28
29
30
31
32
33
34
35
28 30 32 34 36 38 40 42
Fre que ncy (GHz)
Pout (dBm)
Pin=20dBm
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2011 © Rev A
TGA4516
Fixtured Performance
TGA4516 Pout vs. Pin
freq=35GHz, Vds=6V, Idq=1050mA
10
15
20
25
30
35
40
-10 -5 0 5 10 15 20 25
Pin (dBm)
Pout (dBm)
0
5
10
15
20
25
30
Gain (dB)
Pout
Large Signal Gain
6
Pin (dBm)
TGA4516 Ids vs. Pin
freq=35GHz, Vds=6V, Idq=1050mA
10
15
20
25
30
35
40
-10 -5 0 5 10 15 20 25
Pin (dBm)
Pout (dBm)
1000
1200
1400
1600
1800
2000
2200
IDS (mA)
Pout
Ids
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2011 © Rev A
TGA4516
Mechanical Drawing
7
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2011 © Rev A
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Units: Millimeters [inches]
Thickness: 0.100 [0.004] (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad
Chipsize: 2.79 x 2.315 [0.110 x 0.091] +/- 0.51 [0.002]
RF Ground is backside of MMIC
Bond pad #1 (RF Input) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #2 (Vg2) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #3 (Vd12) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #4 (Vg3) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #5 (Vd3) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #6 (RF Output) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #7 (Vd3) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #8 (Vg3) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #9 (Vd12) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #10 (Vg2) 0.100 x 0.100 [0.004 x 0.004]
TGA4516
Chip Assembly Diagram
8
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2011 © Rev A
TGA4516
Assembly Process Notes
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C (30 seconds max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
•
9
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
•
Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 200°C.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
July 2011 © Rev A