KA5x02xx-SERIES KA5H0265RC, KA5M0265R, KA5L0265R, KA5H02659RN/KA5M02659RN, KA5H0280R, KA5M0280R Power Switch Features Description * * * * * * * * * The Power Switch product family is specially designed for an off-line SMPS with minimal external components. The Power Switch consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry-compared to discrete MOSFET and controller or RCC switching converter solution. The Power Switch can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. Precision Fixed Operating Frequency (100/67/50kHz) Low Start-up Current (Typ. 100uA) Pulse by Pulse Current Limiting Over Load Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode TO-220F-4L 8-DIP TO220-5L 1 1 1. GND 2. Drain 3. Vcc 4. FB 1.6.7.8. Drain 2. GND 3. Vcc 4. FB 5. NC 1 1. Drain 2. GND 3. Vcc 4. FB 5. S/S Internal Block Diagram VCC 32V 5V Vref Internal bias DRAIN SFET Good logic * Soft Start OSC 5V S uA R - FB 5A 1mA 2.5R 1R 9V 0.1V - S Thermal S/D + 27V L.E.B + + 7.5V - Q R GND Q Power on reset OVER VOLTAGE S/D * KA5H0265RC (c)2003 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: KA5L0265R/D KA5X02XX-SERIES Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Characteristic Symbol Value Unit VDGR 650 V VGS 30 V KA5x0265xRx Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage (1) IDM 8.0 ADC Continuous Drain Current (TC=25C) ID 2.0 ADC Continuous Drain Current (TC=100C) ID 1.3 ADC EAS 68 mJ VCC,MAX 30 V VFB -0.3 to VSD V PD 42 W Darting 0.33 W/C Operating Junction Temperature. TJ +160 C Operating Ambient Temperature. TA -25 to +85 C TSTG -55 to +150 C VDGR 800 V VGS 30 V IDM 8.0 ADC Continuous Drain Current (TC=25C) ID 2.0 ADC Continuous Drain Current (TC=100C) ID 1.3 ADC Drain Current Pulsed Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Storage Temperature Range. KA5x0280R Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed (1) Single Pulsed Avalanche Energy Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation (2) EAS 90 mJ VCC,MAX 30 V VFB -0.3 to VSD V PD 35 W Darting 0.28 W/C Operating Junction Temperature. TJ +160 C Operating Ambient Temperature. TA -25 to +85 C TSTG -55 to +150 C Storage Temperature Range. Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25C www.onsemi.com 2 KA5X02XX-SERIES Electrical Characteristics (SFET Part) (Ta=25C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50A 650 - - V VDS=Max. Rating, VGS=0V - - 50 A Zero Gate Voltage Drain Current IDSS VDS=0.8Max. Rating, VGS=0V, TC=125C - - 200 A RDS(ON) VGS=10V, ID=0.5A - 5.0 6.0 gfs VDS=50V, ID=0.5A 1.5 2.5 - S - 550 - KA5x0265xRx Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn on Delay Time td(on) Rise Time tr Turn Off Delay Time td(off) Fall Time tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature) - 38 - - 17 - pF - 20 - - 15 - - 55 - - 25 - - - 35 - 3 - - 12 - 800 - - V nS nC KA5x0280R Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Static Drain-Source on Resistance (Note) Forward Transconductance VDS=Max. Rating, VGS=0V - - 50 A VDS=0.8Max. Rating, VGS=0V, TC=125C - - 200 A RDS(ON) VGS=10V, ID=0.5A - 5.6 7.0 gfs VDS=50V, ID=0.5A 1.5 2.5 - S - 250 - (Note) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn on Delay Time td(on) Rise Time Turn Off Delay Time VGS=0V, ID=50A tr td(off) Fall Time tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature) Note: 1. Pulse test: Pulse width 300S, duty cycle 2% 1 2. S = --R www.onsemi.com 3 - 52 - - 25 - - 21 - - 28 - - 77 - - 24 - - - 60 - 15 - - 20 - pF nS nC KA5X02XX-SERIES Electrical Characteristics (Control Part) (Continued) (Ta=25C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB=GND 14 15 16 V Stop Threshold Voltage VSTOP VFB=GND 8.2 8.8 9.4 V Initial Accuracy FOSC KA5H0265xRx KA5H0280R 90 100 110 kHz Initial Accuracy FOSC KA5M0265xRx KA5M0280R 61 67 73 kHz 45 50 55 kHz - 5 10 % OSCILLATOR SECTION Initial Accuracy FOSC KA5L0265R Frequency Change With Temperature (2) F/T -25C Ta +85C Maximum Duty Cycle Dmax KA5H0265xRx KA5H0280R 62 67 72 % Maximum Duty Cycle Dmax KA5M0265xRx KA5M0280R KA5L0265R 72 77 82 % FEEDBACK SECTION Feedback Source Current IFB Ta=25C, 0V Vfb 3V 0.7 0.9 1.1 mA Shutdown Feedback Voltage VSD Vfb 6.5V 6.9 7.5 8.1 V 4 5 6 A 4.7 5.0 5.3 V 0.8 1.0 1.2 mA 4.80 5.00 5.20 V - 0.3 0.6 mV/C Shutdown Delay Current Idelay Ta=25C, 5V Vfb VSD SOFT START SECTION Soft Start Voltage VSS Soft Start Current ISS KA5H0265RC REFERENCE SECTION Output Voltage (1) Temperature Stability Vref (1)(2) Vref/T Ta=25C -25C Ta +85C CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit IOVER KA5x02659RN 0.79 0.9 1.01 A Peak Current Limit IOVER KA5x0265Rx KA5x0280R 1.05 1.2 1.34 A VOVP VCC 24V 25 27 29 V 140 160 - C PROTECTION SECTION Over Voltage Protection Thermal Shutdown Temperature (1) TSD - TOTAL DEVICE SECTION Start-up Current Operating Supply Current (Control Part Only) ISTART VCC=14V - 100 170 A IOPR VCC 28 - 7 12 mA Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process www.onsemi.com 4 KA5X02XX-SERIES Typical Performance Characteristics (These characteristic graphs are normalized at Ta=25C) Fig.2 Feedback Source Current Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 0 25 Temperature [C] Fig.3 Operating Current 1.1 125 150 1.05 IIpeak over 1 0.95 0.9 0.85 0 25 50 75 0.8 -25 100 125 150 0 25 50 75 100 125 150 Temperature [C] Figure 4. Peak Current Limit Figure 3. Operating Supply Current Fig.5 Start up Current Fig.6 Start Threshold Voltage 1.15 1.1 1.3 1.05 1.1 Istart Vstart 1 0.9 0.95 0.7 0.5 -25 100 Fig.4 Max Inductor Current Temperature [C] 1.5 75 Figure 2. Feedback Source Current Figure 1. Operating Frequency 1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 50 Temperature [C] 0.9 0 25 50 75 100 125 150 Temperature [C] 0.85 -25 0 25 50 75 100 125 150 Temperature [C] Figure 6. Start Threshold Voltage Figure 5. Start up Current www.onsemi.com 5 KA5X02XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25C) Fig.7 Stop Threshold Voltage Fig.8 Maximum Duty Cycle 1.15 1.15 1.1 1.1 1.05 1.05 Vstop 1 Dmax 1 0.95 0.95 0.9 0.9 0.85 -25 0 25 50 75 0.85 -25 100 125 150 0 Temperature [C] 50 75 100 125 150 Figure 8. Maximum Duty Cycle Figure 7. Stop Threshold Voltage Fig.9 Vcc Zener Voltage 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 25 Temperature [C] Fig.10 Shutdown Feedback Voltage 1.15 1.1 1.05 Vsd 1 0.95 0.9 0 25 50 75 0.85 -25 100 125 150 0 Temperature [C] 50 75 100 125 150 Figure 10. Shutdown Feedback Voltage Figure 9. VCC Zener Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 25 Temperature [C] Fig.12 Over Voltage Protection 1.15 1.1 1.05 Vovp 1 0.95 0.9 0 25 50 75 100 125 150 Temperature [C] 0.85 -25 0 25 50 75 100 125 150 Temperature [C] Figure 12. Over Voltage Protection Figure 11. Shutdown Delay Current www.onsemi.com 6 KA5X02XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25C) Fig.13 Soft Start Voltage Fig.14 Drain Source Turn-on Resistance 1.15 2.5 1.1 1.05 2 Vss 1 1.5 0.95 Rdson ( )1 0.9 0.5 0.85 -25 0 25 50 75 100 125 150 Temperature [C] 0 -25 0 25 50 75 100 125 150 Temperature [C] Figure 14. Static Drain-Source on Resistance Figure13. Soft Start Voltage www.onsemi.com 7 KA5X02XX-SERIES Package Dimensions TO-220F-4L www.onsemi.com 8 KA5X02XX-SERIES Package Dimensions (Continued) TO-220F-4L(Forming) www.onsemi.com 9 KA5X02XX-SERIES Package Dimensions (Continued) 8-DIP www.onsemi.com 10 KA5X02XX-SERIES Package Dimensions (Continued) TO-220-5L www.onsemi.com 11 KA5X02XX-SERIES Package Dimensions (Continued) TO-220-5L(Forming) www.onsemi.com 12 KA5X02XX-SERIES Ordering Information Product Number Marking Code BVDSS FOSC RDS(on) 5H0265RC 650V 100kHz 5 5M0265R 650V 67kHz 5 5L0265R 650V 50kHz 5 Marking Code BVDSS FOSC RDS(on) 5H0280R 800V 100kHz 5.6 5M0280R 800V 67kHz 5.6 Package Marking Code BVDSS FOSC RDS(on) KA5H02659RN 8-DIP 5H02659R 650V 100kHz 5 KA5M02659RN 8-DIP 5M02659R 650V 67kHz 5 KA5H0265RCTU KA5H0265RCYDTU KA5M0265RTU KA5M0265RYDTU KA5L0265RTU KA5L0265RYDTU Product Number KA5H0280RTU KA5H0280RYDTU KA5M0280RTU KA5M0280RYDTU Product Number Package TO-220-5L TO-220-5L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TU : Non Forming Type YDTU : Forming Type www.onsemi.com 13 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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