VS-16CDH02-M3
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Revision: 10-Feb-15 1Document Number: 95812
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Hyperfast Rectifier, 2 x 8 A FRED Pt®
FEATURES
Hyperfast recovery time, reduced Qrr, and soft
recovery
175 °C maximum operating junction temperature
Specified for output and snubber operation
Low forward voltage drop
Low leakage current
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Meets JESD 201 class 2 whisker test
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, telecom, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
PRODUCT SUMMARY
Package TO-263AC (SMPD)
IF(AV) 2 x 8 A
VR200 V
VF at IF0.77 V
trr 27 ns
TJ max. 175 °C
Diode variation Dual die
Top View Bottom View
TO-263AC (SMPD)
K
1
2
K
Cathode Anode 2
Anode 1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM 200 V
Average rectified forward current per device IF(AV) Tsolder pad = 155 °C 16
A
per diode 8
Non-repetitive peak surge current per device IFSM TJ = 25 °C, 6 ms square pulse 190
per diode 100
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VRIR = 100 μA 200 - -
V
Forward voltage, per diode VF
IF = 8 A - 0.93 1.03
IF = 8 A, TJ = 150 °C - 0.77 0.87
Reverse leakage current, per diode IR
VR = VR rated - - 2 μA
TJ = 150 °C, VR = VR rated - 6 100
Junction capacitance, per diode CTVR = 200 V - 23 - pF
VS-16CDH02-M3
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Revision: 10-Feb-15 2Document Number: 95812
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 27 -
ns
IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25
TJ = 25 °C
IF = 8 A,
dIF/dt = 200 A/μs,
VR = 160 V
-23-
TJ = 125 °C - 35 -
Peak recovery current IRRM
TJ = 25 °C - 2.8 - A
TJ = 125 °C - 5 -
Reverse recovery charge Qrr
TJ = 25 °C - 30 - nC
TJ = 125 °C - 90 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range TJ, TStg -55 - +175 °C
Thermal resistance, per diode
junction to solder pad RthJ-Sp -1.82.5°C/W
Approximate weight 0.55 g
0.02 oz.
Marking device Case style TO-263AC (SMPD) 16CDH02
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
IF- Instantaneous Forward Current (A)
VF- Forward Voltage Drop (V)
TJ= 150 °C
TJ= 25 °C
TJ= 175 °C
TJ= 125 °C
0.0001
0.001
0.01
0.1
1
10
100
050100150200
IR- Reverse Current (μA)
VR- Reverse Voltage (V)
TJ= 175 °C
TJ= 125 °C
TJ= 25 °C
TJ= 150 °C
VS-16CDH02-M3
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Revision: 10-Feb-15 3Document Number: 95812
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
10
100
050100150200
CT- Junction Capacitance (pF)
VR- Reverse Voltage (V)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
ZthJC - Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
145
150
155
160
165
170
175
180
0123456789
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
Square wave (D = 0.50)
80 % rated VRapplied
See note (1)
DC
0
2
4
6
8
10
12
02468101214
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS limit
VS-16CDH02-M3
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Revision: 10-Feb-15 4Document Number: 95812
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Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt
Fig. 9 - Reverse Recovery Waveform and Definitions
5
10
15
20
25
30
35
40
45
100 1000
trr (ns)
dIF/dt (A/μs)
125 °C
25 °C
0
20
40
60
80
100
120
140
160
180
100 1000
Qrr (nC)
dIF/dt (A/μs)
125 °C
25 °C
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-16CDH02-M3
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Revision: 10-Feb-15 5Document Number: 95812
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-16CDH02-M3/I 2000 2000 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95604
Part marking information www.vishay.com/doc?95566
Packaging information www.vishay.com/doc?88869
2- Current rating (16 A)
3- Circuit conguration:
4- D = SMPD package
5- Process type,
H = hyperfast recovery
6- Voltage code (02 = 200 V)
7- -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Device code
51 32 4 6 7
VS- 16 C D H 02 -M3
1-Vishay Semiconductors product
C = common cathode
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 02-Jun-14 1Document Number: 95604
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-263AC (SMPD)
DIMENSIONS in inches (millimeters)
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Mounting Pad Layout
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TO-263AC (SMPD)
120
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