1www.semtech.com
RClamp2504N & RClamp3304N
RailClamp
2.5V & 3.3V TVS Arrays
PROTECTION PRODUCTS - RailClamp
Description Features
Circuit Diagram Package Configuration
Revision 01/15/2008
A RailClamp is a low capacitance TVS array designed
to protect high speed data interfaces. This series has
been specifically designed to protect sensitive compo-
nents which are connected to data and transmission
lines from overvoltage caused by ESD (electrostatic
discharge), CDE (Cable Discharge Events), and Light-
ning.
The unique design incorporates surge rated, low
capacitance steering diodes and a TVS diode in a
single package. During transient conditions, the
steering diodes direct the transient current to ground.
The internal TVS diode clamps the transient voltage to
a safe level. The low capacitance array configuration
allows the user to protect up to four high-speed data
lines.
The RClampTM3304N and RClampTM2504N are con-
structed using Semtech’s proprietary EPD process
technology. The EPD process provides low stand-off
voltages with significant reductions in leakage current
and capacitance over silicon-avalanche diode pro-
cesses. They feature a true operating voltage of 2.5
volts and 3.3 volts for superior protection.
These devices are in a 10-pin, RoHS/WEEE compliant,
SLP2626P10 package. It measures 2.6 x 2.6 x
0.60mm. The leads are spaced at a pitch of 0.5mm
and are finished with lead-free NiPdAu. The high surge
capability (Ipp=25A, tp=8/20µs) means it can be used
in high threat environments in applications such as
Gigabit Ethernet, telecommunication lines, and digital
video.
Applications
Mechanical Characteristics
USB 2.0
10/100/1000 Ethernet
Digital Visual Interface (DVI)
T1/E1 Secondary Protection
T3/E3 Secondary Protection
Analog Video
Transient protection for high-speed data lines to
IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 25A (8/20µs)
Array of surge rated diodes with internal TVS Diode
Small package saves board space
Protects up to four I/O lines
Low capacitance (<5pF) for high-speed interfaces
Low leakage current and clamping voltage
Low operating voltage: 2.5V and 3.3V
Solid-state silicon-avalanche technology
SLP2626P10 10L package
RoHS/WEEE Compliant
Nominal Dimensions: 2.6 x 2.6 x 0.60 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking Code + Date Code
Packaging : Tape and Reel
Pin 5
Pin 1 Pin 9 Pin 3 Pin 7
Gnd
2.60
2.60
C
L
C
L
12
0.50 BSC
0.60
22008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
RClamp2504N & RClamp3304N
Absolute Maximum Rating
Electrical Characteristics (T=25oC)
Note 1: I/O pins are pin 1, 3, 7, and 9
N4052pmalCR
retemaraPlobmySsnoitidnoCmuminiMlacipyTmumixaMstinU
egatloVffO-dnatSesreveRV
MWR
5.2V
egatloVhguorhT-hcnuPV
TP
I
TP
Aµ2=7.2V
egatloVkcaB-panSV
BS
I
BS
Am05=0.2V
tnerruCegakaeLesreveRI
R
V
MWR
C°52=T,V5.2=5.0Aµ
egatloVgnipmalCV
C
I
PP
t,A1=
p
sµ02/8=5.4V
egatloVgnipmalCV
C
I
PP
t,A01=
p
sµ02/8=5.7V
egatloVgnipmalCV
C
I
PP
t,A52=
p
sµ02/8=51V
ecnaticapaCnoitcnuJC
j
dnuorGdnasnipO/IneewteB
V
R
zHM1=f,V0=
8.35Fp
snipO/IneewteB
V
R
zHM1=f,V0=
0.2Fp
gnitaRlobmySeulaVstinU
)sµ02/8=pt(rewoPesluPkaePP
kp
054sttaW
)sµ02/8=pt(tnerruCesluPkaePI
PP
52A
)riA(2-4-00016CEIrepDSE
)tcatnoC(2-4-00016CEIrepDSE
V
DSE
52
51
Vk
erutarepmeTgnitarepOT
J
521+ot55-C°
erutarepmeTegarotST
GTS
051+ot55-C°
3
2008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
RClamp2504N & RClamp3304N
N4033pmalCR
retemaraPlobmySsnoitidnoCmuminiMlacipyTmumixaMstinU
egatloVffO-dnatSesreveRV
MWR
3.3V
egatloVhguorhT-hcnuPV
TP
I
TP
Aµ5=5.3V
egatloVkcaB-panSV
BS
I
BS
Am05=8.2V
tnerruCegakaeLesreveRI
R
V
MWR
C°52=T,V3.3=5Aµ
egatloVgnipmalCV
C
I
PP
t,A1=
p
sµ02/8=5.5V
egatloVgnipmalCV
C
I
PP
t,A01=
p
sµ02/8=5.01V
egatloVgnipmalCV
C
I
PP
t,A52=
p
sµ02/8=81V
ecnaticapaCnoitcnuJC
j
dnuorGdnasnipO/IneewteB
V
R
zHM1=f,V0=
8.35Fp
snipO/IneewteB
V
R
zHM1=f,V0=
0.2Fp
42008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
RClamp2504N & RClamp3304N
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve
0
10
20
30
40
50
60
70
80
90
100
110
0 25 50 75 100 125 150
Ambient Temperature - TA (oC)
% of Rated Power or IPP
Normalized Junction Capacitance
vs. Reverse Voltage
Pulse Waveform
0
10
20
30
40
50
60
70
80
90
100
110
0 5 10 15 20 25 30
Time (µs)
Percent of I PP
e-t
td = IPP/2
Waveform
Parameters:
tr = 8µs
td = 20µs
Clamping Voltage vs. Peak Pulse Current
I/O to I/O
Clamping Voltage vs. Peak Pulse Current
I/O to GND
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
00.511.522.5
Reverse Voltage - VR (V)
CJ(VR) / CJ(VR=0)
f = 1 MHz
0
5
10
15
20
0 5 10 15 20 25
Peak Pulse Current - IPP (A)
Clamping Voltage - VC (V)
Waveform
Parameters:
tr = 8µs
td = 20µs
RClamp2504N
RClamp3304N
0
5
10
15
20
25
0 5 10 15 20 25
Peak Pulse Current - IPP (A)
Clamping Voltage - VC (V)
Waveform
Parameters:
tr = 8µs
td = 20µs
RClamp2504N
RClamp3304N
0.01
0.1
1
10
0.1 1 10 100 1000
Pulse Duration - tp (us)
Peak Pulse Power - PPP (kW)
5
2008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
RClamp2504N & RClamp3304N
Insertion Loss S21 (I/O to Ground) ESD Clamping
(8kV Contact per IEC 61000-4-2)
Typical Characteristics
Note: Data is taken with a 10x attenuator
START
. MHz 3
STOP 000
.
000 000 MHz
CH1 S21 LOG 6 dB / REF 0 dB
1: -1.0230 dB
800 MHz
2: -1.1051 dB
900 MHz
3: -2.0922 dB
1.8 GHz
4: -3.0779 dB
2.5 GHz
5: -4.5358 dB
2.7 GHz
0 dB
-6 dB
-12 dB
-18 dB
-24 dB
-30 dB
-36 dB
1
GHz
100
MHz
3
GHz
10
MHz
1
MHz
1
2
3
4
-48 dB
-42 dB
62008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
RClamp2504N & RClamp3304N
Circuit Diagram
Applications Information
Pin 5
Pin 1 Pin 9 Pin 3 Pin 7
Gnd
Figure 1Figure 1
Figure 1Figure 1
Figure 1. Pin Conf. Pin Conf
. Pin Conf. Pin Conf
. Pin Configuration (Tiguration (T
iguration (Tiguration (T
iguration (Top Side Vieop Side Vie
op Side Vieop Side Vie
op Side View)w)
w)w)
w)
2
1
3
6
8
4
5
GND
7
9
10
niPnoitacifitnedI
9,7,3,1seniLtuptuO/tupnI
01,8,6,4,2tcennoCoN
5tcennoCoN
)ylppusCDaotnipsihttcennoctonoD(
baTretneCdnuorG
Device Connection Options for Protection of Four
High-Speed Data Lines
These devices are designed to protect low voltage data
lines operating at 2.5 volts or 3.3 volts. When the
voltage on the protected line exceeds the reference
voltage the steering diodes are forward biased,
conducting the transient current away from the
sensitive circuitry.
Data lines are connected at pins 1, 3, 7 and 9. The
center pin should be connected directly to a ground
plane. The path length is kept as short as possible to
minimize parasitic inductance. Pins 2, 4, 6, 8, and 10
are not connected.
Note that pin 5 is connected internally to the cathode
of the low voltage TVS. It is not recommended that
these pins be directly connected to a DC source
greater than the snap-back votlage (VSB) as the device
can latch on as described below.
EPD TVS Characteristics
These devices are constructed using Semtech’s
proprietary EPD technology. By utilizing the EPD tech-
nology, the RClamp2504N and RClamp3304N can
effectively operate at 2.5V and 3.3V respectively while
maintaining excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. Since the EPD
TVS devices use a 4-layer structure, they exhibit a
slightly different IV characteristic curve when compared
to conventional devices. During normal operation, the
device represents a high-impedance to the circuit up to
the device working voltage (VRWM). During an ESD
event, the device will begin to conduct and will enter a
low impedance state when the punch through voltage
(VPT) is exceeded. Unlike a conventional device, the low
voltage TVS will exhibit a slight negative resistance
characteristic as it conducts current. This characteris-
tic aids in lowering the clamping voltage of the device,
but must be considered in applications where DC
voltages are present.
When the TVS is conducting current, it will exhibit a
slight “snap-back” or negative resistance
characteristics due to its structure. This point is
defined on the curve by the snap-back voltage (VSB)
and snap-back current (ISB). To return to a non-
conducting state, the current through the device must
fall below the ISB (approximately <50mA) and the
voltage must fall below the VSB (normally 2.8 volts for a
3.3V device). If a 3.3V TVS is connected to 3.3V DC
source, it will never fall below the snap-back voltage of
2.8V and will therefore stay in a conducting state.
7
2008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
RClamp2504N & RClamp3304N
Applications Information
RClamp2504N
12
RClamp2504N
12
RClamp2504N
12
RClamp2504N
12
RClamp2504N
12
RClamp2504N
12
RClamp2504N
12
RClamp2504N
12
RClamp2504N
12
RClamp2504N
12
RClamp2504N
12
RClamp2504N
12
Gigabit
Ethernet
Transceiver
Schematic Diagram for Gigabit Ethernet Telcordia GR-1089 Intra-Building Protection
(PHY Operating Temp <= 90°C)
RClamp2504N
RClamp2504N
2
1
3
6
8
4
5
7
9
10
2
1
3
6
8
4
5
7
9
10
Schematic Diagram for Gigabit Ethernet ESD Protection
82008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
RClamp2504N & RClamp3304N
RClamp2504N Spice Model
sretemaraPecipSN4052pmalCR
retemaraPtinU)DRCL(1D)DRCL(2D)SVT(3D
SIpmA02-E102-E131-E66.1
VBtloV00100198.2
JVtloV36.095.035.0
SRmhO831.0142.060.0
VBIpmA3-E13-E13-E1
OJCdaraF21-E5.121-E5.121-E882
TTces9-E145.29-E145.29-E145.2
M--10.010.071.0
N--1.11.11.1
GEVe11.111.111.1
Applications Information - Spice Model
9
2008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
RClamp2504N & RClamp3304N
Applications Information - Spice Model
RClamp3304N Spice Model
sretemaraPecipSN4033pmalCR
retemaraPtinU)DRCL(1D)DRCL(2D)SVT(3D
SIpmA02-E102-E131-E66.1
VBtloV00100155.3
JVtloV26.095.06.0
SRmhO831.0142.0281.0
VBIpmA3-E13-E13-E1
OJCdaraF21-E5.121-E5.121-E352
TTces9-E145.29-E145.29-E145.2
M--10.010.0502.0
N--1.11.11.1
GEVe11.111.111.1
102008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
RClamp2504N & RClamp3304N
Outline Drawing - SLP2626P10
Land Pattern - SLP2626P10
2.252.00
2.60.102
.079 .089
D
aaa C
C
L
C
L
E
PIN 1
INDICATOR
(LASER MARK)
AB
A1
SEATING
PLANE
C
E/2
bbb C A B
N
e
A
bxN
D/2
LxN
D1
E1
D
.102E 2.60
12
A2
2.702.50
2.50 2.70
.106.098
.106.098
INCHES
.020 BSC
b.007
bbb
aaa
N
E1
L
e
D1
.011
.044
DIM
A1
A2
A
MIN
.000
.020
0.300.20.012 0.25.010
0.40
1.36
0.30
1.11
.004
.003
10
.014
.085
.050
.016
.054
0.08
0.10
10
0.35
2.15
1.26
0.50 BSC
MILLIMETERS
MAX
0.05
0.65
DIMENSIONS
MIN
0.00
NOM
(.007)
.024
.001
MAX
.002
.026
NOM
0.50
0.03
(0.17)
0.60
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.
NOTES:
2.
1.
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
NOTES:
1.
DIM
X
Y
P
F
MILLIMETERSINCHES
1.26
.012
.025
.020
.050
0.30
0.65
0.50
DIMENSIONS
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
3.15.124Z
B .081 2.05
X
B
Y
G
ZG.073 1.85
P
(C)
F
C .100 2.50
11
2008 Semtech Corp. www.semtech.com
PROTECTION PRODUCTS
RClamp2504N & RClamp3304N
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Rd., Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
Ordering Information
Tape and Reel Specification
RailClamp and RClamp are marks of Semtech Corporation
Marking
Device Orientation in Tape
epaT
htdiW )xaM(,BD1DE F
K
)XAM( P0P2P)XAM(TW
mm8 mm2.4
)561.(
mm1.0+5.1
mm0.0-
mm0.1
50.0±
01.±057.1
mm 50.0±5.3
mm mm4.2 1.0±0.4
mm
1.0±0.4
mm
50.0±0.2
mm mm4.0
mm0.8
mm3.0+
mm1.0-
0A0B0K
mm50.0-/+77.2mm50.0-/+77.2mm50.0-/+08.0
Pin 1 Location
User Direction of feed
2504N
YYWW
YYWW = Date Code
3304N
YYWW
RClamp2504N RClamp3304N
rebmuNtraP gnikroW
egatloV
repytQ
leeR eziSleeR
TCT.N4052pmalCRstloV5.2000,3hcnI7
TCT.N4033pmalCRstloV3.3000,3hcnI7