2N3055A - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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. . . PowerBase complementary transistors designed for high power audio, stepping

motor and other linear applications. These devices can also be used in power

switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or

for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955.

•Current–Gain — Bandwidth–Product @ IC = 1.0 Adc

fT= 0.8 MHz (Min) – NPN

= 2.2 MHz (Min) – PNP

•Safe Operating Area — Rated to 60 V and 120 V, Respectively

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

2N3055A

MJ2955A

ÎÎÎÎ

MJ15015

MJ15016

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎ

120

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCBO

ÎÎÎÎ

100

ÎÎÎÎ

200

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage Base

Reversed Biased

ÎÎÎÎÎ

VCEV

ÎÎÎÎ

100

ÎÎÎÎ

200

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎ

7.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

7.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎ

115

0.65

ÎÎÎÎ

180

1.03

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Max

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎ

1.52

ÎÎÎÎ

0.98

ÎÎÎ

C/W

*Indicates JEDEC Registered Data. (2N3055A)

200

00 25 50 75 100 125 150 175 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (

MJ15015

MJ15016

P , AVERAGE POWER DISSIPATION (W)

D(AV)

150

100

50 2N3055A

MJ2955A

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N3055A/D

 Motorola, Inc. 1995



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







*Motorola Preferred Device

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60, 120 VOLTS

115, 180 WATTS

CASE 1–07

TO–204AA

(TO–3)



REV 1

   

2Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Collector–Emitter Sustaining Voltage 2N3055A, MJ2955A

(IC = 200 mAdc, IB = 0) MJ15015, MJ15016

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

120

ÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, VBE(off) = 0 Vdc) 2N3055A, MJ2955A

(VCE = 60 Vdc, VBE(off) = 0 Vdc) MJ15015, MJ15016

ÎÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

0.7

0.1

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Collector Cutoff Current 2N3055A, MJ2955A

(VCEV = Rated Value, VBE(off) = 1.5 Vdc) MJ15015, MJ15016

ÎÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

5.0

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, 2N3055A, MJ2955A

TC = 150

C) MJ15015, MJ15016

ÎÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

6.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current 2N3055A, MJ2955A

(VEB = 7.0 Vdc, IC = 0) MJ15015, MJ15016

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

5.0

0.2

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

(t = 0.5 s non–repetitive) 2N3055A, MJ2955A

(VCE = 60 Vdc) MJ15015, MJ15016

ÎÎÎÎÎ

IS/b

ÎÎÎÎ

1.95

3.0

ÎÎÎÎ

—

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 4.0 Adc, VCE = 2.0 Vdc)

(IC = 4.0 Adc, VCE = 4.0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎÎ

5.0

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 400 mAdc)

(IC = 10 Adc, IB = 3.3 Adc)

(IC = 15 Adc, IB = 7.0 Adc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.1

3.0

5.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 4.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎ

0.7

ÎÎÎÎ

1.8

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product 2N3055A, MJ15015

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) MJ2955A, MJ15016

ÎÎÎÎÎ

ÎÎÎÎ

0.8

2.2

ÎÎÎÎ

6.0

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

ÎÎÎÎÎ

Cob

ÎÎÎÎ

600

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*SWITCHING CHARACTERISTICS (2N3055A only)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

RESISTIVE LOAD

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 4.0 Adc,

IB1 = IB2 = 0.4 Adc,

tp = 25 µs Duty Cycle

ÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

4.0

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎ

IB1 = IB2 = 0.4 Adc,

tp = 25 µs Duty Cycle

ÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

3.0

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎ

p = 25 µs Duty Cycle

ÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

6.0

ÎÎÎÎ

µs

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2%.

*Indicates JEDEC Registered Data. (2N3055A)

   

Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 2. DC Current Gain

200

0.2 IC, COLLECTOR CURRENT (AMP)

20.3 0.5 0.7 1 2 3 5 7 15

100

hFE, DC CURRENT GAIN

TJ = 150

–55

VCE = 4.0 V

Figure 3. Collector Saturation Region

2.8

0.005 IB, BASE CURRENT (AMP)

00.01 0.02 0.05 0.1 0.2 0.5 1 2 5

1.6

0.8

0.4

IC = 1 A

TJ = 25

4 A

2.4

1.2

8 A

f, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

3.5

0.2

IC, COLLECTOR CURRENT (AMP)

0.3 0.5 0.7 1 2 3 5 7 20

2.5

1.5

0.5

TC = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

Figure 4. “On” Voltages

VBE(on) @ VCE = 4 V

0.1

IC, COLLECTOR CURRENT (AMPS)

0.2 0.3 0.5 1.0 2.0

5.0

2.0

1.0

MJ2955A

MJ15016

Figure 5. Current–Gain — Bandwidth Product

2N3055A

MJ15015

Figure 6. Switching Times Test Circuit

(Circuit shown is for NPN)

+13 V 25

–11 V

Ω

–5 V

1N6073

SCOPE

VCC

+30 V

7.5

Ω

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

0.2

Figure 7. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

0.7

0.5

0.1 0.3 0.5 0.7 1 2 3 7 15

VCC = 30 V

IC/IB = 10

TJ = 25

0.3

0.2

5 10

   

4Motorola Bipolar Power Transistor Device Data

0.2

Figure 8. Turn–Off Times

IC, COLLECTOR CURRENT (AMPS)

0.1

0.5

0.1 0.3 0.5 0.7 1 3 5 15

VCC = 30

IC/IB = 10

IB1 = IB2

TJ = 25

0.3

t, TIME ( s)

0.7

0.2

7 10

400

1.0

Figure 9. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

20 20 50 100 200 500 10002.0 5.0 10

C, CAPACITANCE (pF)

200

100

TJ = 25

Cib

Cob

2N3055A

MJ15015

MJ2955A

MJ15016

COLLECTOR CUT–OFF REGION

10,000

+0.2

Figure 10. 2N3055A, MJ15015

VBE, BASE–EMITTER VOLTAGE (VOLTS)

1000

100

1.0

, COLLECTOR CURRENT ( A)

0.1

0.01 +0.1 0 –0.1 –0.2 –0.3 –0.4 –0.5

VCE = 30 V

TJ = 150

100

REVERSE FORWARD

IC = ICES

NPN

1000

–0.2

Figure 11. MJ2955A, MJ15016

VBE, BASE–EMITTER VOLTAGE (VOLTS)

100

1.0

0.1

, COLLECTOR CURRENT ( A)

0.01

0.001 –0.1 0 +0.1 +0.2 +0.3

VCE = 30 V

TJ = 150

100

REVERSE FORWARD

IC = ICES

PNP

+0.4 +0.5

Figure 12. Forward Bias Safe Operating Area

2N3055A, MJ2955A

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

110 20 10060

IC, COLLECTOR CURRENT (AMPS)

1 ms

100

100 ms

Figure 13. Forward Bias Safe Operating Area

MJ15015, MJ15016

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

0.215 20 10060

2.0

IC, COLLECTOR CURRENT (AMP)

0.1 ms

100 ms

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

1.0

0.5

30 120

1.0 ms

BONDING WIRE LIMIT

THERMAL LIMIT @ TC = 25

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe Operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figures 12 and 13 is based on TC = 25

TJ(pk) is variable depending on power level. Second break-

down pulse limits are valid for duty cycles to 10% but must be

derated for temperature according to Figure 1.

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

   

6Motorola Bipolar Power Transistor Device Data

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2N3055A/D

*2N3055A/D*

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