LM136A-2.5QML, LM136A-2.5QML-SP www.ti.com SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 LM136A-2.5QML 2.5V Reference Diode Check for Samples: LM136A-2.5QML, LM136A-2.5QML-SP FEATURES DESCRIPTION * The LM136A-2.5QML integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference operates as a low-temperature-coefficient 2.5V zener with 0.2 dynamic impedance. A third terminal on the LM136A-2.5QML allows the reference voltage and temperature coefficient to be trimmed easily. 1 2 * * * * * * Available with Radiation Specification - Total Ionizing Dose 100 krad(Si) - ELDRS Free 100 krad(Si) Low Temperature Coefficient Wide Operating Current of 400 A to 10 mA Specified Temperature Stability Easily Trimmed for Minimum Temperature Drift Fast Turn-on 3-Lead Transistor Package The LM136A-2.5QML is useful as a precision 2.5V low voltage reference for digital voltmeters, power supplies or op amp circuitry. The 2.5V make it convenient to obtain a stable reference from 5V logic supplies. Further, since the LM136A-2.5QML operates as a shunt regulator, it can be used as either a positive or negative voltage reference. Connection Diagram Bottom View Figure 1. TO Package See Package Number NDV0003H 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2007-2013, Texas Instruments Incorporated LM136A-2.5QML, LM136A-2.5QML-SP SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 www.ti.com Schematic Diagram Typical Applications Figure 2. 2.5V Reference Adjust to 2.490V Any silicon signal diode * Figure 3. 2.5V Reference with Minimum Temperature Coefficient 2 Submit Documentation Feedback Copyright (c) 2007-2013, Texas Instruments Incorporated Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP LM136A-2.5QML, LM136A-2.5QML-SP www.ti.com SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 Figure 4. Wide Input Range Reference These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Copyright (c) 2007-2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP 3 LM136A-2.5QML, LM136A-2.5QML-SP SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 www.ti.com Absolute Maximum Ratings (1) Reverse Current 15 mA Forward Current 10 mA -60C TA +150C Storage Temperature Operating Temperature Range (2) Maximum Junction Temperature (TJ) -55C TA +125C (2) +150C Lead Temperature (Soldering 10 seconds) 300C JA Thermal Resistance Still Air Flow 354C/W 500LF/Min Air Flow 77C/W JC 46C/W ESD Rating (3) (1) (2) (3) 1,000V Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), JA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/JA or the number given in the Absolute Maximum Ratings, whichever is lower. Human body model, 1.5K in series with 100pF. Quality Conformance Inspection Mil-Std-883, Method 5005 - Group A 4 Subgroup Description 1 Static tests at TempC +25 2 Static tests at +125 3 Static tests at -55 4 Dynamic tests at +25 5 Dynamic tests at +125 6 Dynamic tests at -55 7 Functional tests at +25 8A Functional tests at +125 8B Functional tests at -55 9 Switching tests at +25 10 Switching tests at +125 11 Switching tests at -55 12 Settling time at +25 13 Settling time at +125 14 Settling time at -55 Submit Documentation Feedback Copyright (c) 2007-2013, Texas Instruments Incorporated Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP LM136A-2.5QML, LM136A-2.5QML-SP www.ti.com SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 LM136A-2.5QML Electrical Characteristics DC Parameters (1) (2) The following conditions apply, unless otherwise specified. Parameter IAdj Test Conditions Adjust Current VZ IR = 1mA Notes VAdj = 0.7V VAdj = Open Zener Voltage VAdj = 0.7V VAdj = 1.9V ZRD Reverse Dynamic Impedance VStab Temperature Stability (1) (2) (3) Subgroups +125 A 1, 2, 3 6.0 mV 1 10 mV 2, 3 2.46 5 2.51 5 V 1 2.44 2.54 V 2, 3 2.39 2.49 V 1 2.29 2.49 V 2, 3 2.49 Max -125 0.4mA IZ 10 mA Delta Zener Voltage VZ Unit Min 2.69 V 1, 2, 3 See (3) 0.6 1 (3) 1.0 2, 3 18 mV 2, 3 See VZ = Adjusted to 2.490V Pre and post irradiation limits are identical to those listed under DC electrical characteristics. These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are specified only for the conditions as specified in Mil-Std-883, Method 1019. Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS) effect. Parameter tested go-no-go only. LM136A-2.5QML Electrical Characteristics DC Drift Parameters (1) (2) Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only. Parameter VZ (1) (2) Min Max Unit Subgroups VAdj = Open -10 +10 mV 1 VAdj = 0.7V -10 +10 mV 1 VAdj = 1.9V -10 +10 mV 1 Test Conditions Zener Voltage Notes Pre and post irradiation limits are identical to those listed under DC electrical characteristics. These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are specified only for the conditions as specified in Mil-Std-883, Method 1019. Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS) effect. Copyright (c) 2007-2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP 5 LM136A-2.5QML, LM136A-2.5QML-SP SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 www.ti.com Typical Performance Characteristics 6 Reverse Voltage Change Zener Noise Voltage Figure 5. Figure 6. Dynamic Impedance Response Time Figure 7. Figure 8. Reverse Characteristics Forward Characteristics Figure 9. Figure 10. Submit Documentation Feedback Copyright (c) 2007-2013, Texas Instruments Incorporated Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP LM136A-2.5QML, LM136A-2.5QML-SP www.ti.com SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 Typical Performance Characteristics (continued) Temperature Drift Figure 11. Copyright (c) 2007-2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP 7 LM136A-2.5QML, LM136A-2.5QML-SP SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 www.ti.com APPLICATION HINTS The LM136 voltage reference is much easier to use than ordinary zener diodes. It's low impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the temperature coefficient can be adjusted to optimize circuit performance. Figure 12 shows an LM136 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device. The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer circuitry. If minimum temperature coefficient is desired, two diodes can be added in series with the adjustment potentiometer as shown in Figure 13. When the device is adjusted to 2.490V the temperature coefficient is minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457. For proper temperature compensation the diodes should be in the same thermal environment as the LM136. It is usually sufficient to mount the diodes near the LM136 on the printed circuit board. The absolute resistance of R1 is not critical and any value from 2k to 20k will work. Figure 12. LM136 With Pot for Adjustment of Breakdown Voltage (Trim Range = 120 mV typical) Figure 13. Temperature Coefficient Adjustment (Trim Range = 70 mV typical) 8 Submit Documentation Feedback Copyright (c) 2007-2013, Texas Instruments Incorporated Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP LM136A-2.5QML, LM136A-2.5QML-SP www.ti.com SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 * L1 60 turns #16 wire on Arnold Core A-254168-2 Efficiency 80% Figure 14. Low Cost 2 Amp Switching Regulator Figure 15. Precision Power Regulator with Low Temperature Coefficient Figure 16. 5V Crowbar Copyright (c) 2007-2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP 9 LM136A-2.5QML, LM136A-2.5QML-SP SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 www.ti.com * Does not affect temperature coefficient Figure 17. Trimmed 2.5V Reference with Temperature Coefficient Independent of Breakdown Voltage Figure 18. Adjustable Shunt Regulator Figure 19. Linear Ohmmeter 10 Submit Documentation Feedback Copyright (c) 2007-2013, Texas Instruments Incorporated Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP LM136A-2.5QML, LM136A-2.5QML-SP www.ti.com SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 Figure 20. Op Amp with Output Clamped Figure 21. Bipolar Output Reference Figure 22. 2.5V Square Wave Calibrator Copyright (c) 2007-2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP 11 LM136A-2.5QML, LM136A-2.5QML-SP SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 www.ti.com Figure 23. 5V Buffered Reference Figure 24. Low Noise Buffered Reference 12 Submit Documentation Feedback Copyright (c) 2007-2013, Texas Instruments Incorporated Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP LM136A-2.5QML, LM136A-2.5QML-SP www.ti.com SNOSAM3E - JULY 2007 - REVISED APPRIL 2013 REVISION HISTORY Date Released Revision 07/06/07 A New Release, Corporate format Section 2 MDS datasheets converted into one corporate datasheet format. MNLM136-2.5-X Rev 0A0 and MNLM136A-2.5-X-RH. The ELDRS Part has also been added. Rev. 0E0 will be archived. Changes 10/16/2010 B Data Sheet Title, General Description, Order Information, Electrical Characteristics, Application Hints Update with current device information and format. Removed all references to the LM136-2.5 Non "A" package NSID no longer offered. Added Die NSID's to data sheet. Revision A will be Archived. Changes from Revision D (April 2013) to Revision E * Page Changed layout of National Data Sheet to TI format .......................................................................................................... 12 Copyright (c) 2007-2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: LM136A-2.5QML LM136A-2.5QML-SP 13 PACKAGE OPTION ADDENDUM www.ti.com 17-Jul-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (C) (3) Device Marking (4/5) 5962R0050101V9A ACTIVE DIESALE Y 0 40 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 5962R0050101VXA ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 5962R0050102V9A ACTIVE DIESALE Y 0 40 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 5962R0050102VXA ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 LM136-2.5 MDE ACTIVE DIESALE Y 0 40 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 LM136-2.5 MDR ACTIVE DIESALE Y 0 40 Green (RoHS & no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125 LM136AH-2.5/883 ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 LM136A-2.5 Q LM136AH-2.5RLQV ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 R0050102VXA Q LM136AH-2.5RQV ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 R0050101VXA Q R0050101VXA Q R0050102VXA Q (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com (4) 17-Jul-2013 There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. 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OTHER QUALIFIED VERSIONS OF LM136A-2.5QML, LM136A-2.5QML-SP : * Military: LM136A-2.5QML * Space: LM136A-2.5QML-SP NOTE: Qualified Version Definitions: * Military - QML certified for Military and Defense Applications * Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application Addendum-Page 2 MECHANICAL DATA NDV0003H H03H (Rev F) www.ti.com IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as "components") are sold subject to TI's terms and conditions of sale supplied at the time of order acknowledgment. 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