Seriea SURFACE MOUNT TUNING DIODES 1m6520 - ame525 1M5 46 1A-1M5476A Many popular axial leaded glasa packaged tuning diode types are now available in the MSI 1M Case for surface wount assemblies. The tuning diode chips, mounted on high density alumina substrates, are epoxy coated to provide reliable operating performance in equipments ranging from mobile radios to cellular telephones. The cathode is readily distinguished from the anode by the white dot on the epoxy side and by the hexagon shape of the gold plated contact on the mounting side of the 1M Case. i Tuning Diode types not listed here may be ordered in the MSI 1M Case by replacing the two character prefix of the JEDEC or other type number by 1M. For example, to order the DO-7 packaged 1N5139 tuning diode in the 1M Case, specify the 1M5139; to order the MV1404, the 1M1404 is specified and other types are ordered in a similar manner. In some assemblies, the footprint of the 1M Case gold plated wraparound contacts may fit the solder pad layouts of surface mount diodes made by other manufacturers. Tuning diodes to meet special requirements for capacitance, capacitance ratio, Q and reverse voltage ratings will be quoted upon request. CMR: mc a, MORE HYPERABRUPT DIMENSIONAL OUTLINE CASE 1M ELECTRICAL CHARACTERISTICS (Ta = 25% L Cathode Dot _ Diode Capacitance, CT (pf)* Capacitance Ratio} Q2 @ 7 @ iv/iMiz @ avs z C1/cio0 c2/c10 1 MHz T Type No. min | nom | max || min | nom | max pin min min 1M1472 6 {12 10:1 200 sil Hs 1M1411 12 18 10:1 200 1M1410 1? 26 10:1 200 1M1409 27 39 10:1 200 Gold Plated 1M1408 39 56 10:2 200 Contacts 1M1407 56 | 980 10:1 200 \ Cat 02) 1H1406 so | 120 10:1 || 200 athade J ee 1M1404 96 120 144 10:1 200 \ LZ oO 1M1403 140 175 210 1031 200 a 1M1405 200 250 300 10:1 200 oon 1M1402 301 | 360 | 432 10:1 200 w O 1M1401 468 550 633 1431 200 = Yi a VR (min) 12 Vde @ IR=10 uAde A IR (max) 0.01 uAdc @ VR=10 Vde *To order devices with CT Nom. +10%, add suffix A; for 45%, add suffix B. Wi Case 1M 1M Solder Pad Layout Millimeters Inches Millimeters Inches -4 Sl L | sl } Dimj min max min | max Din. min max min max L 3.15 3.43 0.124 0.135 Li 3.47 3.63 0.136 0.143 tee J) a | w 2.41 2.62 0.095 0.103 wi 2.82 3.07 0.111 0.121 8s 0.69 0.84 0.027 0.033 31 1.14 1.35 0.045 0.053 T 0.91 1.17 0.036 0.046 CASE Sour e PAD na U MANUFACTURED BY electronics inc. 69electronics inc. SURFACE MOUNT TUNING DIODES HYPERABRUPT ELECTRICAL CHARACTERISTICS (Ta = 25) 70 Diode Cap, CT* (pf) @ (Volts Biag)/1 MHz Capacitagce Ratio Q4 2a VR (Vdc) IR(nAde ) @VR= c2.5 c4 ce c20 c4/ce c4/c20 50 Mfiz]}/ @ IR=10 uA iov 20V Type No. min/max) min/max min/max min/max min max | min max min min max max iM6520 | 25.0/29.0 | 18.0/22.0 80 12 100 1M6520A 18.0/22.0 7.5/10.5 1.7 2.9 160 15 100 1M6520B 18.0/22.0 7.5/10.5 3.1/3.9 4.6 7.1 160 22 100 1M6520C 19.0/21.0 7.8/9.2 2.0 2.7 160 15 100 1M6520D 19.0/21.0 7.8/9.2 3.1/3.9 2.0 2.7 4.0 6.8 160 22 1c0 1M6522 62.0/72.0 45.0/55.0 65 12 100 1M6522A 45.0/55.0 18.0/25.6 1.8 2.1 125 15 100 1M6522B 45.0/55.0 18.0/25.0 7.3/9.2 4.9 7.5 125 22 100 1M6822 47.5/52.5 16.4/21.6 125 15 100 1M6522D 47.5/52.5 18.4/21.6 7.3/9.2 2.2 2.8 6.2 6.9 125 22 100 1M6523 135.0/160.0}100.0/120.0 40 12 100 1M6523A 100.0/120.0 |39.0/55.0 1.8 3.1 80 415 100 1M6523B 100.0/120.0 |39.0/55.0 116.0/20.0 .0 7.5 80 22 100 1M6523c 104.5/115.5 141.4/48.6 2.1 2.6 80 45 100 41M6523D 104.5/115.5 (41.4/498.6 116.0/20.0 2.1 2.8 .2 7.2 80 22 100 1M6524 199.0/225.0;140.0/170.0 35 12 100 1M6524A 140.0/170.0 {55.0/80.0 1.7 3.4 70 15 100 1M6524B 140.0/170.0 155.0/80.0 |22.5/28.0 5.0 7.6 70 22 100 1M6524c 147.0/163.0 |59.8/70.2 2.1 2.8 70 45 100 1M6524D 147.0/163.0 $59.8/70.2 )22.5/28.0 2-1 2.8 5.2 7.2 70 22 100 1M6525 250. 0/290. 0] 180.0/220.0 30 12 100 1M6525A 180.0/220.0 |70.0/105 1.7 321 60 15 100 1M65255 180.0/220.0 |70.0/105 29.0/36.0 5.0 7.6 50 22 100 1M6525C 190.0/210.0 |78.0/92.0 2.0 2.7 60 15 100 1M6525D 190.0/210.06 |78.0/92.0 |29.0/36.0 2.0 2.7 5.3 7.3 60 22 100 ELECTRICAL CHARACTERISTICS (Ta = 25") ABRUPT ae Bigh Q-For Hany Good Q For Recelvers Righear 45V VR Popular 60 Vv Solld 65 Vv VHF-UaF Uses and Synthesizera with Good Q Varactor Righ Q Varactors rd Dicde Cap. ro) CT*=c+108 Ratio Q4e@ Ratio qa e Ratio qe Ratio Qe Ratio gee @ 4v/1 Miz 2/C30 50 Miz c2/c30 50 MHz c2/c40 $0 MHz c4/c60 50 Miz casC60 =50 MHr | ead pe No. min/typ min [Type No. min/typ min Frype No. min/typ min PType No. min/typ min fiType No. min/typ min OQ 6.8 IMS461A 2.7/3.1 600 PIM5441A 2.5/3.1 450 PIMS661A 3.1/3.3 600 9 1M5139 2.7/2.9 350 J1M5696A 2.7/2.9 450 Ww 8.2 IMS462K0 2.8/3.1 600 FiMS442A 2.5/3.1 450 GiINS682A 1.8/3.2 600 AMS6OSTA 2.7/2.9 459 10.0 AMS463A 2.6/3.1 550 JIMS4439A 2.6/3.1 400 PIMS6OIA 3.2/3.4 550 J 1M5140 2.8/3.0 300 f1MS698A 2.8/3.0 400 12.0 IMS464A 2.6/3.1 550 PIMS4Q4A 2.6/3.1 400 FIMS6R4A 3.2/3.4 550 FIMS141 2.8/3.0 300 BIMS699A 2.8/3.0 400 15.0 IMS465A 2.0/3.1 $90 PIMS445A 2.6/3.1 400 PIMS665A 1.2/3.4 550 Pimsi4a2 2.8/3.0 250 PIMS700A 2.8/3.0 400 14.0 IMS466A 2.9/3.1 500 FIMS46A 2.6/3.1 350 FAMS6BGA 3.2/3.4 $00 FIMS143) 9 = 2.8/3.0 250 JIMS701A 2.6/3.0 375 20.0 IMS467A 2.9/3.1 500 JIM5S47A 2.6/3.1 350 22.0 IMS468A) 2.9/3.2 500 HIMS440A 2.6/3.2 350 PIMS6Q7A 3.3/3.5 500 H1M5144 3.2/3.4 200 FLMSTOZA 4.2/3.4 375 27.0 IM5469A) 0 -2.9/).2 SOO PiIMS4Q9A 2.6/3.2 350 AIM5686A 3.3/3.5 $00 gIMs1d5 1.2/3.4 200 BIMS703A 3.2/3.4 350 33.0 IMS470A 2.9/3.2 500 FIMS450A 2.6/3.1 350 FIMS6B9A 3.3/3.5 S00 F1M5146 3.2/3.4 200 PIMS706A 9.2/3.4 350 39.0 AMSQTLA 2.9/3.2 450 (IMS451A 0 2.6/3.2 300 HIMS690A 3.3/3.5 450 PiMsi47 3.2/3.4 200 JAIMS7OSA 3.2/3.4 325 47.0 IMS472A00 2.9/3.2 400 PIMS452A 2.6/3.2 250 PIMS691A 9.3/3.5 400 g#1mM5148 3.2/3.4 200 F1IH5706A 3.2/3.4 300 56.0 IM5S473A 2.9/9.3 300 F1M5459A 2.6/3.3 200 FIMS692A 3.3/3.5 350 IM5707A) 3.2/3.4 225 68.0 IMS474A0 2.9/3.3 250 PIMS454R 2.7/3.1 175 PIMS69IA 3.3/3.5 250 AMS7TOQA 3.2/3.4 175 82.0 IMS675A) 2.9/3.3 225 FIMS455A 2.7/3.9 175 P1IMS694A 3.3/9.5 225 IM57O9A 3.2/3.4 150 100.0 IMS476A) 2.9/3.3 200 FiIMS456A 2.7/3.3 175 P1MS5S6SSA 3.3/3.5 200 IMS710A 3.2/3.4 150 VA {min) 340 Vide @ IR 10 Ade 45 Cde min @ TR=10 uA | 60 Vde win @ IR=10 uA | 65 Vdc min @ IR=10 uA IR (max) 0.02 uAdc @ VR=25 Vde 20 nA max @ YR=40 Vdc J 20 nA max B VA=55 Vde 20 nA max @ VR=60 Vdc * To order devices 65%, repince suffix A with suffix B (V1 Uj MANUFACTURED BY = electronics inc.