SCR C144 The General Electric C144 Silicon Controlled Rectifier is a reverse blocking triode thyristor semiconductor device designed primarily for high-frequency power switching applications which requires blocking voltages from 500 to 800 volts and load currents up to 35 amperes RMS, at frequencies up to 10 kHz. The C144 is characterized for rectangular and sine wave operation. The C144 utilizes a new voltage rating system which allows high voltage blocking capability while approaching the short turn-off time characteristics of a low blocking voltage SCR. Equipment designers can use the C144 SCR in demanding applications such as: choppers, inverters, regulated power supplies, cycloconverters, ultrasonic generators, high frequency lighting, induction heaters, radar and sonar transmitters, laser pulsers, pulse modulators. MAXIMUM ALLOWABLE RATINGS C144E15E, C144E30E 500 Volts 500 Volts 500 Volts 600 Volts C144M15M, C144M30M 600 600 600 720 C144S15M, C144S30M 700 600 700 840 C144N15M, C144N30M 800 600 800 1000 RMS On-State Current, It(RMs) - 6 6 ee ee ee we ee ee ~~ 35 Amperes (all conduction angles) Critical Rate-of-Rise of On-State Current, di/dt: (5) Gate triggered operation: Switching from 500 volts (500 volt types). 2 2. 1 1 ee ee ee ee ew ew we we ee ~~ LOO Amperes per microsecond Switching from 600 voits (600, 700, 800 volt types) 2. 2... 1 2 ee ee eee ew ee ~~ 100 Amperes per microsecond Peak One Cycle Surge (non-rep) On-State Current, Itsy. . oe : . Ce ee ee ee ee we we ee ~~ 250 Amperes Peak Rectangular Pulse Surge (non-rep) On-State Current (5, 0 Msec, t= =5 Ouisec) Irsm. Cee ee ee ee ee ew ee ew oe ee 225 Amperes 12t (for fusing), for times 20.5 milliseconds . 2... ww ee et ee ee ee we ew ee eee ee 165 Ampere? seconds Peak Gate Power Dissipation, Payy . - 6 6 ee ee ee ee ee ee ee ee + 40 Watts for 100 Microseconds Average Gate Power Dissipation, Pg (av) 6 1 6 ee te ee ee ee ee ww + 10 Watts Peak Negative Gate Voltage, Vey. 6 0 ee ee ee ee ee eee ee 10 Volts Storage Temperature, Tstp 6-0 6 tt ee ee ee 6SC to +150C Operating Temperature, Ty 6 1 we ee ee eee ee we HOSE to +125C Maximum Stud Torque . 2... 1 ee ee ee ew ee ee ee ee te ee ee ee ew 30 Lb-in (35 Kg-cm) 791State Current (2)(6) Peak Reverse and Off- CHARACTERISTICS 3.5 4.6 3.9 3.3 mA Te = 65C to +125C Verm = Voeam = 500 Volts Peak 600 7 700 7 goo Critical Rate of Rise of Off-State Voltage Volts/ psec Tc = 125C, Rated Vorm, Gate Open Circuited, Exponential Waveform D.C. Gate Trigger Current 150 400 mAdc Te = 25C, Vp = 6Vdc, R, = 4 ohms Te = -65, Vp = 6Vde, Ry = 2 ohms D.C. Gate Trigger Voltage 0.25 3.0 4.5 Te = 25, Vp = 6 Voits, Ry. = 4 ohms Te = -65C, Vp = 6 Volts, Ry = 2 ohms Te = 125C, Rated Vorm, Ry = 500 ohms Peak On-State Voltage 3.0 Volts Te = 25, Ipm = 100 A Peak, 2 1, $2 msec. wide pulse. Duty cycle S$ 2%. Holding Current 125 325 mAdc Anode Source Voltage = 24 Vdc. Peak Initiating On-State Current = 3A, 0.1 to 10 msec pulse. Tg = 25C, Gate source = 10V, Open Circuit, 20 ohms, 100 psec pulse T. = 65C, Gate source = 20V, Open Circuit, 20 ohms, 100 usec pulse. Pulse Circuit Commutated Turn- Off Time C144-15- Types C144-30- Types q (pulse) 15 30 psec psec Te = LIS, I+ = 100A Peak. Approxi- mately Sinusoidal Current Waveform. See Chart II for time references, On- State Current Pulse Time to peak (t2 t,) =7.5 psec. On-State Current Pulse Base (t3t,) = 15. usec (+1.5-0 psec). Repetition Rate = 400 PPS. PRV (ts) = 500 Volts max. Reverse Voltage (tg) = 30 Volts, Peak Off-State Voltage (tg) = Rated Vorm. Peak Off-State Voltage (to) equals: 500 Volts for 500 Volt types; 600 Volts for 600, 700 and 800 Volt types. Rate of Rise of Re-applied Off-State Voltage (Linear Ramp): (tg to tg) = 200 Volts per psec. Gate Trigger Pulse = 20 Volts, 20 ohms. Gate Trigger Pulse Width (90% points) = 1.5 psec. Gate Trigger Pulse Rise Time (10% to 90%) = 0.1 usec. Gate Bias during Turn- Off Time interval = 0 Volts, 20 ohms. 792CHARACTERISTICS (Contd) Steady State RGuc 1.0 C/ Junction to Case Thermal Resistance Watt ; Conventional Circuit ta Tc = 125 Ipm = 10A Peak Rectangular Commutated Turn- Current Pulse, 50 usec duration. DI/DT Off Time < 10 Amps per microsecond, Commuta- tion Rate < 5A per psec. PRV = Rated Verm Volts max. Reverse Voltage at C144-15- Types 15 psec end of Turn-Off Time interval = 15 volts. Repetition Rate = 60 PPS. Rate of Ci44-30- Types 30 psec Rise of Re-applied Off-State Voltage (dv/dt) = 200V/psec. Off-State Voltage = Rated Vogm Volts. Gate Bias during Turn-Off Time interval = 0 Volts, 100 ohms. NOTES: (1) Type designations are defined as follows, using C144N30M as an example: C 144 N 30 M | | _Ratea Switching Voltage Maximum Turn-Off Time (30 = 30 psec; 15 = 15 sec) Rated Repetitive Peak Off-State and Reverse Voltage (2) Values apply for gate terminal open circuited, (Negative gate bias is permissible), (3) Maximum case to ambient thermal resistance for which maximum voltage ratings apply equals 3.0C degrees per watt for Vp (DC voltage), 5.0C degrees per watt for Vor, and Varo. See paragraph, Basis for Voltage Rating for further information. (4) Half sine wave voltage pulse, 10 millisecond max. duration, (5) di/dt rating is established in accordance with JEDEC Suggested Standard No. 7, Section 5.1.2.4 Off State (blocking) voltage capability may be temporarily lost immediately after each current pulse for duration less than the period of the applied pulse repetition rate, The pulse repetition rate for this test is 400 Hz. The duration of the JEDEC di/dt test condition is 5.0 seconds (minimum). Required gate drive = 20 volts, open circuit, 20 ohm source, 0,1 microsecond rise time, 1.5 microsecond pulse width, Repetitive di/dt capability is incorporated into peak current rating charts included in this specification sheet. (6) Maximum case to ambient thermal resistance for which maximum Vprmy and Varn fatings apply equals 5.0 degrees C per watt, See paragraph entitled Basis of Voltage Ratings, for further information. PRELIMINARY DATA These ratings and characteristics are not necessarily definitive and are based only on the tests and findings made to date. Inasmuch as further information may be acquired, General Electric Company reserves the right to change these preliminary data without notice, Please contact your local General Electric Electronic Component Sales Manager for the latest status of data prior to ordering devices to the limits indicated by the. data, 793BASIS OF VOLTAGE RATINGS For The C144 Thyristor The C144 Thyristor is characterized for both inverter service and phase controlled service. Voltage ratings are given applicable to both types of service. For inverter service, the off-state and reverse voltage ratings are based on the waveform shown below: uJ EO HE 800 Ud 600 / PERMISSIBLE SWITCHING us > 500 1 VOLTAGE LEVELS 0 uJ No 500 Ce 600 ir 300 ais > - | PERCENT OF 5 100 + CYCLE (IOHz TO 10 KHz) ONE CYCLE OF APPLIED VOLTAGE This waveform requires the use of a device case to ambient thermal resistance of 3.0 deg C per watt in order to assure thermal stability under maximum rated voltage and temperature conditions. The waveforms of the actual application must stay within the envelope shown for each voltage type. If the actual wave- forms do not stay within the envelopes shown for each voltage type then a heat sink with less than 3.0 deg C per watt must be used. Consult factory for assistance in heat sink selection to assure thermal stability. For phase controlled service, sinusoidal voltage waveform is assumed. A device case to ambient thermal resistance of 5.0 deg C per watt maximum is required to assure thermal stability at maximum rated voltage and temperature conditions. It should be noted that the above thermal stability criteria apply even when no on-state conduction losses are present. OUTLINE DRAWING (COMPLIES WITH JEDEC TO-48) NOTES: 1. Complete threads to extend to within 2% threads of seating plane. Diameter of unthreaded SYMBOL portion .249 (6.32MM) Maxi- A mum, .220 (5.59MM) Minimum. 2. Angular orientation of these ot ob terminals is undefined. &, 3. %4-28 UNF-2A. Maximum pitch $b, @ diameter of plated threads shall INCHES MIN. MAX. .330 505 MILLIMETERS MIN. MAX, 8.38 | 12.83 115 140} 2.92 56 2 210 .300 | 5.33 | 7.62 544 13.82 NOTES w SEE NOTES 2S > Om NN OW Ext. be basic pitch diameter .2268 (5.76MM), minimum pitch diam- eter .2225 (5.66MM), reference: screw thread standards for Fed- eral Service 1957, Handbook H28, 1957, P1. . A chamfer (or undercut) on one or both ends of hexagonal por- tions is optional. . Case is anode connection. . Large terminal is cathode con- nection. . Small terminal is gate connec- tion. . Insulating kit available upon re- quest. . %-28 steelnut, Ni. plated, .178 min. thk. tooth lockwasher, steel ,Ni. plated, .023 min. thk. 3485 4 iy. ET SEE NOTES - w fifi FLAG) Fb T $M J XN > SEATING PLANE a te A Ps 2 86 2 e J} | H 794 SEE NOTES & GA 944 562 13.82 | 14.27 -113 | .200 2.87 | 5.08 060 1.52 193 30.30 875 22.23 120 3.05 422 -453 10.72 4 11.51 .060 | .075 1.52 1.91 125 165 3.18 | 4.19INSTANTANEOUS ON-STATE CURRENT-AMPERES 130 | RESISTIVE OR INDUCTIVE LOAD, 50 JUNCTION TEMP. = 25C TO 400 Hz. 120 ~< 2.CURVES APPLY FOR ANODE CURRENT 9 RN RATE OF RISE = 10 AMPERES PER | Ho MICROSECOND. Ww N WS 3, RATINGS DERIVED FOR 1.0 WATT L AVERAGE GATE POWER DISSIPATION. = 100 SON 4.5C PER WATT MAXIMUM THERMAL a \K\YAAAL PS RESISTANCE, CASE TO AMBIENT. ui 90 = J a \ - 80 \ X X \ a % 70 \ \ AN PS mS a CONDUCTION | : ) ut 60 NGLE= 30} | 60] 90| 120) gos Ke NOTE: a WAVEFORM WITH RISE TIME q | ZERO TO PEAK, 2 100,SEC. z 50 oc 3 az 40h = = 30 x 2 20+ 180 '0 F conpuction 0 ANGLE 0 0 5 10 15 20 25 30 35 40 2 8 8 0 (2 '4 AVERAGE ON-STATE CURRENT - AMPERES 1 MAXIMUM ON.STATE 2. MAXIMUM ALLOWABLE CASE TEMPERATURE VS. . ON-STATE CURRENT FOR SINUSOIDAL CURRENT CHARACTERISTICS WAVEFORM 100 NOTES: I], JUNCTION TEMPERATURE = 125C. 2. FREQUENCY = 50 TO 400 Hz 80 T 3. CURVES APPLY FOR ANODE CURRENT RATE OF RISE = 10 AMPERES PER MICROSECOND. a 180 a roy 60 A LL CONDUCTION ANGLE =30 oe 180 N 60 40 20 oo CONDUCTION ANGLE { 0 5 10 15 20 25 30 35 40 AVERAGE ON-STATE CURRENT - AMPERES . MAXIMUM AVERAGE POWER DISSIPATION FOR SINUSOIDAL CURRENT WAVEFORM NOTES: |, APPLIES FOR ANODE CURRENT RATE OF RISE OF 10 AMPS PER MICROSECOND. . MAXIMUM CIRCUIT dv/dt = 200 VOLTS PER ,wSEC. . SEE CHART 10 FOR APPLICABLE TURN-OFF TIME LIMIT. . RATINGS DERIVED FOR LO WATT AVERAGE GATE POWER DISSIPATION. . CASE TO AMBIENT THERMAL RESISTANCE. REQUIRE~ 120 MENTS FOR THERMAL STABILITY MUST BE MET. SEE eee ENTITLED "BASIS OF VOLTAGE RATINGS." i, ou Ty cy, GO AVERAGE ON-STATE POWER DISSIPATION - WATTS wo 3 NX \ W \ 140 on AGN ff oO e ' WwW e 2 - <q x Wl $ # 100 This chart is used when w the SCR is carrying rec- a tangular current with 80 no significant turn-on z switching duty. P- = 60 fo} a =z 40b - T = 207 100 4 _ tx $ % DUTY CYCLE = == ! \ i oO io 20 30 40 50 60 70 80 90 00 lO 120 PEAK ON-STATE CURRENT ~ AMPERES MAXIMUM ALLOWABLE CASE TEMPERATURE VS. ON- STATE CURRENT FOR RECTANGULAR WAVEFORM 795 >CONVENTIONAL CKT. TIME-SEC. COMMUTATED TURN OFF- PEAK ON-STATE CURRENT - AMPERES 70 60 ES NOTES: |, JUNCTION TEMPERATURE = 125C. 2,.APPLIES FOR ANODE CURRENT RATE OF RISE OF iO AMPERES PER MICROSECOND. 3.RATED AVERAGE GATE POWER DISSIPATION AND BLOCKING LOSSES INCLUDED. 50 40 30 This chart provides a rapid means of deter- mining SCR dissipation with low values of di/dt, AVERAGE POWER DISSIPATION WATTS 20 % DUTY CYCLE = +2100 S| ae, SL cy \ J ole oy _ as aA A pa a S YY ez S \ Y) Lo a ott Z a Wo 10 20 30 40 50 60 70 B80 90 100 10 120 PEAK ON-STATE CURRENT - AMPERES 5. MAXIMUM AVERAGE POWER DISSIPATION FOR RECTANGULAR CURRENT WAVEFORM 36 34 Lae 32 C144_30_ 30 de 9 TEST LIMITS 14418 [ NOTES: | | | "7 / Ln |, RECTANGULAR CURRENT PULSES, 50 MICROSECOND MINIMUM DURATION. 15 2.SEE CHARACTERISTIC TABLE FOR OTHER TEST CONDITIONS. 13 2 % 10 20 30 40 50 60 70 80 30 100 110 (000 400 200 (00 40 20 PEAK ON-STATE CURRENT ~AMPERES 6. MAXIMUM CONVENTIONAL CIRCUIT-COMMUTATED /\Eaae TURN-OFF TIME VS. PEAK ON-STATE CURRENT. NOTES: AVERAGE POWER DISSIPATION = ENERGY PER PULSE X REP. RATE . CONDITIONS STATED ON SINUSOIDAL CURRENT RATING CHARTS APPLY. 3. CASE TO AMBIENT THERMAL RESISTANCE REQUIREMENTS FOR THERMAL STABILITY MUST BE_MET,. SEE PARAGRAPH ENTITLED BASIS OF VOLTAGE RATINGS." 4 lo 20 40 100 ~=200 400 1000 2000 4000 10,000 PULSE BASE WIDTH - MICROSECONDS ENERGY PER PULSE FOR SINUSOIDAL PULSES 796 40,000 100,000 This chart gives the guar- anteed maximum turn- off time of the C144 as a function of the for- ward current, The use of this chart is neces sary for rectangular an- ode current pulses of the specified pulse width and frequency, This chart provides a rapid means of deter- mining anode dissipa- tion with half-sine-wave pulses, Multiply the en- ergy per pulse by the repetition rate to ob- tain average anode dissi- pation,Tg = 65C NOTES: |. MAXIMUM CASE TEMPERATURE = 65C 2, FOR SINUSOIDAL CURRENT WAVEFORM ONLY 3. MINIMUM CIRCUIT TURN-OFF TIME \ C144_15__ = I5ySEC C144_30_ = 30uSEC 4, MAXIMUM CIRCUIT dv/dt = 200V4%SEC 5. RATED Vogwy, RATED SWITCHING VOLTAGE 6. REVERSE VOLTAGE Vpm = 500 VOLTS VR = 30 VOLTS 1000 7 REQUIRED GATE DRIVE 800 20 VOLTS OPEN CIRCUIT, 20 OHM SOURCE 1.54SEC MIN. PULSE WIDTH 600 O.lmSEC MAX. RISE TIME 400 200 joo 80 60 PEAK ON-STATE CURRENT ~ AMPERES 40 20 4 10 20 40 106 200 400 1000 2000 4000 10,000 PULSE BASE WIDTH - MICROSECONDS 8. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. PULSE WIDTH (Te = 65C) Te =90C NOTES: |. MAXIMUM CASE TEMPERATURE = 90C 2.FOR SINUSOIDAL CURRENT WAVEFORM ONLY 3. MINIMUM CIRCUIT TURN- OFF TIME Cl44_I5_ =15pSEC 144_30_ =30SEC 4.MAXIMUM CIRCUIT dv/dt = 200 V/p SEC 5.RATED Vogm, RATED SWITGHING VOLTAGE 6. REVERSE VOLTAGE Vam=500 VOLTS Vp= 30 VOLTS 900 7.REQUIREDO GATE ORIVE 800 20 VOLTS OPEN CIRCUIT, 20 OHM SOURCE 1.5.SEC MIN. PULSE WIDTH 0.14 SEC MAX, RISE TIME o fe} 400 200 100 BO 60 PEAK ON-STATE CURRENT- AMPERES 40 20 105 4 10 20 40 loo 200 400 1000 62000 694000 10,000 PULSE BASE WIDTH~MICROSECONDS 9. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. PULSE WIDTH (Te = 90C) To = 15C NOTES: |, MAXIMUM CASE TEMPERATURE = 118C 2.FOR SINUSOIDAL CURRENT WAVEFORM ONLY 3. MINIMUM CIRCUIT TURN-OFF TIME C184_15_ = 15pSEC _ C144_30_. = 30ySEC 4, MAXIMUM CIRCUIT dv/dt = 200VMSEC 5.RATEO Voy, RATED SWITCHING VOLTAGE 6.REVERSE VOLTAGE Vam = 500 VOLTS Vp = 30 VOLTS 1000 800 7. REQUIRED GATE DRIVE 20 VOLTS OPEN CIRCUIT, 20 OHM SOURCE 600 1.5ySEC MIN. PULSE WIDTH O14SEC MAX. RISE TIME too 80 60 PEAK ON-STATE CURRENT - AMPERES 40 20 10 2 4 10 20 40 100 200 400 1coo 2000 4000 10,000 PULSE BASE WIDTH ~ MICROSECONDS 10. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS, PULSE WIDTH (Tg, = 115C) Charts 8, 9 and 10 give the maximum value of peak on-state current at which the specified turn-off-time and dv/dt still apply. 797C144 140.12 140.22 140.23 140.47 140.48 145.55 160.35 160.39 170.35 170.36 170.37 170.38 170.42 170.44 170.45 170.53 170.57 170.76 170.80 VpRM wW _ SWITCHING Be VOLTAGE Woe & Sk So i Ww Vp a 9 ry oa | RM 4g a tq(PULSE) ItmM; hi t (t7 - tz) - i Ee 2 uu z 3 0 5% WD Cr TIME fan) _ oth a > uJ + to t) te tata ts tgt7 tg 11. WAVEFORMS FOR PULSE CIRCUIT-COMMUTATED TURN-OFF TIME TEST. Specification Sheets 1N3879 Series (6 amp) Fast Recovery Diode 1N3889 Series (12 amp) Fast Recovery Diode A28 Series (12 amp) Very Fast Recovery Diode 1N3899 Series (20 amp) Fast Recovery Diode 1N3909 Series (30 amp) Fast Recovery Diode A96 Series (250 amp) Fast Recovery Diode C140 Series (835A) 50-400V High Speed SCR C144 Series (835A) 500-800V High Speed SCR C154-7 Series (110 amp) High Speed SCR C158, 9 Series (110 amp) High Speed SCR C385 Series (250 amp) High Speed SCR C358 Series (225A) High Speed SCR C395 Series (550A) up to 600V, High Speed SCR C388, C387 Series (550A) High Speed SCR C398, C397 Series (700A) High Speed SCR C185 Series (2385 amp) High Speed SCR C354, 5 Series (115 amp) High Speed SCR C506 Series (625 amp) High Speed SCR C510 Series (625 amp) High Speed SCR 200.38 200.41 200.42 200.49 660.13 660.14 660.15 660.16 671.4 671.15 Application Notes Application of Fast Recovery Rectifiers Simple Circuits For Triggering SCRs Into Fast-Rising Load Currents Commutation Behavior of Diffused High Cur- rent Rectifier Diodes A Low Cost Ultrasonic Frequency Inverter Using A Single SCR Technical Paper Reprints The Rating and Application of SCRs De- signed for Switching at High Frequencies Basic Magnetic Functions in Converters and Inverters Including New Soft Commutations SCR Inverter Commutated By An Auxiliary Impulse An SCR Inverter With Good Regulation and Sine Wave Output Seminar Notes The Widening World of The Fast Recovery Rectifier Diode The Amplifying Gate SCR *For copies of any published information, please order by decimal publica- tion number from: General Electric Company, Distribution Services, 1 River Road, Schenectady, N. Y. 12305. 798