R6020ANJ
Nch 600V 20A Power MOSFET Datasheet
llOutline
VDSS 600V LPT(S)
RDS(on)(Max.) 0.25Ω
ID±20A
PD100W
llInner circuit
llFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to
be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant llPackaging specifications
Type
Packing Embossed
Tape
Reel size (mm) 330
llApplication Tape width (mm) 24
Switching Power Supply Basic ordering unit (pcs) 1000
Taping code TL
Marking R6020ANJ
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Value Unit
Drain - Source voltage VDSS 600 V
Continuous drain current TC = 25°C ID*1 ±20 A
TC = 100°C ID*1 ±9.8 A
Pulsed drain current ID,pulse*2 ±80 A
Gate - Source voltage VGSS ±30 V
Avalanche energy, single pulse EAS*3 26.7 mJ
Avalanche energy, repetitive EAR*4 8.4 mJ
Avalanche current IAR*3 10 A
Power dissipation (Tc = 25°C) PD100 W
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
Reverse diode dv/dt dv/dt 15 V/ns
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 1/13 20140728 - Rev.003
R6020ANJ Datasheet
llAbsolute maximum ratings
Parameter Symbol Conditions Values Unit
Drain - Source voltage slope dv/dt
VDS = 480V, ID = 20A
50 V/ns
Tj = 125℃
llThermal resistance
Parameter Symbol Values Unit
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 1.25 ℃/W
Thermal resistance, junction - ambient RthJA - - 80 ℃/W
Soldering temperature, wavesoldering for 10s Tsold - - 265 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Drain - Source breakdown
voltage V(BR)DSS VGS = 0V, ID = 1mA 600 - - V
Drain - Source avalanche
breakdown voltage V(BR)DS VGS = 0V, ID = 10A - 700 - V
Zero gate voltage
drain current IDSS
VDS = 600V, VGS = 0V
μA
Tj = 25°C - 0.1 100
Tj = 125°C - - 1000
Gate - Source leakage current IGSS VGS = ±30V, VDS = 0V - - ±100 nA
Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 2.5 - 4.5 V
Static drain - source
on - state resistance RDS(on)*6
VGS = 10V, ID = 10A
Ω
Tj = 25°C - 0.19 0.25
Tj = 125°C - 0.37 -
Gate input resistance RG f = 1MHz, open drain - 13.4 - Ω
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 2/13 20140728 - Rev.003
R6020ANJ Datasheet
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Transconductance gfs*6 VDS = 10V, ID = 10A 7 14 - S
Input capacitance Ciss VGS = 0V - 2040 -
pFOutput capacitance Coss VDS = 25V - 1660 -
Reverse transfer capacitance Crss f = 1MHz - 70 -
Effective output capacitance,
energy related Co(er) VGS = 0V,
VDS = 0V to 480V
- 69.8 -
pF
Effective output capacitance,
time related Co(tr) - 259 -
Turn - on delay time td(on)*6 VDD ⋍ 300V, VGS = 10V - 40 -
ns
Rise time tr*6 ID = 10A - 60 -
Turn - off delay time td(off)*6 RL = 30Ω - 230 460
Fall time tf*6 RG = 10Ω - 70 140
llGate charge characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Total gate charge Qg*6 VDD ⋍ 300V - 65 -
nC
Gate - Source charge Qgs*6 ID = 20A - 10 -
Gate - Drain charge Qgd*6 VGS = 10V - 25 -
Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 20A - 5.9 - V
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L⋍500μH, VDD=50V, RG=25Ω, starting Tj=25°C
*4 L⋍500μH, VDD=50V, RG=25Ω, starting Tj=25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 3/13 20140728 - Rev.003
R6020ANJ Datasheet
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Inverse diode continuous,
forward current IS*1
TC = 25℃
- - 20 A
Inverse diode direct current,
pulsed ISM
*2 - - 80 A
Forward voltage VSD*6 VGS = 0V, IS = 10A - - 1.5 V
Reverse recovery time trr*6
IS = 20A
di/dt = 100A/μs
- 493 - ns
Reverse recovery charge Qrr*6 - 7.43 - μC
Peak reverse recovery current Irrm*6 - 30.2 - A
Peak rate of fall of reverse
recovery current dirr/dt Tj = 25℃- 800 - A/μs
llTypical transient thermal characteristics
Symbol Value Unit Symbol Value Unit
Rth1 0.0462
K/W
Cth1 0.00308
Ws/K
Rth2 0.17 Cth2 0.0118
Rth3 0.6 Cth3 0.232
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 4/13 20140728 - Rev.003
R6020ANJ Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 5/13 20140728 - Rev.003
R6020ANJ Datasheet
llElectrical characteristic curves
Fig.4 Avalanche Current vs. Inductive Load Fig.5 Avalanche Power Losses
Fig.6 Avalanche Energy Derating Curve
vs. Junction Temperature
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 6/13 20140728 - Rev.003
R6020ANJ Datasheet
llElectrical characteristic curves
Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II)
Fig.9 Tj = 150°C Typical Output
Characteristics (I)
Fig.10 Tj = 150°C Typical Output
Characteristics (II)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 7/13 20140728 - Rev.003
R6020ANJ Datasheet
llElectrical characteristic curves
Fig.11 Breakdown Voltage vs.
Junction Temperature
Fig.12 Typical Transfer Characteristics
Fig.13 Gate Threshold Voltage vs.
Junction Temperature
Fig.14 Transconductance vs. Drain Current
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 8/13 20140728 - Rev.003
R6020ANJ Datasheet
llElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 9/13 20140728 - Rev.003
R6020ANJ Datasheet
llElectrical characteristic curves
Fig.18 Typical Capacitance vs. Drain -
Source Voltage
Fig.19 Coss Stored Energy
Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 10/13 20140728 - Rev.003
R6020ANJ Datasheet
llElectrical characteristic curves
Fig.22 Inverse Diode Forward Current vs.
Source - Drain Voltage
Fig.23 Reverse Recovery Time vs.
Inverse Diode Forward Current
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 11/13 20140728 - Rev.003
R6020ANJ Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 12/13 20140728 - Rev.003
R6020ANJ Datasheet
llDimensions
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved. 13/13 20140728 - Rev.003
