Features @ Automatic power-down when deselected CMOS for optimum speed/power High speed 20ns Low active power 550 mW Low standby power 10mWw TTL-compatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge CY6116A CY6117A Functional Description TheCY6116A and CY6117A are high-per- formanceCMOS static RAMsorganizedas 2048 words by 8 bits. Easy memory expan- sion is provided by an active LOW chip en- able (CE) and active LOW output enable (OF), and three-state drivers. The CY6116A and CY6117A have an automat- ic power-down feature, reducing the power consumption by 83% when deselected. Writing to the device is accomplished when the chip enable (CE) and write enable (WE) inputs are both LOW, Data on the I/ O pins (1/Og through [/O7) is written into the memory location specified on the ad- dress pins (Ag thorugh Ajqy). 2048 x 8 Static R/(W RAM Readingthe device is accomplished by taking chip enable (CE) and output_ enable (OF) LOW while write enable (WE) remains HIGH. Under these conditions, the contents of the memeory location specified on the ad- dress pins will appear on the I/O pins. The I/O pins remain in high-impedance state when chip enable (CE) is HIGH or write en- able (WE) is LOW. The CY6EI6A and CY6II7A utilize a die coat to insure alpha immunity. Logic Block Diagram Pin Configurations DIP/SOJ Top View LCC Top View Vec Q Ay PLLESLL A 4 3 2,1, 282726 Wa Le we OE Ato 6116A cE i Wo WO? INPUT BUFFER "Og > WO, hoe if Aio >| 10s owl LJ > Op Ag a o 6116A-2 611GA-3 Ay 12Bx16x8 Z f wa WOs Lcc Ag = ARRAY wy Top View 2 i | y VO4 rove Bog Ag 2 SseP2z2 Aa ~ > Vs Zz 1 cE 4 VWOg we - COLUMN rower DECODER OE _- FT > WOr Ag Ag Ay Ao 6116A-4 6116A-4 Selection Guide 6116A20 6116A25 6116A35 6116A45 6116A55 6117A20 6117A25 6117A-35 6117A45 6117A-55 Maximum Access Time (ns) 20 25 35 45 55 Maximum Operating Commercial 100 100 100 100 80 Current(mA) Military 125 100 100 100 Maximum Standby Commercial 40/20 20 20 20 20 Current(mA) Military 40 20 20 20 2-19CY6116A a... = EF Gres CY6117A SEMICONDUCTOR Maximum Ratings (Above which the useful life may be impaired. Foruserguidelines, Static Discharge Voltage ...........5.2....0.00465 >2001V not tested.) (per MIL-STD-883, Method 3015) Storage Temperature ................. 65Cto + 150C Latch-UpCurrent ... 0.00. eee eee >200 mA Ambient Temperaturewith Operating Range PowerApplied ..............-0....055 55C to + 125C Ambient Supply Voltage to Ground Potential Range Temperature Vcc (Pin 24to Pin 12)..................0000. 0.5V to + 7.0V C al ye =0C y= 10% mmercia C SV it DC Voltage Applied to Outputs ' lot inHighZState ......... 00... c cece eee ~ 0.5V to + 7.0V Military] 58C to + 125C 5V + 10% DC Input Voltage ..........0.......0000- ~ 3.0V to + 7.0V Output Current into Outputs (Low) .............005 20mA Electrical Characteristics Over the Operating Range?! 6116A20 | 6116A25, 35,45 | 6116A55 6117A20 | 6117A25, 35,45 | 6117A55 Parameters Description Test Conditions Min. | Max. | Min. Max. | Min. | Max. | Units Von Output HIGH Voltage | Voc = Min., lon = 4.0mA 2.4 2.4 2.4 Vv Vo. Output LOW Voltage | Vcc = Min., lou = 8.0 mA 0.4 0.4 0.4 Vv Vir Input HIGH Voltage 2.22 | Vec 2.2 Vee 2.2 | Vec v Vit. Input LOW Voltage!3] -0.5] 08 | -0.5 08 |-05] 08 | Vv Ix Input Load Current GND < Vi < Vcc 10 } +10 ~10 +10 -10] +10 | vA loz Output Leakage GND < Vi < Vcc. 10 | +10 -10 +10 -10] +10 ] pA Current Output Disabled los Output Short Vcc = Max., Vour = GND -300 300 -300 | mA CircuitCurrent!4] lec Voc Operating Voc = Max. Com'l 100 100 80 mA Supply Current lout = OmA Mil | 25 125 100 = fmax = Itrc 35, 45 too Ispi Automatic CE Max. Voc. Com'l 40 20 20 mA Power-DownCurrent | CE > Vyy : ~ TTL inputs 1 = fax Mil | 25 40 20 35, 45, 55 20 Igy2 Automatic CE Max. Voc, Com'l 20 20 20 | mA Power-DownCurrent | CE > Vyry 0.34, CMOS Inputs Vin > Veo - 0.3V or Vin < 0.39, Mil 20 20 f=0 Capacitancel! Parameters Description Test Conditions Max. Units CIN Input Capacitance Ta = 25C, f = 1MHz, 10 pF Cout Output Capacitance Voc = 5.0V 10 pF Notes: 1. Fa is the instant on case temperature. 4. Not more than | output should be shorted at one time. Duration of the 2. See the last page of this specification for Group A subgroup testing in- short circuit should not excced 30 seconds. formation. 5, Tested initially and after any design or process changes that may affect 3. Vit min.) = 3.0V for pulse durations less than 30 ns. these parameters. 2-202 wet, FF rss SEMICONDUCTOR CY6116A CY6117A AC Test Loads and Waveforms RI 4810 Rt 4810 ov Sv ALL INPUT PULSES rn a OUTPUT R2 R2 90 pF | 25582 SPF I 2550) INCLUDING INCLUDING JIG AND == = JIG AND => = SCOPE - SCOPE - (a) (b) Equivalent to: THEVENIN EQUIVALENT BI1BA-5 B116A-6 1670 OUTPUT O_ww___0 1.73V Switching Characteristics Over the Operating Rangel: 4] GEL6A20 | 6116A25 | 6116A-35 | 6116A45 | 6116A55 Parameters Description Min. | Max. | Min. | Max. Min. I Max. | Min. | Max. | Min. | Max. | Units READ CYCLE tre Read Cycle Time 20 25 35 45 55 ns taa Address to Data Valid 20 25 35 45 55 ns toHA Data Hold from AddressChange 5 5 5 5 5 ns tack CE LOW to Data Valid 20 25 35 45 55 ns tpog OE LOW to Data Valid 10 12 15 20 25 ns tLZOF OE LOW to Low Z 3 3 3 3 3 ns tHZOF OE HIGH to High ZU1 8 10 12 15 20 ns tLZCk CE LOW to Low Z/81 5 5 5 5 5 ns OIZCE CE HIGH to High Z!7 8] 8 10 15 15 20 ns teu CE LOW to Power-Up 0 0 0 0 0 ns tpp CE HIGH to Power-Down 20 20 20 25 25 ns WRITE CYCLE! twe Write Cycle Time 20 20 25 40 50 ns tscE CE LOW to Write End 15 20 25 30 40 ns taw Address Set-Up to Write End 15 20 25 30 40 ns tA Address Hold from Write End 0 0 0 0 0 ns tsa Address Set-Up to Write Start 0 0 0 0 0 ns tpwe WE Pulse Width 15 15 20 20 25 ns tsp Data Set-Up to Write End 10 10 15 15 25 ns tip Data Hold from Write End 0 0 0 0 0 ns {HZWE WE LOW to High Z 7 7 10 1S 20 ns tLZWE WE HIGH to Low Z 5 5 5 5 5 ns Notes: ; 6. Test conditions assume signal transition time of S nsorless,timingref- 9. The internal write time of the memory is defined by the overlap of CE erence levels of |.5V, input pulse levels of 0 to 3.0V, and output loading LOW and WE LOW. Both signals must be LOW to initiate a write and of the specified Ip) /lon and 30-pF load capacitance. cither signal can terminate a write by going HIGH. The data input set- 7. tH7oF. tuzcE, and tyzwe are specified with CL = 5 pF as in part (b) upand hold timing should be referenced to the rising edge of the signal of AC Test Loads. Transition is measured +500 mV from steady state that terminates the write. voltage. 10. WE is HIGH for read cycle. 8. AL any given temperature and voltage condition, tyzcE is less than 11. Device is continuously selected. OF, CE = Vi. tizce for any given device. 12. Address valid prior to or coincident with CE transition LOW. 13. Data 1/O pins enter high-impedance state, as shown, when OF is held LOW during write. 14. [fCE goes HIGH simultaneously with WE HIGH, the output remains ina high-impedance state.a. CY6116A BF o6s CY6117A SEMICONDUCTOR Switching Waveforms Read Cycle No, 1) 1) fac ADDRESS *K toHa DATA OUT PREVIOUS DATA VALID Ne OK DATA VALID 6116A-7 Read Cycle No, 2[!0. 12] CE OE t tooE 'HZOE tHZzcE tiz0E HIGH HIGH IMPEDANCE IMPEDANCE DATA OUT DATA VALID tice tep tpu Vec Icc SUPPLY 50% 50% CURRENT ISB 6116A~-4 Write Cycle No. 1 (WE Controlled)! '31 ADORESS tpwe tsp DATA VALID DATA IN tHZzwe - tizwe 7 HIGH IMPEDANCE DATA I/O DATA UNDEFINED > FX 6116A-9i 7 ses SEMICONDUCTOR CY6116A CY6117A Switching Waveforms (continued) Write Cycle No. 2 (CE Controlled)! 13. 14] ADDRESS a mi DATA IN DATA I/O Typical DC and AC Characteristics tsp DATA UNDEFINED NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.4 1.2 1.0 08 0.6 NORMALIZED Icg | sg 0.4 0.2 0.0 4.0 lec sp 45 5.0 5.5 SUPPLY VOLTAGE (V) 6.0 NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE NORMALIZED tan 45 5.0 5.5 SUPPLY VOLTAGE (V} 6.0 NORMALIZED Ico | s5 NORMALIZED taa 1.2 1.0 08 0.6 0.4 0.2 0.0 DATA-IN VALID tHZzWE Nl HIGH IMPEDANCE tuo \ NORMALIZED SUPPLY CURRENT vs, AMBIENT TEMPERATURE foc Voc = 5.0V Vin = 5.0V 55 25 125 AMBIENT TEMPERATURE (C) NORMALIZED ACCESS TIME ys. AMBIENT TEMPERATURE Z 08 A "| Voc = 5.0V ra 0.6 -55 25 125 AMBIENT TEMPERATURE (C) OUTPUT SOURCE CURRENT (mA; QUTPUT SINK CURRENT (mA) <= 120 6116A-10 OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE 100 80 60 40 20 0 0.0 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE (V) OUTPUT SINK CURRENT ys. OUTPUT VOLTAGE 140 120 100 80 60 40 20 0 0.0 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE (V) SRAMs aak = SEMICONDUCTOR CY6116A CY6117A Typical DC and AC Characteristics (continued) TYPICAL POWER-ON CURRENT vs. SUPPLY VOLTAGE NORMALIZED |p ee) o a Oo ao Oo S a DELTA ta, (ns) TYPICAL ACCESS TIME CHANGE ys. OUTPUT LOADING 30.0 25.0 2 20.0 a N a 15.0 S S 10.0 Veo = 4.5V z Ta = 25C 5.0 Voc = 5.0V Ta = 25C Vin = 0.5V NORMALIZED Ic vs. CYCLE TIME 00 #10 20 3004640 50 0.0 0 200 400 600 9800 1000 085 20 30 40 SUPPLY VOLTAGE (V) CAPACITANCE (pF) CYCLE FREQUENCY (MHz) Ordering Information Speed Package | Operating Speed Package | Operating (ns) Ordering Code Type Range (ns) Ordering Code Type Range 20 CY6116A20PC Pl Commercial 25 CY6117A-25LMB LSS Military CY6116A20DC D12 35 CY6117A-35LMB L55 Military 25 CY6116A25PC Pil Commercial 45 CY6117A-45LMB L55 Military CY6116A25DC D12 55 CY6117A-55LMB L55 Military CY6116A25LC L64 CY6L16A25DMB D12 Military CY6116A25LMB L64 35 CY6116A-35PC Pll Commercial CY6116A~35DC D12 CY6116A-35LC L64 CY6116A35DMB D12 Military CY6116A-351LMB L64 45 CY6116A45PC Pll Commercial CY6116A-45DC D12 CY6116A45LC 164 CY6116A45DMB D12 Military CY6116A45LMB L64 55 CY6116A55PC Pit Commercial CY6116AS5DC D12 CY6116A55LC 164 CY6116A~55DMB D12 Military CY6116A-S5LMB L64a... CY6116A Ss vcs CY6117A SEMICONDUCTOR MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Parameters Subgroups Vou 1,2,3 VoL 1, 2,3 Vin 1,2,3 Vir Max. 1, 2,3 hx 1, 2,3 loz 1,2,3 Icc 1,2,3 Isp 1, 2,3 Switching Characteristics Parameters Subgroups READ CYCLE tre 7, 8,9, 10, 11 tAA 7, 8, 9, 10, 11 lona 7, 8,9, 10, 11 lACE 7, 8,9, 10, 11 IDOE 7, 8,9, 10,11 WRITE CYCLE twe 7, 8,9, 10,11 tsck 7, 8,9, 10, 11 law 7, 8,9, 10, 11 tHa 7, 8, 9, 10, 11 tsa 7, 8,9, 10, 11 tpwWE 7,8, 9, 10, 14 tsp 7, 8,9, 10, 11 tp 7, 8,9, 10, 11 Document #: 38-00105-A