R6020ANJ Datasheet Nch 600V 20A Power MOSFET l Outline VDSS 600V RDS(on)(Max.) 0.25 ID 20A PD 100W LPT(S) l Inner circuit l Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant l Packaging specifications Embossed Tape Packing l Application Type Switching Power Supply Reel size (mm) Tape width (mm) Basic ordering unit (pcs) Taping code Marking 330 24 1000 TL R6020ANJ l Absolute maximum ratings (Ta = 25C) Parameter Symbol VDSS ID*1 ID*1 ID,pulse*2 VGSS EAS*3 EAR*4 IAR*3 PD Tj Tstg Drain - Source voltage Continuous drain current TC = 25C TC = 100C Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25C) Junction temperature Range of storage temperature Reverse diode dv/dt www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. dv/dt 1/13 Value Unit 600 20 9.8 80 30 26.7 8.4 10 100 150 -55 to +150 15 V A A A V mJ mJ A W V/ns 20140728 - Rev.003 R6020ANJ Datasheet l Absolute maximum ratings Parameter Symbol Drain - Source voltage slope Conditions VDS = 480V, ID = 20A dv/dt Tj = 125 Values Unit 50 V/ns l Thermal resistance Parameter Values Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 1.25 /W Thermal resistance, junction - ambient RthJA - - 80 /W Soldering temperature, wavesoldering for 10s Tsold - - 265 l Electrical characteristics (Ta = 25C) Parameter Symbol Values Conditions Unit Min. Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 600 - - V Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 10A - 700 - V Tj = 25C - 0.1 100 A Tj = 125C - - 1000 IGSS VGS = 30V, VDS = 0V - - 100 nA VGS(th) VDS = 10V, ID = 1mA 2.5 - 4.5 V Tj = 25C - 0.19 0.25 Tj = 125C - 0.37 - f = 1MHz, open drain - 13.4 - VDS = 600V, VGS = 0V Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS VGS = 10V, ID = 10A Static drain - source on - state resistance Gate input resistance www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. RDS(on)*6 RG 2/13 20140728 - Rev.003 R6020ANJ Datasheet l Electrical characteristics (Ta = 25C) Parameter Symbol Conditions Values Min. Typ. Max. Transconductance gfs*6 VDS = 10V, ID = 10A 7 14 - Input capacitance Ciss VGS = 0V - 2040 - Output capacitance Coss VDS = 25V - 1660 - Reverse transfer capacitance Crss f = 1MHz - 70 - Effective output capacitance, energy related Co(er) - 69.8 - Effective output capacitance, time related Co(tr) Turn - on delay time td(on)*6 Rise time Turn - off delay time Fall time VGS = 0V, VDS = 0V to 480V Unit S pF pF - 259 - VDD 300V, VGS = 10V - 40 - tr*6 ID = 10A - 60 - td(off)*6 RL = 30 - 230 460 tf*6 RG = 10 - 70 140 ns l Gate charge characteristics (Ta = 25C) Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Qg*6 VDD 300V - 65 - Gate - Source charge Qgs*6 ID = 20A - 10 - Gate - Drain charge Qgd*6 VGS = 10V - 25 - Gate plateau voltage V(plateau) VDD 300V, ID = 20A - 5.9 - Unit nC V *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L500H, VDD=50V, RG=25, starting Tj=25C *4 L500H, VDD=50V, RG=25, starting Tj=25C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. 3/13 20140728 - Rev.003 R6020ANJ Datasheet l Body diode electrical characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Inverse diode continuous, forward current IS*1 Inverse diode direct current, pulsed ISM*2 Forward voltage VSD*6 Conditions Values Unit Min. Typ. Max. - - 20 A - - 80 A - - 1.5 V - 493 - ns - 7.43 - C - 30.2 - A - 800 - A/s TC = 25 Reverse recovery time trr*6 Reverse recovery charge Qrr*6 Peak reverse recovery current Irrm*6 Peak rate of fall of reverse recovery current dirr/dt VGS = 0V, IS = 10A IS = 20A di/dt = 100A/s Tj = 25 l Typical transient thermal characteristics Symbol Value Rth1 0.0462 Rth2 0.17 Rth3 0.6 www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Cth1 0.00308 Cth2 0.0118 Cth3 0.232 Unit Ws/K 20140728 - Rev.003 R6020ANJ Datasheet l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. 5/13 20140728 - Rev.003 R6020ANJ Datasheet l Electrical characteristic curves Fig.4 Avalanche Current vs. Inductive Load Fig.5 Avalanche Power Losses Fig.6 Avalanche Energy Derating Curve vs. Junction Temperature www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. 6/13 20140728 - Rev.003 R6020ANJ Datasheet l Electrical characteristic curves Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II) Fig.9 Tj = 150C Typical Output Characteristics (I) Fig.10 Tj = 150C Typical Output Characteristics (II) www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. 7/13 20140728 - Rev.003 R6020ANJ Datasheet l Electrical characteristic curves Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. 8/13 20140728 - Rev.003 R6020ANJ Datasheet l Electrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.17 Static Drain - Source On - State Resistance vs. Drain Current www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. 9/13 20140728 - Rev.003 R6020ANJ Datasheet l Electrical characteristic curves Fig.18 Typical Capacitance vs. Drain Source Voltage Fig.19 Coss Stored Energy Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. 10/13 20140728 - Rev.003 R6020ANJ Datasheet l Electrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. 11/13 Fig.23 Reverse Recovery Time vs. Inverse Diode Forward Current 20140728 - Rev.003 R6020ANJ Datasheet l Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. 12/13 20140728 - Rev.003 R6020ANJ Datasheet l Dimensions www.rohm.com (c) 2014 ROHM Co., Ltd. All rights reserved. 13/13 20140728 - Rev.003 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: R6020ANJTL