MMBF170-7-F - Diodes - Datasheet.Directory

MMBF170

Document number: DS30104 Rev. 11 - 2 1 of 5

www.diodes.com March 2012

MMBF170

N-CHANNEL ENHAN CEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

Ordering Information (Note 3)

Part Number Case Packaging

MMBF170-7-F SOT23 3000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017

Code J K L M N P R … Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT23

Top View Equivalent Circuit To

View

Source

Gate

Drain

K = SAT (Shanghai Assembly / Test site)

C = CAT (Chengdu Assembly / Test site)

6Z = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: N = 2002)

M = Month (ex: 9 = September)

K6Z

C6Z

MMBF170

Document number: DS30104 Rev. 11 - 2 2 of 5

www.diodes.com March 2012

MMBF170

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 60 V

Drain-Gate Voltage RGS ≤ 1.0MΩ V

DGR 60 V

Gate-Source Voltage Continuous

Pulsed VGSS

±40 V

Drain Current (Note 4) Continuous

Pulsed ID 500

800 mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 4) PD 300

1.80 mW

mW/°C

Thermal Resistance, Junction to Ambient R

JA 417 K/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 100μA

Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA

VDS = 60V, VGS = 0V

Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±15V, VDS = 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage VGS

(

)

0.8 2.1 3.0 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS (ON) ⎯

⎯ ⎯

⎯ 5.0

5.3 Ω VGS = 10V, ID = 200mA

VGS = 4.5V, ID = 50mA

Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss ⎯ 22 40 pF

VDS = 10V, VGS = 0V, f = 1.0MHz

Output Capacitance Coss ⎯ 11 30 pF

Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF

SWITCHING CHARACTERISTICS

Turn-On Time ton ⎯ ⎯ 10 ns

VDD = 25V, ID = 0.5A,

VGS = 10V, RGEN = 50Ω Turn-Off Time toff ⎯ ⎯ 10 ns

Notes: 4. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our

website at http://www.diodes.com.

5. Short duration pulse test used to minimize self-heating effect.

MMBF170

Document number: DS30104 Rev. 11 - 2 3 of 5

www.diodes.com March 2012

MMBF170

0.2

0.4

0.6

0.8

1.0

012345

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

I , DRAIN-SOURCE CURRENT (A)

00.2

MALIZED

DRAIN-SOURCE ON-RESISTANCE

DS(ON)

I , DRAIN CURRENT (A)

Fig . 2 On - R esistance vs. Drai n C urre nt

0.4 0.6 0.8 1.0

0.5

1.0

1.5

2.0

-55 -30 -5 20 45 70 95 120 145

MALIZED

DRAIN-SOURCE ON-RESISTANCE

DS(ON)

T, JUNCTION TEMPERATURE ( C)

Fig . 3 On - R esi stance vs. Junctio n Tem pera tu r e

V , GATE TO SOURCE VOLTAGE (V)

Fig. 4 On-Resistance vs. Gate-Source Voltage

024681012141618

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

DS(ON)

100

25 50 75 100 125 150 175 200

DISSI

N (mW)

T , AMBIENT TEMPERA TURE (°C)

Fi g. 5 Max Pow er Di ss i pa t i on vs . Ambient Te m pe r at ur e

150

200

250

300

350

400

MMBF170

Document number: DS30104 Rev. 11 - 2 4 of 5

www.diodes.com March 2012

MMBF170

Package Outline Dimensions

Suggested Pad Layout

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

MMBF170

Document number: DS30104 Rev. 11 - 2 5 of 5

www.diodes.com March 2012

MMBF170

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