©2007 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
BC847BS Rev. A
BC847BS
June 2007
BC847BS
NPN Multi-chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 200 mA.
Sourced from Process 07.
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or lo w duty cycle operatio ns.
Thermal Characteristics * Ta = 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCES Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current (DC) 100 mA
TJ, TSTG Junction Temperature and Storage Temperature -55 ~ +150 °C
Symbol Characteristic Max Units
PDTotal Device Dissipation
Derate above 25℃
210
1.6 mW
mW/℃
RθJA Thermal Resistance, Junction to Ambient 625 ℃/W
C1 B2
E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
Pin #1 B1
C2
E2
SC70-6
Mark: .1F
Dual NPN Signal Transister
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BC847BS Rev. A
BC847BS
Electrical Characteristics * Ta = 25°C unless otherwise not ed
Off Characteristics
On Characteristics
* Pulse Test: Pulse Widt h≤300μs, Duty Cycle≤2%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Symbol Parameter Test Condition MIN MAX Units
V(BR)CBO Collector-Emitter Breakdown Voltage IC = 10 μA, IE = 0 50 V
V(BR)CES Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 50 V
V(BR)CEO Collector-Base Breakdown Voltage IC = 10 mA, IB = 0 45 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V
ICBO Collector-Cutoff Current VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150°C15
5.0 nA
μA
hFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V 200 450
VCE(sat)Collector-Emitter Saturation Voltage *IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA 0.25
0.65 V
V
VBE(on)Emitter-Base Breakdown Voltage * IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V 0.58 0.7
0.77 V
V
tm
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are regis tered and unr egister ed tradema rks Fairchild Semiconduc tor owns or is authorized to use an d is not int ended to
be an exhaustive list of all such trademarks.
BC847BS
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OU T OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions fo r use provided in the labeling, can be reaso nably expecte d
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be re asonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains prelim inary data, and
supplementary data will be published at a lat er date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identifica tion Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time withou t notice in order to im prove design.
Obsolete Not In Production This datasheet contains specifications on a produc t
that has been discontinued by Fair child semiconductor.
The datasheet is printed for reference information only.
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Rev. I23
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BC847BS Rev. A
BC847BS
