Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC617LP3 / 617LP3E v02.0610 Amplifiers - Low Noise - SMT 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Typical Applications Features The HMC617LP3(E) is ideal for: Noise Figure: 0.5 dB * Cellular/3G and LTE/WiMAX/4G Gain: 16 dB * BTS & Infrastructure Output IP3: +37 dBm * Repeaters and Femtocells Single Supply: +3V to +5V * Public Safety Radio 50 Ohm Matched Input/Output * Access Points 16 Lead 3x3mm QFN Package: 9 mm2 Functional Diagram General Description The HMC617LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 550 and 1200 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 16 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC617LP3(E) shares the same package and pinout with the HMC618LP3(E) 1.7 - 2.2 GHz LNA. The HMC617LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC617LP3(E) offers improved noise figure versus the previously released HMC372LP3(E) and the HMC376LP3(E). Electrical Specifications, TA = +25 C, Rbias = 3.92k Ohms* Parameter Vdd = +3 Vdc Min. Frequency Range Gain Typ. Max. Min. 698 - 960 13 Gain Variation Over Temperature Vdd = +5 Vdc Typ. Max. Min. 550 - 1200 16 11 0.003 Min. 13.5 16 11.5 0.005 550 - 1200 MHz 16 dB 0.005 22 22 17 dB Output Return Loss 12 14 12 15 dB 20 dBm 20.5 dBm Saturated Output Power (Psat) 17 Output Third Order Intercept (IP3) 31 Supply Current (Idd) 30 16 18.5 16.5 30 16.5 21 30 45 21 37 45 88 0.6 dB/ C 28 12.5 0.85 Units Input Return Loss 16 0.55 Max. 0.5 14 1.1 Typ. Noise Figure Output Power for 1 dB Compression (P1dB) 0.5 Max. 698 - 960 15 0.003 0.8 Typ. 1.1 37 115 88 dB dBm 115 mA * Rbias resistor sets current, see application circuit herein 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Broadband Gain & Return Loss [1] [2] 25 S21 20 15 10 +25C +85C - 40C 18 5 0 -5 GAIN (dB) Vdd=5V Vdd=3V S22 -10 16 14 -15 S11 -20 12 -25 -30 0.2 10 0.4 0.6 0.8 1 1.2 1.4 FREQUENCY (GHz) 1.6 1.8 Gain vs. Temperature [2] 20 -5 RETURN LOSS (dB) 0 +25C +85C - 40C 16 14 12 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.1 1.2 1.3 +25 C +85 C - 40 C -10 -15 -20 1.3 0.5 0 0 -5 -5 -10 -15 +25 C +85 C - 40 C -20 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 Reverse Isolation vs. Temperature [1] ISOLATION (dB) RETURN LOSS (dB) 0.8 0.9 1 FREQUENCY (GHz) -30 0.6 Output Return Loss vs. Temperature [1] +25 C +85 C -40 C -10 -15 -20 -25 -25 -30 -30 0.5 0.7 -25 10 0.5 0.6 Input Return Loss vs. Temperature [1] 22 18 GAIN (dB) 0.5 2 Amplifiers - Low Noise - SMT 22 20 RESPONSE (dB) 7 Gain vs. Temperature [1] 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 3.92K 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 [2] Vdd = 3V, Rbias = 3.92K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-2 HMC617LP3 / 617LP3E v02.0610 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Noise Figure vs. Temperature [1] [2] [4] P1dB vs. Temperature [1] [2] 24 22 Vdd=5V Vdd=3V 0.8 +85C 0.6 Vdd=5V 20 P1dB (dBm) NOISE FIGURE (dB) 1 +25 C 0.4 18 Vdd=3V 16 14 +25 C +85 C - 40 C -40C 0.2 12 0 0.5 10 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 0.5 Psat vs. Temperature [1] [2] 22 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 1.3 1.2 1.3 48 Vdd=5V +25 C +85 C - 40 C 44 20 Vdd=5V 40 IP3 (dBm) 18 0.6 Output IP3 vs. Temperature [1] [2] 24 Psat (dBm) Amplifiers - Low Noise - SMT 1.2 Vdd=3V 16 36 32 14 +25 C +85 C -40 C 12 28 Vdd=3V 10 0.5 24 0.6 0.7 0.8 0.9 1 FREQUENCY (GHz) 1.1 1.2 0.5 1.3 0.7 0.8 0.9 1 1.1 FREQUENCY (GHz) Output IP3 and Idd vs. Supply Voltage @ 700 MHz [3] Output IP3 and Idd vs. Supply Voltage @ 900 MHz [3] 40 140 38 120 38 120 36 100 36 100 34 80 34 80 32 60 32 60 30 40 30 40 28 20 28 20 0 26 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 IP3 (dBm) 140 2.7 0 3.1 3.5 VOLTAGE SUPPLY (V) 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) [1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K [3] Rbias = 3.92K [4] Measurement reference plane shown on evaluation PCB drawing. 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Idd (mA) 40 Idd (mA) IP3 (dBm) 0.6 HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 40 Pout Gain PAE 30 20 10 0 40 Pout Gain PAE 30 20 10 0 -10 -10 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -18 4 -16 -14 -12 -10 -8 -6 -4 -2 0 INPUT POWER (dBm) INPUT POWER (dBm) Power Compression @ 900 MHz [2] Power Compression @ 900 MHz [1] 50 Pout (dBm), GAIN (dB), PAE (%) 50 Pout (dBm), GAIN (dB), PAE (%) Amplifiers - Low Noise - SMT 50 50 40 Pout Gain PAE 30 20 10 0 -10 40 Pout Gain PAE 30 20 10 0 -10 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 -16 -14 -12 -10 INPUT POWER (dBm) -6 -4 -2 0 2 4 Gain, Power & Noise Figure vs. Supply Voltage @ 900 MHz [3] 1.2 24 GAIN P1dB 0.2 Noise Figure GAIN (dB) & P1dB (dBm) 0.4 GAIN P1dB 22 0.8 20 0.6 18 0.4 0.2 16 NOISE FIGURE (dB) 0.6 NOISE FIGURE (dB) 0.8 1 24 1 20 16 -8 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 700 MHz [3] GAIN (dB) & P1dB (dBm) 7 Power Compression @ 700 MHz [2] Power Compression @ 700 MHz [1] Noise Figure 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 14 2.7 [2] Vdd = 3V, Rbias = 3.92K 3.5 3.9 4.3 4.7 5.1 0 5.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) [1] Vdd = 5V, Rbias = 3.92K 3.1 [3] Rbias = 3.92K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-4 HMC617LP3 / 617LP3E v02.0610 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Gain, Noise Figure & Rbias @ 700 MHz Output IP3 vs. Rbias @ 700 MHz 38 36 32 GAIN (dB) IP3 (dBm) 34 Vdd=3V Vdd=5V 30 28 19 1.2 18 1 17 0.8 16 0.6 15 26 0.4 Vdd=5V Vdd=3V 0.2 14 24 22 500 0 13 10000 1000 500 1000 10000 Rbias (Ohms) Rbias(Ohms) Output IP3 vs. Rbias @ 900 MHz Gain, Noise Figure & Rbias @ 900 MHz 40 17 1 16 0.8 38 36 GAIN (dB) IP3 (dBm) 32 Vdd=3V Vdd=5V 30 28 Vdd=5V Vdd=3V 15 0.6 14 0.4 13 0.2 24 22 0 12 1000 500 10000 500 1000 10000 Rbias (Ohms) Rbias(Ohms) Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd (V) 3V 5V Rbias Min 1K [1] 0 Max Open Circuit Open Circuit Recommended Idd (mA) 2.7k 24 3.92k 30 4.7k 33 10k 40 820 65 2k 78 3.92k 88 10k 90 [1] With Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com NOISE FIGURE (dB) 34 26 7-5 NOISE FIGURE (dB) Amplifiers - Low Noise - SMT 40 HMC617LP3 / 617LP3E v00.0807 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Drain Bias Voltage (Vdd) +6V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 C Continuous Pdiss (T= 85 C) (derate 8.33 mW/C above 85 C) 0.54 W Thermal Resistance (channel to ground paddle) 120 C/W Storage Temperature -65 to +150 C Operating Temperature -40 to +85 C Vdd (V) Idd (mA) 2.7 18 3.0 30 3.3 41 4.5 77 5.0 88 5.5 97 Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 7 Amplifiers - Low Noise - SMT Typical Supply Current vs. Vdd (Rbias = 3.92k) Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC617LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC617LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] 617 XXXX 617 XXXX [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-6 HMC617LP3 / 617LP3E v02.0610 Amplifiers - Low Noise - SMT 7 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz Pin Descriptions Function Description 1, 3 - 5, 7, 9, 10, 12 - 14, 16 Pin Number N/C No connection required. These pins may be connected to RF/ DC ground without affecting performance. 2 RFIN This pin is matched to 50 Ohms. 6 GND This pin and ground paddle must be connected to RF./DC ground. 11 RFOUT This pin is matched to 50 Ohms. 8 RES This pin is used to set the DC current of the amplifier by selection of external bias resistor. See application circuit. 15 Vdd Power Supply Voltage. Choke inductor and bypass capacitors are required. See application circuit. Interface Schematic Application Circuit 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 Amplifiers - Low Noise - SMT Evaluation PCB List of Materials for Evaluation PCB 118357 Item J1, J2 Description PCB Mount SMA RF Connector J3, J4 DC Pin C1 10nF Capacitor, 0402 Pkg. C2 1000 pF Capacitor, 0603 Pkg. C3 0.47F Capacitor, 0603 Pkg. L1 18 nH, Inductor, 0603 Pkg. L2 15 nH, Inductor, 0402 Pkg. R1 3.92K Ohm Resistor, 0402 Pkg. U1 HMC617LP3(E) Amplifier PCB [2] 112580 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7-8 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Analog Devices Inc.: HMC617LP3E 118357-HMC617LP3 HMC617LP3ETR