SOWER:MOS FET [vetocu FIELD EFFECT POWER TRANSISTOR 80 VOLTS. RDS(ON) = 5.0 2 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low N-CHANNEL D on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in SOURCE most switching applications including: switching power supplies, ORAIN inverters, converters and solenoid/relay drivers. Also, the extended s safe operating area with good linear transfer characteristics makes DWeNsas EO 287 cna it well suited for many linear applications such as audio amplifiers 215(5.46 and servo motors. 16044.06) 4 Applications eats f = LED and lamp drivers ae 20) 2106539) e TTL and CMOS to high current interface me oso(27) High speed switches lI r Line drivers Relay drivers soln ance o[ ae, ret] Transformer drivers | (l t a 022156) or [ 022156) 4 020151) ] .016(.41) 016(.41) 014(.36} Features eae sosiesn Directly drives inductive loads 016,41) ee High speed, high peak current switching Ort) We 2 NN. teorz0n) 16514.20 . ae 0-0-6 - .125(3.18) Inherent current sharing capability when paralleled Ft 4 t Directly interfaces to CMOS, DTL, TTL logic 06511.40 i- Simple straight-forward DC biasing 0451.14) je ase Jnherently procection from thermal runaway UNIT TYPE TERM.1 | TERM.2 TERM.3 TAB POWER MOS FET | 10-237 | SOURCE} GATE DRAIN DRAIN maximum ratings (T, = 25C) (unless otherwise specified) RATING SYMBOL VN10KMA UNITS Drain-Source Voltage Voss 60 Volts Drain-Gate Voltage, Ras = 1M0 VpGR 60 Voits Continuous Drain Current @ Ta = 25C Ip 0.5 A Peak Drain Current low 1.0 A Gate-Source Voltage Ves +30 Volts Total Power Dissipation @ Ta = 25C Pp 1.0 Watts Derate Above 25C 8 mW/C Operating and Storage Junction Temperature Range Ty TstG -55 to 150 c thermal characteristics Thermal Resistance, Junction to Ambient ReJA 20 C/W Maximum Lead Temperature for Soldering Purposes: 1/16 from Case for 10 Seconds Th 300 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 325electrical characteristics (T, = 25C) (unless otherwise specified) } CHARACTERISTIC | SYMBOL | MIN | TYP MAX UNIT off characteristics Drain-Source Breakdown Voitage . _ _ (Vas = OV, Ip = 100 A) BVpss 60 Volts Zero Gate Voltage Drain Current (Vg = 40V, Vag = OV) pss = = 10 uA Gate-Source Leakage Current _ (Vas = 15V, Vpg = OV) lass 100 nA on characteristics Gate Threshold Voltage (Vps = Vos Ip = 1 a A) VagtH) | 0.8 2.5 Volts Drain-Source Saturation Voltage (V@g = 10V, Ip = .5A) 9 VpDS(ON) | 2.5 V One Drain Current 0.25 A ps = 25V, Ves = 5V) D(ON|) ' 7 (Vps = 25V, Veg = 10V) (ON) 0.50 _ _ Forward Transconductance (Vps = 18V, Ip = 0.5A) Sts 10 20 mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 48 pF Output Capacitance Vps = 25V Coss _ 16 _ pF Reverse Transfer Capacitance f= 1MHz Crss 2 _ pF switching characteristics Turn-on Delay Time See switching times td(on) _ ns Turn-off Delay Time waveform below tgioff) _ ns *Pulse Test: Pulse width < 300 ws, duty cycle = 2% PULSE WIDTH --- 80% \ 50% 90% 50% 10% INPUT 90% e ton rP td ~ OUTPUT oo | td Nc io% e toff SWITCHING TIME TEST WAVEFORMS 326 | 10% 90%