LM136A-2.5QML, LM136A-2.5QML-SP
www.ti.com
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
LM136A-2.5QML 2.5V Reference Diode
Check for Samples: LM136A-2.5QML,LM136A-2.5QML-SP
1FEATURES DESCRIPTION
The LM136A-2.5QML integrated circuit is a precision
2• Available with Radiation Specification 2.5V shunt regulator diode. This monolithic IC voltage
– Total Ionizing Dose 100 krad(Si) reference operates as a low-temperature-coefficient
– ELDRS Free 100 krad(Si) 2.5V zener with 0.2Ωdynamic impedance. A third
terminal on the LM136A-2.5QML allows the reference
• Low Temperature Coefficient voltage and temperature coefficient to be trimmed
• Wide Operating Current of 400 μA to 10 mA easily.
• Specified Temperature Stability The LM136A-2.5QML is useful as a precision 2.5V
• Easily Trimmed for Minimum Temperature Drift low voltage reference for digital voltmeters, power
• Fast Turn-on supplies or op amp circuitry. The 2.5V make it
convenient to obtain a stable reference from 5V logic
• 3–Lead Transistor Package supplies. Further, since the LM136A-2.5QML
operates as a shunt regulator, it can be used as
either a positive or negative voltage reference.
Connection Diagram
Bottom View
Figure 1. TO Package
See Package Number NDV0003H
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2007–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM136A-2.5QML, LM136A-2.5QML-SP
SNOSAM3E –JULY 2007–REVISED APPRIL 2013
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Schematic Diagram
Typical Applications
Figure 2. 2.5V Reference
†Adjust to 2.490V
*Any silicon signal diode
Figure 3. 2.5V Reference with Minimum
Temperature Coefficient
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Figure 4. Wide Input Range Reference
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Absolute Maximum Ratings(1)
Reverse Current 15 mA
Forward Current 10 mA
Storage Temperature −60°C ≤TA≤+150°C
Operating Temperature Range(2) −55°C ≤TA≤+125°C
Maximum Junction Temperature (TJ)(2) +150°C
Lead Temperature (Soldering 10 seconds) 300°C
Thermal Resistance θJA Still Air Flow 354°C/W
500LF/Min Air Flow 77°C/W
θJC 46°C/W
ESD Rating(3) 1,000V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
(3) Human body model, 1.5KΩin series with 100pF.
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup Description Temp°C
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
12 Settling time at +25
13 Settling time at +125
14 Settling time at -55
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SNOSAM3E –JULY 2007–REVISED APPRIL 2013
LM136A-2.5QML Electrical Characteristics DC Parameters(1)(2)
The following conditions apply, unless otherwise specified. IR= 1mA Sub-
Parameter Test Conditions Notes Min Max Unit groups
IAdj Adjust Current VAdj = 0.7V -125 +125 µA 1, 2, 3
ΔVZ6.0 mV 1
Delta Zener Voltage 0.4mA ≤IZ≤10 mA 10 mV 2, 3
2.46 2.51 V 1
5 5
VAdj = Open 2.44 2.54 V 2, 3
VZZener Voltage 2.39 2.49 V 1
VAdj = 0.7V 2.29 2.49 V 2, 3
VAdj = 1.9V 2.49 2.69 V 1, 2, 3
See(3) 0.6 Ω1
ZRD Reverse Dynamic Impedance See(3) 1.0 Ω2, 3
VStab Temperature Stability VZ= Adjusted to 2.490V 18 mV 2, 3
(1) Pre and post irradiation limits are identical to those listed under DC electrical characteristics. These parts may be dose rate sensitive in
a space environment and may demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are
specified only for the conditions as specified in Mil-Std-883, Method 1019.
(2) Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no
enhanced low dose rate sensitivity (ELDRS) effect.
(3) Parameter tested go-no-go only.
LM136A-2.5QML Electrical Characteristics DC Drift Parameters(1)(2)
Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only. Sub-
Parameter Test Conditions Notes Min Max Unit groups
VAdj = Open −10 +10 mV 1
VZZener Voltage VAdj = 0.7V −10 +10 mV 1
VAdj = 1.9V −10 +10 mV 1
(1) Pre and post irradiation limits are identical to those listed under DC electrical characteristics. These parts may be dose rate sensitive in
a space environment and may demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are
specified only for the conditions as specified in Mil-Std-883, Method 1019.
(2) Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no
enhanced low dose rate sensitivity (ELDRS) effect.
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Typical Performance Characteristics
Reverse Voltage Change Zener Noise Voltage
Figure 5. Figure 6.
Dynamic Impedance Response Time
Figure 7. Figure 8.
Reverse Characteristics Forward Characteristics
Figure 9. Figure 10.
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APPLICATION HINTS
The LM136 voltage reference is much easier to use than ordinary zener diodes. It's low impedance and wide
operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the
temperature coefficient can be adjusted to optimize circuit performance.
Figure 12 shows an LM136 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the
addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device.
The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer
circuitry.
If minimum temperature coefficient is desired, two diodes can be added in series with the adjustment
potentiometer as shown in Figure 13. When the device is adjusted to 2.490V the temperature coefficient is
minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457.
For proper temperature compensation the diodes should be in the same thermal environment as the LM136. It is
usually sufficient to mount the diodes near the LM136 on the printed circuit board. The absolute resistance of R1
is not critical and any value from 2k to 20k will work.
Figure 12. LM136 With Pot for Adjustment
of Breakdown Voltage
(Trim Range = ±120 mV typical)
Figure 13. Temperature Coefficient Adjustment
(Trim Range = ±70 mV typical)
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SNOSAM3E –JULY 2007–REVISED APPRIL 2013
*L1 60 turns #16 wire on Arnold Core A-254168-2
†Efficiency ≈80%
Figure 14. Low Cost 2 Amp Switching Regulator†
Figure 15. Precision Power Regulator with Low Temperature Coefficient
Figure 16. 5V Crowbar
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*Does not affect temperature coefficient
Figure 17. Trimmed 2.5V Reference with
Temperature Coefficient Independent
of Breakdown Voltage
Figure 18. Adjustable Shunt Regulator
Figure 19. Linear Ohmmeter
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SNOSAM3E –JULY 2007–REVISED APPRIL 2013
Figure 20. Op Amp with Output Clamped
Figure 21. Bipolar Output Reference
Figure 22. 2.5V Square Wave Calibrator
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SNOSAM3E –JULY 2007–REVISED APPRIL 2013
REVISION HISTORY
Date Released Revision Section Changes
07/06/07 A New Release, Corporate format 2 MDS datasheets converted into one corporate
datasheet format. MNLM136–2.5–X Rev 0A0 and
MNLM136A-2.5–X-RH. The ELDRS Part has also
been added. Rev. 0E0 will be archived.
10/16/2010 B Data Sheet Title, General Description, Order Update with current device information and format.
Information, Electrical Characteristics, Removed all references to the LM136-2.5 Non “A”
Application Hints package NSID no longer offered. Added Die NSID's to
data sheet. Revision A will be Archived.
Changes from Revision D (April 2013) to Revision E Page
• Changed layout of National Data Sheet to TI format .......................................................................................................... 12
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PACKAGE OPTION ADDENDUM
www.ti.com 17-Jul-2013
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
5962R0050101V9A ACTIVE DIESALE Y 0 40 Green (RoHS
& no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125
5962R0050101VXA ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 R0050101VXA Q
5962R0050102V9A ACTIVE DIESALE Y 0 40 Green (RoHS
& no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125
5962R0050102VXA ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 R0050102VXA Q
LM136-2.5 MDE ACTIVE DIESALE Y 0 40 Green (RoHS
& no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125
LM136-2.5 MDR ACTIVE DIESALE Y 0 40 Green (RoHS
& no Sb/Br) Call TI Level-1-NA-UNLIM -55 to 125
LM136AH-2.5/883 ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 LM136A-2.5 Q
LM136AH-2.5RLQV ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 R0050102VXA Q
LM136AH-2.5RQV ACTIVE TO NDV 3 20 TBD Call TI Call TI -55 to 125 R0050101VXA Q
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
PACKAGE OPTION ADDENDUM
www.ti.com 17-Jul-2013
Addendum-Page 2
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LM136A-2.5QML, LM136A-2.5QML-SP :
•Military: LM136A-2.5QML
•Space: LM136A-2.5QML-SP
NOTE: Qualified Version Definitions:
•Military - QML certified for Military and Defense Applications
•Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application
MECHANICAL DATA
NDV0003H
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H03H (Rev F)
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