PHC21025,118 - NEXPERIA - Datasheet.Directory

1. Product profile

1.1 General description

Intermediate level N-channel and P-channel complementa ry pair enhancement mode

Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This

product is designed and qualified for use in computing , communications, consumer and

industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Suitable for high frequency

applicat ion s du e to fast swit ch ing

characteristics

1.3 Applications

Motor and actuator drivers

Power management

Synchronized rectification

1.4 Quick reference data

PHC21025

Complementary intermediate level FET

Rev. 04 — 17 March 2011 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤150 °C;

N-channel --30V

Tj≥25 °C; Tj≤150 °C;

P-channel ---30V

IDdrain current Tsp ≤80 °C; P-channel - - -2.3 A

Tsp ≤80 °C; N-channel - - 3.5 A

Ptot total power dissipation Tamb =25°C [1] --1W

Static characteristics

RDSon drain-source on-state

resistance VGS =-10V; I

D=-1A;

Tj= 25 °C; P-channel;

see Figure 16; see Figure 19

- 0.22 0.25 Ω

VGS =10V; I

D=2.2A;

Tj= 25 °C; N-channel;

see Figure 15; see Figure 18

- 0.08 0.1 Ω

PHC21025 All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 04 — 17 March 2011 2 of 16

Nexperia PHC21025

Complementary intermediate level FET

[1] Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a

thermal resistance from ambient to solder point of 90 K/W.

2. Pinning information

3. Ordering information

Dynamic characteristics

QGD gate-drain charge VGS =-10V; I

D=-2.3A;

VDS =-15V; T

j=25°C;

P-channel; see Figure 12

-3-nC

VGS =10V; I

D=2.3A;

VDS =15V; T

j=25°C;

N-channel; see Figure 11

-2.5-nC

Table 1. Quick reference data …continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphi c sy mbol

1S1source1

SOT96-1 (SO8)

2 G1 gate1

3S2source2

4 G2 gate2

5D2drain2

6D2drain2

7D1drain1

8D1drain1

sym114

D1 D1 D2 D2

S1 G1 S2 G2

Table 3. Orderi ng information

Type number Package

Name Description Version

PHC21025 SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

PHC21025 All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 04 — 17 March 2011 3 of 16

Nexperia PHC21025

Complementary intermediate level FET

4. Limiting values

[1] Pulse width and duty cycle limited by maximum junction temperature.

[2] Maximum permissible dissipation per MOS transistor . Device mounted on printed-circuit board with a thermal resistance from ambient to

solder point of 90 K/W.

[3] Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time.

[4] Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with thermal resistance

from ambient to solder point of 90 K/W.

[5] Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a Thermal resistance from ambient

to solder point of 27.5 K/W.

[6] Pulse width and duty cycle limited by maximum junction temperature.

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤150 °C; N-channel - 30 V

Tj≥25 °C; Tj≤150 °C; P-channel - -30 V

VGS gate-source voltage - - V

VGSO gate-source voltage open drain -20 20 V

IDdrain current Tsp ≤80 °C; P-chann el - -2.3 A

Tsp ≤80 °C; N-channel - 3.5 A

IDM peak drain current Tsp = 25 °C; pulsed; N-channel;

see Figure 2 [1] -14A

Tsp = 25 °C; pulsed; P-channel;

see Figure 3 [1] --10A

Ptot total power dissipation Tamb =25°C [2] -1W

Tsp =80°C; see Figure 1 [3] -2W

Tamb =25°C [4] -1.3W

[5] -2W

Tstg storage temperature -65 150 °C

Tjjunction temperature - 150 °C

Source-drain diode

ISsource current Tsp ≤80 °C; P-channel - -1.25 A

Tsp ≤80 °C; N-channel - 1.5 A

ISM peak source current Tsp = 25 °C; pulsed; P-channel [6] --5A

Tsp = 25 °C; pulsed; N-channel [6] -6A

PHC21025 All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 04 — 17 March 2011 4 of 16

Nexperia PHC21025

Complementary intermediate level FET

δ = 0.01.

Ts = 80 °C.

(1) RDSon limitation.

Fig 1. Power derating curve Fig 2. SOAR; N-channel

δ = 0.01

Ts = 80 °C.

(1) RDSon limitation.

Fig 3. SOAR; P-channel

0 200

2.5

0.5

1.0

1.5

2.0

mlb836

Ts (°C)

50 100 150

Ptot

(W)

mlb833

102

110

VDS (V)

(A)

10−1

10−1102

10−2

0.1 s

1 ms

(1)

tp =

10μs

δ =

mbe155

−10

−1

−10

−1

−10

−1−10

−10

−2

−10

−1

(V)

(A)

0.1 s

1 ms

(1)

10 μs

δ =

PHC21025 All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 04 — 17 March 2011 5 of 16

Nexperia PHC21025

Complementary intermediate level FET

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance from junction to solder

point --35K/W

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

mbe152

tp (s)

10−610−1110−2

10−3

10−510−4

102

Rth j-s

(K/W)

10−1

0.5

0.1

0.05

0.33

0.01

0.02

0.2

δ =

0.75

δ =

PHC21025 All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 04 — 17 March 2011 6 of 16

Nexperia PHC21025

Complementary intermediate level FET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown

voltage ID=-10µA; V

GS =0V; T

j=25°C;

P-channel -30--V

ID=10µA; V

GS =0V; T

j=25°C;

N-channel 30--V

VGS(th) gate-source threshold voltage ID=-1mA; V

DS =V

GS; Tj=25°C;

P-channel; see Figure 17 -1 - -2.8 V

ID=1mA; V

DS =V

GS; Tj=25°C;

N-channel; see Figure 17 1- 2.8V

IDSS drain leakage current VDS =-24V; V

GS =0V; T

j=25°C;

P-channel - - -100 nA

VDS =24V; V

GS =0V; T

j=25°C;

N-channel - - 100 nA

IGSS gate leakage current VGS =20V; V

DS =0V; T

j=25°C;

N-channel - - 100 nA

VGS =20V; V

DS =0V; T

j=25°C;

P-channel - - 100 nA

VGS =-20V; V

DS =0V; T

j=25°C;

P-channel - - 100 nA

VGS =-20V; V

DS =0V; T

j=25°C;

N-channel - - 100 nA

RDSon drain-source on-state

resistance VGS =-10V; I

D=-1A; T

j=25°C;

P-channel; see Figure 16;

see Figure 19

- 0.22 0.25 Ω

VGS =10V; I

D= 2.2 A; Tj=25°C;

N-channel; see Figure 15;

see Figure 18

- 0.08 0.1 Ω

VGS =-4.5V; I

D=-0.5A; T

j=25°C;

P-channel; see Figure 16;

see Figure 19

- 0.33 0.4 Ω

VGS =4.5V; I

D= 1 A; N-channel;

see Figure 15; see Figure 18 - 0.11 0.2 Ω

IDSon on-state drain current VDS =5V; V

GS = 4.5 V; N-channel 2 - - A

VDS =-5V; V

GS = -4.5 V; P-channel -1 - - A

VDS =-1V; V

GS = -10 V; P-channel -2.3 - - A

VDS =1V; V

GS = 10 V; N-channel 3.5 - - A

Dynamic character i stics

QG(tot) total gate charge ID= 2.3 A; VDS =15V; V

GS =10V;

Tj= 25 °C; N-channel;

see Figure 11

- 1030nC

ID=-2.3A; V

DS =-15V;

VGS =-10V; T

j= 25 °C; P-channel;

see Figure 12

- 1025nC

PHC21025 All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 04 — 17 March 2011 7 of 16

Nexperia PHC21025

Complementary intermediate level FET

QGS gate-source charge ID= 2.3 A; VDS =15V; V

GS =10V;

Tj= 25 °C; N-channel;

see Figure 11

-1-nC

ID=-2.3A; V

DS =-15V;

VGS =-10V; T

j= 25 °C; P-channel;

see Figure 12

-1-nC

QGD gate-drain charge ID=-2.3A; V

DS =-15V;

VGS =-10V; T

j= 25 °C; P-channel;

see Figure 12

-3-nC

ID= 2.3 A; VDS =15V; V

GS =10V;

Tj= 25 °C; N-channel;

see Figure 11

-2.5-nC

Ciss input capacitance VDS =20V; V

GS =0V; f=1MHz;

Tj= 25 °C; N-channel; see Figure 5 - 250 - pF

VDS =-20V; V

GS = 0 V; f = 1 MHz;

Tj= 25 °C; P-channel; see Figure 6 - 250 - pF

Coss output capacitance VDS =20V; V

GS =0V; f=1MHz;

Tj= 25 °C; N-channel; see Figure 5 - 140 - pF

VDS =-20V; V

GS = 0 V; f = 1 MHz;

Tj= 25 °C; P-channel; see Figure 6 - 140 - pF

Crss reverse transfer capacitance VDS =20V; V

GS =0V; f=1MHz;

Tj= 25 °C; N-channel; see Figure 5 -50-pF

VDS =-20V; V

GS = 0 V; f = 1 MHz;

Tj= 25 °C; P-channel; see Figure 6 -50-pF

gfs transfer conductance VDS =-20V; I

D=-1A; T

j=25°C;

P-channel 12- S

VDS =20V; I

D=2.2A; T

j=25°C;

N-channel 24.5- S

toff turn-off time VDS =20V; V

GS =10V;

RG(ext) =4.7Ω; ID=1A; R

L=20Ω;

Tj= 25 °C; N-channel

- 25 140 ns

VDS =-20V; V

GS =-10V;

RG(ext) =4.7Ω; ID=-1A; R

L=20Ω;

Tj= 25 °C; P-channel

- 50 140 ns

ton turn-on time - 20 80 ns

VDS =20V; V

GS =10V;

RG(ext) =4.7Ω; ID=1A; R

L=20Ω;

Tj= 25 °C; N-channel

- 1540ns

Source-drain diode

VSD source-drain voltage IS=1.25A; V

GS =0V; T

j=25°C;

N-channel; see Figure 13 --1.2V

IS= -1.25 A; VGS =0V; T

j=25°C;

P-channel; see Figure 14 ---1.6V

trr reverse recovery time IS= -1.25 A; dIS/dt = 100 A/µs;

VGS =0V; V

DS =-25V; T

j=25°C;

P-channel

- 150 200 ns

IS=1.25A; dI

S/dt = -100 A/µs;

VGS =0V; V

DS =25V; T

j=25°C;

N-channel

- 35 100 ns

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit

PHC21025 All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 04 — 17 March 2011 8 of 16

Nexperia PHC21025

Complementary intermediate level FET

Fig 5. Capacitance as a function of drain-source

voltage; N-channel; typical values Fig 6. Capacitance as a function of drain-sour ce

voltage; P-channel; typical values

Fig 7. Output characte ristics: drain current as a

function of drain-source volta ge ; N-channel;

typical values

Fig 8. Output characteristics: drain curren t as a

function of drain-so urc e vo lta g e; P-c ha nn e l;

typical values

600

400

200

10 20 30

mbe137

(pF)

VDS (V)

Ciss

Coss

Crss

600

400

200

−10 −20 −30

mbe144

(pF)

VDS (V)

Ciss

Coss

Crss

0 2 10 12

mbe142

468

VDS (V)

(A)

5 V

4 V

3 V

VGS =

10 V

4.5 V

3.5 V

6 V

0−2−10 −12

−10

−8

−6

−2

−4

mbe154

−4−6−8

VDS (V)

(A)

−7.5 V −6 V

−5 V

−4.5 V

−4 V

−3.5 V

−3 V

−2.5 V

VGS =

−10 V

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Product data sheet Rev. 04 — 17 March 2011 9 of 16

Nexperia PHC21025

Complementary intermediate level FET

Fig 9. Transfer characteristics: drain current as a

function of gate-source voltage; N-channel;

typical values

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; P-channel;

typical values

Fig 11. Gate-source voltage as a function of gate

charge; N- channel; typi ca l v alues Fig 12. Gate-source voltage as a function of gate

charge; P-channel; typical values

024 8

mbe141

(A)

VGS (V) 0−2−4−8

−10

−8

−6

−2

−4

mbe157

−6

(A)

VGS (V)

024 8

mbe136

QG (nC)

VGS

(V)

0−2−4−10−8

−10

−8

mbe145

−6

−4

−2

Qg (nC)

VGS

(V)

PHC21025 All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 04 — 17 March 2011 10 of 16

Nexperia PHC21025

Complementary intermediate level FET

VGD = 0.

(1) Tj = 150 °C.

(2) Tj = 25 °C.

(3) Tj = -55 °C.

VGD = 0.

(1) Tj = 150 °C.

(2) Tj = 25 °C.

(3) Tj = -55 °C.

Fig 13. Source current as a function of source-d ra in

voltage; N-channel; typical values Fig 14. Source current as a function of source-drain

voltage; P-channel; typical values

VDS ≥ ID x RDSon; Tj = 25 °C.

(1) ID = 0.1 A.

(2) ID = 0.5 A.

(3) ID = 1 A.

(4) ID = 2.2 A.

(5) ID = 3.5 A.

(6) ID = 7 A.

-VDS ≥ -ID x RDSon; Tj = 25 °C.

(1) ID = -0.1 A.

(2) ID = -0.5 A.

(3) ID = -1 A.

(4) ID = -2.3 A.

(5) ID= -4.5 A.

Fig 15. Drain-source on-state resistance as a function

of drain current; N-channel; typical values Fig 16. Drain-source on-state resistance as a function

of drain current; typical values

0 0.5 1 1.5

mbe159

(A)

VSD (V)

(1) (2) (3)

0−0.5 −1−2−1.5

−6

−2

−4

mbe158

(A)

VSD (V)

(1) (2) (3)

100

(1)(2) (6)

VGS (V)

RDSon

(mΩ)

2468

104

103

102

mda217

(3)(4)(5)

−100

VGS (V)

RDSon

(mΩ)

−2−4−6−8

104

103

102

mda165

(1) (4) (5)

(2)(3)

PHC21025 All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 04 — 17 March 2011 11 of 16

Nexperia PHC21025

Complementary intermediate level FET

Typical VGSth at ID = 1 mA; VDS = VGS = VGSth.Typical RDSon at:

(1) ID = 2.2 A; VGS = 10 V.

(2) ID = 1 A; VGS = 4.5 V.

Fig 17. Tempe ra ture coefficient of gate-source

threshold voltage Fig 18. Temperature coefficient of drain-source

on-state resistance; N-channel

Typical RDSon at:

(1) ID = -1 A; VGS = -10 V.

(2) ID = -0.5 A; VGS = -4.5 V.

Fig 19. Temperature coefficient of drain-source on-state resistance; P-channel

0.6

0.7

0.8

0.9

1.0

1.2

1.1

0 50 100 150−50

Tj (°C)

mbe138

0.6

0.8

1.0

1.2

1.4

1.8

1.6

0 50 100 150−50

mbe139

(1)

(2)

Tj (°C)

0.6

0.8

1.0

1.2

1.4

1.8

1.6

0 50 100 150−50

Tj (°C)

mbe146

(1)

(2)

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Product data sheet Rev. 04 — 17 March 2011 12 of 16

Nexperia PHC21025

Complementary intermediate level FET

7. Package outline

Fig 20. Package outline SOT96-1 (SO8)

UNIT A

max. A1A2A3bpcD

(1) E(2) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

inches

1.75 0.25

0.10

1.45

1.25 0.25 0.49

0.36

0.25

0.19

5.0

4.8

4.0

3.8 1.27 6.2

5.8 1.05 0.7

0.6

0.7

0.3 8

0.25 0.10.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

1.0

0.4

SOT96-1

detail X

vMA

(A )

pin 1 index

076E03 MS-012

0.069 0.010

0.004

0.057

0.049 0.01 0.019

0.014

0.0100

0.0075

0.20

0.19

0.16

0.15 0.05 0.244

0.228

0.028

0.024

0.028

0.012

0.010.010.041 0.004

0.039

0.016

0 2.5 5 mm

scale

O8: plastic small outline package; 8 leads; body width 3.9 mm SOT96

-1

99-12-27

03-02-18

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Product data sheet Rev. 04 — 17 March 2011 13 of 16

Nexperia PHC21025

Complementary intermediate level FET

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PHC21025 v.4 20110317 Product data sheet - PHC21025 v.3

Modifications: •Various changes to content.

PHC21025 v.3 20101217 Product data sheet - PHC21025 v.2

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Product data sheet Rev. 04 — 17 March 2011 14 of 16

Nexperia PHC21025

Complementary intermediate level FET

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in t his document ma y have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict wit h the short data sheet, th e

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, Nexperia does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of

Nexperia products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the Nexperia

product is suitable and fit for the customer’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo mer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contai ns data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

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Product data sheet Rev. 04 — 17 March 2011 15 of 16

Nexperia PHC21025

Complementary intermediate level FET

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to se ll product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, p atents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified,

the product is not suitable for aut omotive use. It i s neither qua lified nor tested

in accordance with automotive testing or application requirements. Nexperia

accepts no liability for inclusion and/or use of

non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without Nexperia’s warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

Nexperia’s specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product cl aims resulting from custome r design and

use of the product for automotive applications beyond Nexperia’s

standard warranty and Nexperia’s product specifications.

9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Nexperia PHC21025

Complementary intermediate level FET

11. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15

10 Contact information. . . . . . . . . . . . . . . . . . . . . .15

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

17 March 2011