CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected e CMOS for optimum speed/power High speed 10ns Lowactive power ~ 935 mW Low Standby Power 220 mW TYL-compatible inputs and outputs Capable of withstanding greater than 200LV electrostatic discharge CY7C185 CY7C186 Functional Description The CY7Ci85 and CY7C186 are high-per- formanceCMOS static RAMs organizedas 8192 words by 8 bits, Easy memory expan- sion is provided by an active LOW chip en- able (CE), an active HIGH chip enable (CE,), and active LOW output enable (OE) and three-state drivers, Both devices have an automatic power-down feature (CE), reducing the power consumption by over 75% when deselected. The CY7C185 is in the space-saving 300-mil-wide DIP package and leadless chip carrier. The CY7C186 is in the standard 600-mil-wide package, An active LOW write enable signal (WE) controls the writing/reading operation of 8,192 x 8 Static R/-W RAM the memory, When CE, and WE inputs are both LOW and CE, is HIGH, data on the eight data input/output pins (1/Op through I/ 7) is written into the memory location ad- dressedby theaddress present onthe address pins (Ag through Aj2). Reading the device is accomplished by selecting the device and en- abling the outputs, CE, and OEactive LOW, CE active HIGH, while WE remains inac- tive or HIGH. Under these conditions, the contents of the location addressed by the in- formation on address pins is present on the eight data input/output pins, Theinpul/outputpins remain ina high-impe- dance state unless the chip is selected, out- puts are enabled, and write enable (WE) is HIGH. A die coat is used to insure alpha im- munity. Logic Block Diagram INPUT BUFFER VO FO, "Oz Pin Configurations DIP/SOJ Top View Ay fan Os a g eBoy x 9 256 x 32 x8 z ms spi x As a ARRAY. g orese Ae = a YO, Ar & @ 10 S Ag ce VOg ha AL ce VOy he We i Ce VOg fiz? c1es-1 0165-3 Selection Guidelt! 7185~-20 | 7C18525 | 7C18535 | 7c18545 | 70185 55 7C18S~10 | 7C18512 | 7C185~15 | 7C186-20 | 7186-25 | 7C186-35 | 7018645 | 7C1sGee Maximum Access Time (ns) 20 25 35 20 25 35 45 55 Current gn ane 170 170. 160 120 100 100 100 80 Corrent (maby 40/20 | 40/20 | 40720 | 2020 | 2020 | 2020 | 2020 | 2000 Shaded areas contain advanced information. Note: 1. Formiilitary specifications, see the CY7C185A/CY7C186A datasheet, 2-333 WBE D EG 2589662 0006595 9 EACYP THEA Ty SRAMsCYPRESS SEMICONDUCTOR 4BE D EM 25859662 0006596 O EACYP . a CY7C185 CipRess T-46-23-12 CY7C186 = SEMICONDUCTOR Maximum Ratings (Abovewhich the useful life may be impaired. Foruserguidelines, Output Current into Outputs (Low) ......-.-.-...66 20mA not tested.) StaticDischarge Voltage .......-..2.sseeeeevense >2001V Storage Temperature .....cceceeeeeees ~ 65Cto +150C = (per MIL-STD-883, Method 3015) Ambient Temperaturewith Latch-UpCurrent .........--ecerereeerenenees >200 mA . o. PowerApplied ......:.c2e008 teseeeeee 799C to 125C Operating Range Supply Voltage to Ground Potential........ 0.5V to +7.0V Ambient DC Voltage Applied to Outputs Range Temperature Vec in High Z State ...cccccceceeveeveene woe 7 0.5V to +7.0V Commercial - 0Cto +70C 5V + 10% DC Input Voltage ........ cece eee cece 3.0V to +7.0V Electrical Characteristics Over the Operating Range 7C18510 7C18512 7C185-15 Parameters Description Test Conditions Min. | Max. | Min. | Max. | Min. | Max. | Units Vou Output HIGH Voltage | Vcc = Min., Ion = ~ 4.0mA 2.4 2.4 2.4 Vv VoL Output LOW Voltage | Vcc = Min., Io, = 8.0mA 0.4 0.4 0.4 Vv Vin Input HIGH Voltage 22 | Voce | 2.2 | Veo | 2.2 | Voc Vv Vi. Input LOW Voltagel?! -3.0] 08 | -30] 08 |-30] 08 | Vv Ix Input Load Current GND < V; < Vcc ~10 | +10 | -10 | +10 | -10 | +10 | pA Ioz Output Leakage GND < Vrs Vcc, 10 | +10 | 10 | +10 | -10 |] +10 | pA Current Output Disabled Tos Output Short Vcc = Max., 350 350 350 | mA CircuitCurrent!3} Vout = GND ; Iec Vcc Operating Vec = Max., 170 170 160 | mA Supply Current Iour = OmA Ispi AutomaticCE, Max. Vcc, CE; > Vist, 40 40 40 | mA Power-DownCurrent | Min. Duty Cycle = 100% Isp Automatic CE; Max. Vcc, CE; > Vcc 0.39, 20 20 20 mA Power-DownCurrent | Viy > Vcc 0.3V or Vin <0.3V Shaded areas contain advanced information. 2-334CYPRESS SEMICONDUCTOR WBE D MM 258%bb2 OO0bS4? 2 EaCYP. a. CY7C185 SS = SEMICONDUCTOR Electrical Characteristics Over the Operating Range(continued) 7018520 | 7C185~25,35,45 | 7C18555 7C18620 | 7C18625,35,45 | 7C186-55 ~ Parameters Description Test Conditions Min. | Max.] Min. | Max. | Min. | Max. | Units f Vor Output HIGH Voltage | Vcc = Min., Ion = 4.0mA 2.4 2.4 2.4 Vv n Voi Output LOW Voltage | Vcc = Min, Io, = 8.0mA 0.4 0.4 0.4 Vv = Vin Input HIGH Voltage 22 | Veco} 2.2 Veo | 2.2 | Veco] V a Vit Input LOW Voltagel21 3.0 | 08 | 3.0 0.8 | -3.0} 08 v Ix Input Load Current GND < V; < Vcc -10 | +10 | -10 +10 | -10 | +10] pA loz Output Leakage GND < Vi < Vcc, : -10 | +10 | -10 | +10 | -10 | +10] pA Current Output Disabled ; los OutputShort Voc = Max., 300 ~300 ~300 | mA CircuitCurrentl3] Vout = GND Tec Vcc Operating Voc = Max., . 120 100 : 80 | mA Supply Current Tout = OmA Ispi Automatic CE, Max. Vcc, CE} >. Vin, 20 20 20 mA Power-DownCurrent | Min. Duty Cycle = 100% Isp2 AutomaticCE; Max. Vcc, CEy > Vcc 0.3V, 20 20 20 | mA Power-DownCurrent | Vin > Vcc 0.3V or Vin <0.3V Capacitancel4l Parameters Description Test Conditions Max. Units Cn InputCapacitance Ta = 25C, f= 1 MHz, 10 pF Cout OutputCapacitance Vec = 5.0V 10 pF Notes: 2. Vi,min. = 3.0V for pulse durations less than 30 ns. 4, Tested initially and after any design or process changes that may affect 3. Notmore than 1 outputshouldbe shorted atone time. Duration of the these parameters. short circuit should not exceed 30 seconds, AC Test Loads and Waveforms BV Ri 48192 sv Ai 4819 OAM ow cure ounrs$} ALL INPUT PULSES 30 pF Re 5 pF R2 INCLUDING [ sa INCLUDING I e580 JIGAND=> = JGAND => == SCOPE SCOPE C1854 (a) (b) Equivalent to: THEVENIN EQUIVALENT 1672 OUTPUT 0 9 4,73) 2-335CYPRESS SEMICONDUCTOR 4BE D Ml 2548%bb2 0006596 4 Ecacyp =. . CY7C185 SSS 7 Sirmsss T-46-23-12 CY7C186 Ss & SEMICONDUCTOR Switching Characteristics Overthe Operating Rangel] 7C185~10 7C185-12 7C18515 Parameters Description Min. | Max. Min. Max. Min. Max. Units READ CYCLE : tre Read Cycle Time 10 12 15 ns taa Address to Data Valid 10 | 12 15 ns toHa Data Hold from 3 3 3 ns AddressChange tAcEI CE; LOW to Data Valid 10 ; 12 - 15 ns tace2 CE, HIGH to Data Valid 10 12 15 ns tpoz. OE LOW to Data Valid 5 6 10 ns tLZOB OE LOW to Low Z 0 0 3 ns tyz0B OE HIGH to High Z 5 7 8 ns tLZcE1 CE, LOW to Low Zi] 2 ns tezcR2 CE, HIGH to Low Z 2 ns tyzcR CE, HIGH to High 218 91 5 7 8 ns CE, LOW to High Z tpu CE, LOW to Power-Up 0 Q 0 ms tpp CE, HIGH to Power-Down 10 12 15 ns WRITE CYCLEE] two Write Cycle Time 10 12 15 ns tsce1 CE, LOW to Write End 8 12 tis tscr2 CE, HIGH to Write End 12 ns taw Address Set-Up to 12 ns Write End tHa Address Holdfrom 0 0 0 ns Write End tsa Address Set-Up to 0 0 0 ns Write Start tpwe WE Pulse Width 8 12 ns tsp Data Set-Up to Write End 5 10 ns typ Data Hold from Write End 0 0 ns tuzwe WE LOW to High ZI 6 6 7 ns tizwe WE HIGH to Low Z 2 3 3 ns Shaded areas contain advanced information, Notes: 5, Test conditions assume signal transition time of Snsorless,timingref- 7. erence levels of 1.5V, input pulse levels of 0 to 3.0, and output loading of the specified Ig, /loz and 30-pF load capacitance. At any given temperature and voltage condition, tuzce is less than trzce for any given device. 8. The internal write time of the memoryis defined by the overlap of CEy 6. tyzoe, tazce, and tuzwe ate specified with Cy, = 5 pF as in part (b) of AC Test Loads. Transition is measured +500 mV from steady state voltage. 2-336 LOW, CE2 HIGH, and WE LOW. Bath signals must be LOW to initi- ate awrite and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.+ CYPRESS SEMICONDUCTOR 46E D EM 2589662 0006599 & EacyPp te em, = -AG-23-12 CY7C185 = 7 Crpenss 1-46 CY7C186 === = = SEMICONDUCTOR Switching Characteristics Over the Operating Rangel! (continued) 7C185-20 7C18525 7C185-35 7C185~45 7C18555 : 7C18620 7C186-25 7C18635 718645 70186-55 Parameters Description Min. | Max. Min. | Max. Min. | Max. | Min. | Max. | Min. | Max. | Units Ej READ CYCLE trc Read Cycle Time 20 25 35 45 55 ns = taa Address to Data Valid 20 25 35 45 55 ns ec toHa Data Hold from 5 5 5 5 5 ns ess Change tacet CE; LOW to Data Valid 20 25 35 45 55 ns tacez CE; HIGH to Data Valid 20 25 25 30 40 | os took OE LOW to Data Valid 10 12 15 20 25 ns tLZOR OF LOW to LowZ 3 3 3 3 3 ns tHZ0E OE HIGH to High 76] 8 10 12 15 20 ns tizce1 CE, LOW to Low ZU71 5 5 5 5 5 ns tzcE2 CE, HIGH to Low Z 3 3 3 3 3 ns tzce CE; HIGH to High Z/8, 9) 8 10 15 15 20 1s CE, LOW to High Z tpy CE; LOW to Power-Up 0 0 0 0 0 ns tpp CE, HIGH to Power-Down 20 20 20 25 25 ns WRITECYCLEE) twe Write Cycle Time 20 20 25 40 50 ns tscri CE; LOW to Write End 15 20 25 30 40 ns tscE2 CE, HIGH to Write End 15 20 20 25 30 ns taw address Set-Upto 15 20 25 30 40 ns j rite End tH pidress Hold from 0 0 0 0 0 ns rite End tsa Ptess Set-Up to 0 0 0 0 0 ns riteStart tpwe WE Pulse Width 15 15 20 20 25 ns tsp Data Set-Up to Write End 10 10 15 15 25 is tup Data Hold from Write End 0 0 0 0 0 ns tazwe WE LOW to High Zl 7 7 10 15 20 ns ttzwe WE HIGH to Low Z 5 5 5 5 5 ns 2-337net - + ame CYPRESS SEMICONDUCTOR 4BE D EE 258%9bbe OOObLO0 9 EaCcypP =. 46-23-12 CY7C185 a 1-46-23 CY7C186 & SEMICONDUCTOR Switching Waveforms Read Cycle No. 119 10] : tac ADDRESS 4 x tra toHa DATA OUT PREVIOUS DATA VALID XXX DATA VALID 0185-6 Read Cycle No. 2{11, 12] : - cei tre {--_ \ 7 A. ee CE, tace OE ___-] tyzoeE > toe po tHzce ig HIGH IMPEDANCE IMPEDANCE DATA QUT ce DATA VALID _ . tizce > L_____. tpy tep Voc Icc SUPPLY 50% 50% CURRENT ISB 188-7 Write Cycle No, 1 (WE Controlled) (14 12] ADDRESS CE; CE, OE WE tsp DATA IN DATA-IN VALID tuzwe tawe HIGH IMPEDANCE DATA I/O DATA UNDEFINED ) anne, <n C1858 Notes: __ _ 9, Device is continuously selected. OF, CE = Vy, CE2 = Viry, 11, WE is HIGH for read cycle. 10. Address valid prior to or coincident with CE transition LOW, 12, Data 1/O is high impedance ifOE = Vinz. 2-338& CYPRESS SEMICONDUCTOR | ( = SEMICONDUCTOR 2 CYPRESS 4BE D Ea 2589662 0006601 O Eacyp Switching Waveforms (continued) Write Cycle No. 2 (CE Controlled) [19 12, 13} ADDRESS CE, DATA IN DATA 1/0 Note: 13. If CE goes HIGHsimultaneous! ina high-impedance state, - Typical DC and AC Characteristics a NORMALIZED Ig, | NORMALIZED tag 1.2 1.0 0.8 06 0.4 0.2 CE, WE -+ ae Tae CY7C185 T-46-23-19 CY7C186 tscre tewe tsp DATA-IN VALID DATA UNDEFINED NORMALIZED SUPPLY CURRENT 14 vs, SUPPLY VOLTAGE Isp 0.0 40 45 50 65 SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME ~ > =~ = ho & = oom. S vs, SUPPLY VOLTAGE 6.0 45 55 SUPPLY VOLTAGE (V) 6.0 y with WE HIGH, the output remains NORMALIZED Icg Isp NORMALIZED tas tuzwe rm NORMALIZED SUPPLY CURRENT vs, AMBIENT TEMPERATURE 1.2 1.0 loc 0.8 0.6 0.4 0.2 0.0 55 25 125 AMBIENT TEMPERATURE (C) NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE 1.6 14 = a 1.0 Veco = 5.0V 0.8 b= 0.6 ~55 25 125 AMBIENT TEMPERATURE (C) 2-339 H IGH IMPEDANCE SRAMs a C1869 OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE 8 8 8 OUTPUT SOURCE CURRENT (mA) 8 40 20 0 00 10 30 30. 40 OUTPUT VOLTAGE (V) OUTPUT SINK CURRENT ys. OUTPUT VOLTAGE = 140 < = i20 kK @ 100 i g 3 80 2 60 a 5 40 E a 20 0 00. 10 20 30. 40 OUTPUT VOLTAGE (VjFae CYPRESS SEMICONDUCTOR ULE D i 3584bb2 OOOLbOe 2 EACYP =, 46 93-12 : CY7C185 SSS Siicannuctor 1. C7C186 Typical DC and AC Characteristics (continued) TYPICAL POWER-ON CURRENT TYPICAL ACCESS TIME CHANGE vs, SUPPLY VOLTAGE vs. QUTPUT LOADING NORMALIZED Icc vs. CYCLE TIME 3.0 30.0 1.25 T Voc = 5.0V 978 ee 8 Yeon asv a 2.0 5 20.0 R 1.00 ye 3 1.5 i 15.0 S - 9 10 & 10.0 Veo = 4.8V Q 075 - 0.5 5.0 Ta = 25C | 00 1.0 30 4060 9 400600800 1000 to 20 30 40 SUPPLY VOLTAGE (V) CAPACITANCE (pF) CYCLE FREQUENCY (MHz) Truth Table CE, | CE, | WE | OE | Inputs/Outputs Mode Hy} xX | X | X | HighZ Deselect/Power-Down X | Li X | X | HighZ Deselect L H H L | Data Out Read L H L X | DataIn Write L H H | H { Highz Deselect Address Designators Address Address Pin Name Function Number - - A4 X3 2 AS X4 3 A6 X5 4 A7 X6 5 A8& X7 6 AQ Yi 7 Alo Y4 8 All Y3 9 A12 YO 10 AO Y2 21 - Al X0 23 A2 X1 24 A3 X2 25 2~340CYPRESS SEMICONDUCTOR WBE D 254%bbe OOObbOF 4 EACcyYP SRAMs a CY7C185 if ippsss T-46-23-12 CY7C186 = SEMICONDUCTOR Ordering Information Speed Package | Operating Speed Package | Operating (ns) Ordering Code Type Range (us) Ordering Code Type Range 10 CY7Ci8510DC D22| Commercial 20 CY7C18620DC D16 Commercial CY7C18510PC. P2t CY7C18620PC P15 CY7C18510VC val _ 25 CY7C18625DC Di6 | Commercial 12 CY7C18512DC D22 | Commercial CY7C18625PC P15 CY7C18512PC P21 35 CY7C18635DC Di6 Commercial CY7C185-12VC V21 CY7C186-35PC P15 15 CY7C185-15DC D22 | Commercial 45 CY7C18645DC D1i6 | Commercial CY7C18515PC P21 CY7C18645PC P15 CY7C185~15VC v21 55 CY7C186S55DC Di6 | Commercial 20 CY7C18520DC D22 =| Commercial CY7C186S5PC PiS CY7Ci8520LC L54 CY7C18520PC Pai : CY7C185-20VC v21 25 CY7C18525DC D22_| Commercial CY7C1i8525LC L54 CY7C185-25PC P2i CY7C18525VC V21 , 35 CY7C18535DC D22 {| Commercial CY7C18535LC L54 CY7C18535PC P21 CY7C18535VC V2i1 45 CY7C18545DC D22 Commercial CY7C185~45LC L54 CY7C185-45PC P2t CY7C185~45VC v21 55 CY7C185~-55DC D22 | Commerciat CY7C185~55LC L54 CY7C18555PC P21 CY7C18555VC v2i Shaded areas contain advanced information. Document #: 3800037-G 2-341 ara ae ea ea = ed