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Replaced by MWIC930NR1(GNR1). There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead-free terminations.
MWIC930R1 MWIC930GR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MWIC930 wideband integrated circuit is designed for CDMA and
GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to
28 Volts) LDMOS IC technology and integrates a multi -stage structure. Its
wideband On- Chip integral matching circuitry makes it usable from 790 to
1000 MHz. The linearity performances cover all modulations for cellular
applications: GSM, GSM EDGE, TDMA, N- CDMA and W-CDMA.
Final Application
•Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 =
240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921 - 960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 45%
Driver Application
•Typical Single-Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 =
90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band
(865- 894 MHz), IS -95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 21%
ACPR @ 750 kHz Offset — -52 dBc in 30 kHz Bandwidth
•Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output
Power
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
•Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
•On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)
•Integrated ESD Protection
•200°C Capable Plastic Package
•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Document Number: MWIC930
Rev. 5, 5/2006
Freescale Semiconductor
Technical Data
746- 960 MHz, 30 W, 26-28 V
SINGLE N-CDMA, GSM/GSM EDGE
RF LDMOS WIDEBAND INTEGRATED
POWER AMPLIFIERS
CASE 1329- 09
TO-272 WB - 16
PLASTIC
MWIC930R1
MWIC930R1
MWIC930GR1
CASE 1329A- 03
TO-272 WB - 16 GULL
PLASTIC
MWIC930GR1
Figure 1. Functional Block Diagram Figure 2. Pin Connections
(Top View)
GND
VRD1
RFin
VGS1
GND
VRD2
RFout/
VDS2
GND
VGS2
GND
VRG2
VDS1
VRG1
NCNC
NC
VGS1
RFin
VDS1
VGS2
VDS2/RFout
Quiescent Current
Temperature Compensation
VRD2
VRG2 2
3
4
5
6
7
8
16
15
14
13
12
9
10
11
1
Note: Exposed backside flag is source
terminal for transistors.
VRD1
VRG1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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RF Device Data
Freescale Semiconductor
MWIC930R1 MWIC930GR1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate- Source Voltage VGS -0.5, +15 Vdc
Storage Temperature Range Tstg -65 to +175 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
GSM Application Stage 1, 26 Vdc, IDQ = 90 mA
(Pout = 30 W CW) Stage 2, 26 Vdc, IDQ = 240 mA
GSM EDGE Application Stage 1, 27 Vdc, IDQ = 90 mA
(Pout = 15 W CW) Stage 2, 27 Vdc, IDQ = 240 mA
CDMA Application Stage 1, 27 Vdc, IDQ = 90 mA
(Pout = 5 W CW) Stage 2, 27 Vdc, IDQ = 240 mA
RθJC
5.9
1.4
6.5
1.7
6.5
1.8
°C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M3 (Minimum)
Charge Device Model C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22- A113, IPC/JEDEC J- STD -020 3 260 °C
Table 5. Electrical Characteristics (TC = 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg. N-CDMA,
f = 880 MHz, Single- Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain Gps 28 31 — dB
Power Added Efficiency PAE 18 21 — %
Input Return Loss
(f = 880 MHz)
IRL — -12 -9 dB
Adjacent Channel Power Ratio ACPR — -52 -48 dBc
Typical Performances (In Freescale Test Fixture) VDD = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, 840 MHz<Frequency<920 MHz
Quiescent Current Accuracy over Temperature (2)
Stage 1 with 33.2 kΩ Gate Feed Resistors (- 30 to 115°C)
Stage 2 with 47.5 kΩ Gate Feed Resistors (- 30 to 115°C)
∆I1QT
∆I2QT
—
±2.5
±2.5
— %
Gain Flatness in 80 MHz Bandwidth @ Pout = 5 W CW GF— 0.3 — dB
Deviation from Linear Phase in 80 MHz Bandwidth @ Pout = 5 W CW Φ— 0.6 — °
Delay @ Pout = 5 W CW Including Output Matching Delay — 3 — ns
Part- to- Part Phase Variation @ Pout = 5 W CW ∆Φ —±15 — °
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977.
(continued)
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MWIC930R1 MWIC930GR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C, unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical GSM/GSM EDGE Performances (In Freescale GSM/GSM EDGE Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 =
240 mA, 921 MHz<Frequency<960 MHz
Output Power, 1dB Compression Point P1dB — 30 — W
Power Gain @ Pout = 30 W CW Gps — 30 — dB
Power Added Efficiency @ Pout = 30 W CW PAE — 45 — %
Input Return Loss @ Pout = 30 W CW IRL — -12 — dB
Intermodulation Distortion
(15 W, 2 -Tone, 100 kHz Tone Spacing)
IMD — -30 — dBc
Intermodulation Distortion
(1 W, 2 -Tone, 100 kHz Tone Spacing)
IMD
backoff
—-45 — dBc
Gain Flatness in a 40 MHz Bandwidth @ Pout = 30 W CW GF— 0.3 — dB
Deviation from Linear Phase in a 40 MHz Bandwidth @ Pout = 30 W CW Φ— 0.6 — °
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RF Device Data
Freescale Semiconductor
MWIC930R1 MWIC930GR1
Z6 0.0438″ x 0.2009″Microstrip
Z7 0.5274″ x 0.0504″Microstrip
Z8 0.0504″ x 0.250″Microstrip
Z9 0.880″ x 0.0254″Microstrip
Z10 0.0254″ x 0.250″Microstrip
PCB Rogers 4350, 0.020″, εr = 3.50
Figure 3. MWIC930R1(GR1) Test Fixture Schematic
Z1 0.0438″ x 0.970″50 Ω Microstrip
(not including lead pad)
Z2 0.234″ x 0.1183″Microstrip
(including lead pad)
Z3 0.1575″ x 0.9379″Microstrip
Z4 0.08425″ x 0.0729″Microstrip
Z5 0.08425″ x 0.5111″Microstrip
RF
OUTPUT
RF
INPUT Z1
VD2
Z8
Z7
C5 C6
VG1
R1 R3C13 C10 C7
Z2 Z3 Z4 Z5
Z9
Z10
C3
C4
C2C1
VG2
R2 R4C14 C11 C8
VD1
C15 C12 C9
1
2
3
4
5
6
7
8
14
13
12
11
10
9
15
16
NC
NC
NC
Quiescent Current
Temperature Compensation
Z6
Table 6. MWIC930R1(GR1) Test Fixture Component Designations and Values
Part Description Part Number Manufacturer
*C1 15 pF High Q Capacitor ATC600S150JW ATC
*C2 6.8 pF High Q Capacitor - GSM Fixture
8.2 pF High Q Capacitor - CDMA Fixture
ATC600S6R8CW
ATC600S8R2CW
ATC
*C3 5.6 pF High Q Capacitor ATC600S5R6CW ATC
*C4, C5, C7, C8, C9 47 pF High Q Capacitors ATC600S470JW ATC
C6, C13, C14, C15 1 µF Chip Capacitors GRM42-2X7R105K050AL Murata
C10, C11, C12 10 nF Chip Capacitors C0603C103J5R Kemet
R1, R2 1 kW, 1/8 W Chip Resistors RM73B2AT102J KOA Speer
R3, R4 1 MW, 1/4 W Chip Resistors RM73B2BT105J KOA Speer
* For output matching and bypass purposes, it is strongly recommended to use these exact capacitors.
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MWIC930R1 MWIC930GR1
5
RF Device Data
Freescale Semiconductor
C15
VD2
VD1
RF
Input
RF
Output
C12
C9
C5
C6
C3
C2C1
C4
VG2
R2
R4
C14
VG1
R1
C13
R3C10
C11
C8
C7
Figure 4. MWIC930R1(GR1) Test Circuit Component Layout
MWIC930
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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6
RF Device Data
Freescale Semiconductor
MWIC930R1 MWIC930GR1
TYPICAL CHARACTERISTICS
100
−55
−20
0.1
7th Order
TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
VDD = 27 Vdc
Pout = 15 W (Avg.)
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
Two−Tone PEP = 30 W
5th Order
3rd Order
−25
−30
−35
−40
−45
−50
110 40
27
34
0
25_C
Pout, OUTPUT POWER (WATTS)
Figure 6. Power Gain versus Output Power
Gps, POWER GAIN (dB)
VDD = 27 Vdc
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
33
32
31
30
29
28
5 1015 20253035
TC = −30_C
85_C
35
20
32
5
Pin = 0 dBm
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 7. Power Gain versus Supply Voltage
Gps, POWER GAIN (dB)
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
3025201510
30
28
26
24
22
6 dBm
9 dBm
12 dBm
15 dBm
3 dBm
1000
20
40
700
f, FREQUENCY (MHz)
Figure 8. Power Gain versus Frequency
Gps, POWER GAIN (dB)
VDD = 27 Vdc
Pout = 30 W (CW)
IDQ1 = 90 mA
IDQ2 = 240 mA
25_C
TC = −30_C
85_C
38
36
34
32
30
28
26
24
22
750 800 850 900 950
40
−28
−16
0
Pout, OUTPUT POWER (WATTS)
Figure 9. Input Return Loss versus Output Power
INPUT RETURN LOSS (dB)IRL,
VDD = 27 Vdc
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
−30_C
TC = 85_C
−18
−20
−22
−24
−26
5 101520253035
25_C
10
−60
−40
0
Pout, OUTPUT POWER (WATTS)
Figure 10. Adjacent Channel Power Ratio
versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
−42
−44
−46
−48
−50
−52
−54
−56
−58
123 456789
VDD = 27 Vdc
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
9−Channel IS−95 CDMA
25_C
−30_C
TC = 85_C
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RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
40
10
55
0
Pout, OUTPUT POWER (WATTS)
Figure 11. Power Added Efficiency versus
Output Power
PAE, POWER ADDED EFFICIENCY (%)
50
45
40
35
30
25
20
15
5 101520253035
25_C
TC = −30_C
85_C
1000
40
58
700
f, FREQUENCY (MHz)
Figure 12. Power Added Efficiency versus
Frequency
750 800 850 900 950
56
54
52
50
48
46
44
42
PAE, POWER ADDED EFFICIENCY (%)
VDD = 27 Vdc
IDQ1 = 90 mA
IDQ2 = 240 mA
f = 880 MHz
25_C
TC = −30_C
85_C
VDD = 27 Vdc
Pout = 30 W (CW)
IDQ1 = 90 mA
IDQ2 = 240 mA
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RF Device Data
Freescale Semiconductor
MWIC930R1 MWIC930GR1
Figure 13. Series Equivalent Input and Load Impedance
f
MHz
Zin
Ω
Zload
Ω
740
760
780
26.61 - j3.68
28.22 + j2.21
26.88 - j0.53
4.28 + j2.99
4.37 + j2.91
4.39 + j2.79
VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg.
Zin = Device input impedance as measured from
RF input to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zin Zload
Device
Under Test
Output
Matching
Network
800
820
840
30.57 + j4.31
37.83 + j5.30
33.79 + j5.53
4.34 + j2.64
4.21 + j2.54
4.06 + j2.52
860
880
900
41.92 + j3.42
47.77 - j5.84
45.58 - j0.40
3.90 + j2.58
3.73 + j2.70
3.59 + j2.93
920
940
960
47.83 - j12.15
41.58 - j22.64
45.55 - j18.05
3.43 + j3.17
3.28 + j3.44
3.13 + j3.75
1
f = 960 MHz
f = 740 MHz
Zo = 50 Ω
Zin
Zload
f = 960 MHz f = 740 MHz
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RF Device Data
Freescale Semiconductor
DRIVER/PRE- DRIVER PERFORMANCE
Z6 0.0438″ x 0.2009″Microstrip
Z7 0.5274″ x 0.0504″Microstrip
Z8 0.0504″ x 0.250″Microstrip
Z9 0.880″ x 0.0254″Microstrip
Z10 0.0254″ x 0.250″Microstrip
PCB Rogers 4350, 0.020″, εr = 3.50
Figure 14. MWIC930R1(GR1) Test Fixture Schematic —
Alternate Characterization for Driver/Pre-Driver Performance
Z1 0.0438″ x 0.970″50 Ω Microstrip
(not including lead pad)
Z2 0.234″ x 0.1183″Microstrip
(including lead pad)
Z3 0.1575″ x 0.9379″Microstrip
Z4 0.08425″ x 0.0729″Microstrip
Z5 0.08425″ x 0.5111″Microstrip
RF
OUTPUT
RF
INPUT Z1
VD2
Z8
Z7
C5 C6
VG1
R1 R3C13 C10 C7
Z2 Z3 Z4 Z5
Z9
Z10
C3
C4
C2C1
VG2
R2 R4C14 C11 C8
VD1
C15 C12 C9
1
2
3
4
5
6
7
8
14
13
12
11
10
9
15
16
NC
NC
NC
Quiescent Current
Temperature Compensation
Z6
Table 7. MWIC930R1(GR1) Test Fixture Component Designations and Values —
Alternate Characterization for Driver/Pre-Driver Performance
Part Description Part Number Manufacturer
*C1 12 pF High Q Capacitor ATC600S120JW ATC
*C2 8.2 pF High Q Capacitor - CDMA Fixture ATC600S8R2CW ATC
*C3 5.6 pF High Q Capacitor ATC600S5R6CW ATC
*C4, C5, C7, C8, C9 47 pF High Q Capacitors ATC600S470JW ATC
C6, C13, C14, C15 1 µF Chip Capacitors GRM42-2X7R105K050AL Murata
C10, C11, C12 10 nF Chip Capacitors C0603C103J5R Kemet
R1, R2 1 kW, 1/8 W Chip Resistors RM73B2AT102J KOA Speer
R3, R4 1 MW, 1/4 W Chip Resistors RM73B2BT105J KOA Speer
* For output matching and bypass purposes, it is strongly recommended to use these exact capacitors.
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RF Device Data
Freescale Semiconductor
MWIC930R1 MWIC930GR1
TYPICAL CHARACTERISTICS
DRIVER/PRE- DRIVER PERFORMANCE
30
−65
−60
20
System Noise Floor
Pout, OUTPUT POWER (dBm)
Figure 15. Single-Carrier N-CDMA ACPR
versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
VDD = 27 Vdc
IDQ1 = 105 mA, IDQ2 = 230 mA
f = 880 MHz
N−CDMA IS−95 Pilot, Sync, Paging,
Traffic Codes 8 Through 13
ACPR
−61
−62
−63
−64
22 24 26 28
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Freescale Semiconductor
f = 960 MHz
f = 740 MHz
Zo = 50 Ω
Zin
Zload
Figure 16. Series Equivalent Input and Load Impedance —
Alternate Characterization for Driver/Pre-Driver Performance
f
MHz
Zin
Ω
Zload
Ω
740
760
780
53.944 + j6.745
55.006 + j7.440
54.452 + j7.112
2.535 + j1.662
2.602 + j1.080
2.688 + j0.548
VDD = 27 Vdc, IDQ1 = 105 mA, IDQ2 = 230 mA, Pout = 5 W Avg.
Zin = Device input impedance as measured from
RF input to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zin Zload
Device
Under Test
Output
Matching
Network
800
820
840
55.549 + j7.656
55.190 + j7.835
55.604 + j7.855
2.659 + j0.064
2.615 + j0.329
2.568 + j0.450
860
880
900
55.110 + j7.410
45.606 + j5.832
55.752 + j4.763
2.494 + j0.620
2.444 + j0.650
2.440 + j0.689
920
940
960
49.206 + j9.284
50.088 + j8.752
49.939 + j9.030
2.134 + j0.930
2.155 + j0.835
2.095 + j1.235
f = 740 MHz
f = 960 MHz
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RF Device Data
Freescale Semiconductor
MWIC930R1 MWIC930GR1
NOTES
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13
RF Device Data
Freescale Semiconductor
NOTES
14
RF Device Data
Freescale Semiconductor
MWIC930R1 MWIC930GR1
PACKAGE DIMENSIONS
MWIC930R1 MWIC930GR1
15
RF Device Data
Freescale Semiconductor
16
RF Device Data
Freescale Semiconductor
MWIC930R1 MWIC930GR1
MWIC930R1 MWIC930GR1
17
RF Device Data
Freescale Semiconductor
18
RF Device Data
Freescale Semiconductor
MWIC930R1 MWIC930GR1
MWIC930R1 MWIC930GR1
19
RF Device Data
Freescale Semiconductor
20
RF Device Data
Freescale Semiconductor
MWIC930R1 MWIC930GR1
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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2006. All rights reserved.
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Document Number: MWIC930
Rev. 5, 5/2006
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