TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1
Advance Product Information
June 29, 2001
18 - 20 GHz 5-Bit Phase Shifter TGP1439-EPU
Key Features and Performance
• 0.5um pHEMT Technology
• 18-20 GHz Frequency Range
• 3º Typical RMS Phase Shift Error
• -5 dB Typical Insertion Loss
• Control Voltage: -2.5 V to -5.0 V
• Compact 1.27 mm2 Die Area
Primary Applications
• Phased Arrays
• Satellite Communication Systems
The TriQuint TGP1439-EPU is a 5-Bit Digital Phase
Shifter MMIC design using TriQuint’s proven 0.5 µm
Power pHEMT process to support a variety of K-Band
phased array applications including satellite
communication systems.
The 5-bit design utilizes a compact topology that
achieves a 1.27 mm2 die area, high performance and
good tolerance to control voltage variation
The TGP1439-EPU provides a 5-Bit digital phase shift
function with a nominal -5 dB insertion loss and 3º
RMS phase shift error over a bandwidth of 18-20 GHz.
The TGP1439-EPU requires a minimum of off-chip
components and operates with a -5.0 V to -2.5 V
control voltage range. Each device is RF tested on-
wafer to ensure performance compliance. The device
is available in chip form.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGP1439-EPU Typical RF Performance (Fixtured)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
17 18 19 20 21
Frequency (GHz)
Return Loss (dB)
Input
Output
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
17 18 19 20 21
Frequency (GHz)
Insertion Loss (dB)
-10
-5
0
5
10
15
20
25
30
35
40
Phase Shift Error (deg)
Insertion Loss
P
hase Error
TGP1439-EPU Typical RF Performance (Fixtured) TGP1439-EPU Typical RF Performance (Fixtured)
-12
-9
-6
-3
0
3
6
9
12
0 4 8 1216202428
Phase State
Phase Shift Error (deg)
18 GHz
19 GHz
20 GHz
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 2
Advance Product Information
June 29, 2001
RECOMMENDED MAXIMUM RATINGS
Symbol Parameter Value Notes
V-Control Voltage -8 V
I+Control Current 1 mA 3/
PDPower Dissipation 0.1 W
PIN Input Continuous Wave Power 20 dBm
TCH Operating Channel Temperature 150 °C1/, 2/
TMMounting Temperature (30 seconds) 320 °C
TSTG Storage Temperature -65 °C to 150 °C
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Total current for the entire MMIC
Electrical Characteristics
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Symbol Parameter Test Condition
Vctnl=0V / -2.5V
Limit
Min Nom Max
Units
IL Insertion Loss F = 18, 19, 20 GHz
States 0 and 31
-5.5 -4.6 -4.0 dB
IRL Input Return
Loss
F = 18, 19, 20 GHz
States 0 and 31
-16 -11 dB
ORL Output Return
Loss
F = 18, 19, 20 GHz
States 0 and 31
-14 -11 dB
PS Phase Shift F = 18, 19, 20 GHz
State 31
342 344 350 deg
0
200
400
600
800
1000
1200
-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0
19 GHz Reference State Insertion Loss (dB)
Number of Devices
TGP1439-EPU
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 3
Advance Product Information
June 29, 2001
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Typical Fixtured Performance Over the 18-20 GHz Band
0
200
400
600
800
1000
1200
1400
-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0
19 GHz State 31 Phase Shift (deg)
Number of Devices
19 GHz State 31 Insertion Loss (dB)
Number of Devices
0
100
200
300
400
500
600
700
800
340 341 342 343 344 345 346 347 348 349 350
Parameter Unit -5.0 V -2.5 V
Mean Insertion Loss dB -4.9 -5.0
Mean Loss Flatness dB 0.3 0.6
Peak Amplitude Error dBpp 1.2 1.3
RMS Amplitude Error dB 0.25 0.30
Peak Phase Shift Error deg -3 / +7 -3 / +7
RMS Phase Shift Error deg 3.0 2.7
Loss Temp. Variation dB/°C -0.0048 -0.0052
Ave Input Return Loss dB -16 -15
Ave Output Return Loss dB -15 -15
TGP1439-EPU
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 4
Advance Product Information
June 29, 2001
Mechanical Characteristics
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
Units: millimeters
Thickness: 0.1016
Chip size tolerance: +/- 0.0508
Vcntl = -5.0 V to -2.5 V
Passive device, RF IN and RF OUT designators for reference only
Bond Pad #1 (RF IN) 0.100 x 0.150
Bond Pad #2 (RF OUT) 0.100 x 0.150
Bond Pad #3 (180º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #4 (180º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #5 (90º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #6 (90º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #7 (45º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #8 (45º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #9 (22.5º Bit ON: V= Vcntl) 0.100 x 0.100
Bond Pad #10 (22.5º Bit ON: V= 0.0V) 0.100 x 0.100
Bond Pad #11 (11.25º Bit ON: V= Vcntl) 0.100 x 0.100
0.000
0.000
0.354
0.750
1.693
0.639
0.354
0.769
1.020
1.150
1.490
0.412
0.542
1.102
1.234
12
4
35
6810
7911
TGP1439-EPU
Note: To turn phase bits off, apply the opposite condition. For example to
turn Phase bit 180° OFF, Bond Pad 3 = 0.0V and Bond Pad 4 = Vcntl.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 5
Advance Product Information
June 29, 2001
Chip Assembly and Bonding Diagram
Reflow process assembly notes:
•=AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
•=alloy station or conveyor furnace with reducing atmosphere
•=no fluxes should be utilized
•=coefficient of thermal expansion matching is critical for long-term reliability
•=storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
•=vacuum pencils and/or vacuum collets preferred method of pick up
•=avoidance of air bridges during placement
•=force impact critical during auto placement
•=organic attachment can be used in low-power applications
•=curing should be done in a convection oven; proper exhaust is a safety concern
•=microwave or radiant curing should not be used because of differential heating
•=coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
•=thermosonic ball bonding is the preferred interconnect technique
•=force, time, and ultrasonics are critical parameters
•=aluminum wire should not be used
•=discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
•=maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommend 500
Ω
ΩΩ
Ω
series resistance
on the control lines
TGP1439-EPU
