Revised: 08/08/17
Specifications are subject to change without notice.
©2017 Littelfuse, Inc
Thyristors
8 Amp High Temperature Sensitive & Standard SCRs
SJxx08xSx & SJxx08xx Series
SJxx08xSx & SJxx08xx Series
Description
This SJxx080xx high temperature SCR series is ideal for
uni-directional switch applications such as phase control
in heating, motor speed controls, converters/rectifiers and
capacitive discharge ignitions.
These SCRs have a low gate current trigger level of 6mA
or 15mA maximum at approximately 1.5V, with a sensitive
version of this series having a gate trigger current less than
200µA. The sensitive gate SCR version is easily triggered
by sense coils, proximity switches, and microprocessors.
Features & Benefits
• Voltage capability up
to 600 V
• Surge capability up
to 100 A at 60 Hz half
cycle
• 150°C maximum junction
temperature
• Halogen free and RoHS
compliant
Main Features
Symbol Value Unit
IT(RMS) 8 A
VDRM /VRRM 400 or 600 V
IGT 0.2 to 15 mA
Schematic Symbol
Applications
Typical applications includes capacitive discharge system
for motorcycle engine CDI, portable generator engine
ignition, strobe lights and nailers, as well as generic
rectifiers, battery voltage regulators and converters. Also
controls for power tools, home/brown goods and white
goods appliances.
AK
G
RoHS
Absolute Maximum Ratings — Sensitive SCRs
Symbol Parameter Test Conditions Value Unit
IT(RMS) RMS on-state current TC = 120°C 8 A
IT(AV) Average on-state current TC = 120°C 5.1 A
ITSM Peak non-repetitive surge current
single half cycle; f = 50 Hz;
TJ (initial) = 25°C 83
A
single half cycle; f = 60 Hz;
TJ (initial) = 25°C 100
I2t I2t Value for fusing tp = 8.3 ms 41 A2s
di/dt Critical rate of rise of on-state current f = 60 Hz, TJ = 150 °C 70 A/μs
IGM Peak gate current Pw=20 μs, TJ = 150 °C 0.5 A
PG(AV) Average gate power dissipation TJ = 150 °C 0.1 W
Tstg Storage temperature range -40 to 150 °C
TJOperating junction temperature range -40 to 150 °C
VDSM/VRSM Peak non-repetitive blocking voltage Pw=100 μs VDRM/VRRM+10 0 V
Revised: 07/31/17
Specifications are subject to change without notice.
©2017 Littelfuse, Inc
Thyristors
8 Amp High Temperature Sensitive & Standard SCRs
SJxx08xSx & SJxx08xx Series
Absolute Maximum Ratings — Standard SCRs
Symbol Parameter Test Conditions Value Unit
IT(RMS) RMS on-state current TC = 125 °C 8 A
IT(AV) Average on-state current TC = 125 °C 5.1 A
ITSM Peak non-repetitive surge current
single half cycle; f = 50 Hz;
TJ (initial) = 25 °C 83
A
single half cycle; f = 60 Hz;
TJ (initial) = 25 °C 100
I2tI2t Value for fusing tp = 8.3 ms 41 A2s
di/dt Critical rate-of-rise of on-state current f = 60 Hz TJ = 150 °C 100 A/μs
IGM Peak gate current Pw=20 μs, TJ = 150°C 0.5 A
PG(AV) Average gate power dissipation TJ = 150 °C 0.1 W
Tstg Storage temperature range -40 to 150 °C
TJOperating junction temperature range -40 to 150 °C
VDSM/VRSM Peak non-repetitive blocking voltage Pw=100 μs VDRM/VRRM+10 0 V
Electrical Characteristics (TJ = 25°C, unless otherwise specified) – Sensitive SCRs
Symbol Test Conditions Value Unit
SJxx08xS2
IGT VD = 6V RL = 100 Ω
MIN. 20 μA
MAX. 200 μA
VGT MAX. 0.8 V
dv/dt VD = VDRM; RGK = 220Ω ; TJ = 125°C MIN. 15 V/μs
VGD
VD = VDRM; RL = 3.3 kΩ; TJ = 125°C MIN. 0.2 V
VD = VDRM; RL = 3.3 kΩ; TJ = 150°C MIN. 0.1 V
VGRM IGR = 10μA MIN. 6 V
IHIT = 20mA (initial) MAX. 6 mA
tqtp=50µs; dv/dt=5V/µs; di/dt=-30A/µs MAX. 130 μs
tgt IG = 2 x IGT; PW = 15µs; IT = 8A TYP. 6 μs
NOTE: xx = voltage
Symbol Test Conditions Value Unit
SJxx08x1 SJxx08x
IGT VD = 12V RL = 60 ΩMAX. 6 15 mA
VGT MAX. 1. 5 1. 5 V
dv/dt VD = VDRM; gate open; TJ = 125°C MIN. 100 200 V/μs
VD = VDRM; gate open; TJ = 150°C 50 120
VGD
VD = VDRM; RL = 3.3 kΩ; TJ = 125°C MIN. 0.2 0.2 V
VD = VDRM; RL = 3.3 kΩ; TJ = 150°C MIN. 0.1 0.1
IHIT = 200mA (initial) MAX. 20 30 mA
tq IT=0.5A; tp=50µs; dv/dt=5V/µs; di/dt=-30A/µs MAX. 30 35 μs
tgt IG = 2 x IGT; PW = 15µs; IT = 8A TYP. 0.5 2 μs
NOTE: xx = voltage
Electrical Characteristics (TJ = 25°C, unless otherwise specified) – Standard SCRs
Revised: 07/31/17
Specifications are subject to change without notice.
©2017 Littelfuse, Inc
Thyristors
8 Amp High Temperature Sensitive & Standard SCRs
SJxx08xSx & SJxx08xx Series
Static Characteristics
Symbol Test Conditions Value Unit
VTM IT = 16A; tp = 380 µs MAX. 1. 6 V
IDRM / IRRM @ VDRM / VRRM
SJxx08xS2
TJ = 25°C 400 - 600V
MAX.
5
μA
TJ = 125°C, RGK = 220Ω400 - 600V 1000
TJ = 150°C, RGK = 220Ω400 - 600V 3000
SJxx08xx
TJ = 25°C 400 - 600V 10
TJ = 125°C 400 - 600V 1000
TJ = 150°C 400 - 600V 3000
Thermal Resistances
Symbol Parameter Value Unit
Rθ(J-C) Junction to case (AC)
SJxx08xS2 1. 2
°C/W
SJxx08xx 1. 2
Note: xx = voltage
Figure 1: Normalized DC Gate Trigger Current
vs. Junction Temperature (Sensitive SCR)
Figure 2: Normalized DC Gate Trigger Current
vs. Junction Temperature (Standard SCR)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-40-15 10 35 60 85 110135 150
R
GK
=1K
R
GK
=220Ω
Junction Temperature (T
J
) -- (°C)
Ratio of IGT / IGT (TJ = 25°C)
Junction Temperature (T
J
) -- (°C)
Ratio of I
GT
/ I
GT
(T
J
= 25°C)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-40-15 10 35 60 85 110 135 150
= 25°C)
0
0.5
1
1.5
2
2.5
-40-15 10 35 60 85 110 135
Ratio of I
H
/ I
H
(T
J
150
SJxx08xx
SJxx08xS2
Junction Temperature (T
J
) -- (°C)
Junction Temperature (T
J
) -- (°C)
Ratio of VGT / VGT (TJ = 25°C)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-40-15 10 35 60 85 110135 150
SJxx08xS2
SJxx08xx
Figure 3: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
Figure 4: Normalized DC Holding Current
vs. Junction Temperature
Revised: 07/31/17
Specifications are subject to change without notice.
©2017 Littelfuse, Inc
Thyristors
8 Amp High Temperature Sensitive & Standard SCRs
SJxx08xSx & SJxx08xx Series
0
5
10
15
20
25
30
35
0.70.8 0.911.11.2 1.31.4 1.51.6 1.7
Intantaneous On-state Current (I
T
) –Amps
Instantaneous On-state Voltage (V
T
) –Volts
SJxx08xx
SJxx08DS2
0
2
4
6
8
10
12
14
0246810
Average On-State Power
[P
D(AV)
] -(Watts)
RMS On-State Current [I T
(RMS)
] -(Amps)
Dissipation
SJxx08xx
SJxx08DS2
Figure 5: On-State Current vs. On-State
Voltage (Typical)
Figure 6: Power Dissipation (Typical) vs. RMS
On-State Current
Figure 7: Maximum Allowable Case Temperature
vs. RMS On-State Current
Figure 8: Maximum Allowable Case Temperature
vs. Average On-State Current
80
90
100
110
120
130
140
150
160
0246810
Maximum Allowable
Case Temperature (TC)-
RMS On-State Current [
I
T
(RMS)] -(Amps)
°C
SJxx08xx
SJxx08DS2
Maximum Allowable
Case Temperature (T
C
)-
Average On -State Current [AV] -(Amps)
°C
80
90
100
110
120
130
140
150
160
0123456
SJxx08xx
SJxx08DS2
Figure 9: Peak Capacitor Discharge Current
10
100
1000
0.5 1.
01
0.0 50.0
Pulse Current Duration (tW) - ms
Peak Discharge Current (ITM) - Amps
ITRM
tW
Revised: 07/31/17
Specifications are subject to change without notice.
©2017 Littelfuse, Inc
Thyristors
8 Amp High Temperature Sensitive & Standard SCRs
SJxx08xSx & SJxx08xx Series
1
10
100
1000
110100 1000
Peak Surge (Non-repetitive)
On-state Current (I
TSM
) – Amps
Surge Current Duration -- Full Cycles
Figure 10: Surge Peak On-State Current vs. Number of Cycles
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS On-State Current: [IT(RMS)]: Maximum Rated
Value at Specified Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
Figure 11: Typical DC Gate Trigger Current with RGK vs.
Junction Temperature (Sensitive SCR)
0.01
0.1
1
10
-40-20 020406080100 120140
I
GT
(mA)
Junction Temperature (T ) --
(°C)
R
GK
=100Ω
R
GK
=470Ω
R
GK
=220Ω
R
GK
=1KΩ
No R
GK
Figure 12: Typical DC Holding Current with RGK vs.
Junction Temperature (Sensitive SCR)
0.1
1
10
-40-20 020406080100 120 140
I
H
(mA)
Junction Temperature (T ) --
(°C)
R
GK
=100Ω
R
GK
=470Ω
R
GK
=220Ω
R
GK
=1KΩ
No R
GK
Figure 13: Typical Static dv/dt with RGK vs. Junction
Temperature (Sensitive SCR)
1
10
100
1000
10000
25 45 65 85 105 125
Static dv/dt (V/μs)
Junction Temperature (T ) --
(°C)
R
GK
=100Ω
R
GK
=470Ω
R
GK
=220Ω
R
GK
=1KΩ
Revised: 07/31/17
Specifications are subject to change without notice.
©2017 Littelfuse, Inc
Thyristors
8 Amp High Temperature Sensitive & Standard SCRs
SJxx08xSx & SJxx08xx Series
Soldering Parameters
Reflow Condition Pb – Free assembly
Pre Heat
- Temperature Min (Ts(min))150°C
- Temperature Max (Ts(max))200°C
- Time (min to max) (ts)60 – 180 secs
Average ramp up rate (Liquidus Temp)
(TL) to peak 5°C/second max
TS(max) to TL - Ramp-up Rate 5°C/second max
Reflow - Temperature (TL) (Liquidus) 217°C
- Time (tL)60 – 150 seconds
Peak Temperature (TP)260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)20 – 40 seconds
Ramp-down Rate 5°C/second max
Time 25°C to peak Temperature (TP)8 minutes Max.
Do not exceed 280°C
Time
Temperature
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
Preheat
P
r
e
h
eat
Ramp-upRamp-up
Ramp-down
R
am
p
-
do
Physical Specifications Environmental Specifications
Test Specifications and Conditions
AC Blocking MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage for 1008 hours
Temperature Cycling
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
Temperature/
Humidity
EIA / JEDEC, JESD22-A101
1008 hours; 160V - DC: 85°C; 85%
rel humidity
High Temp Storage MIL-STD-750, M-1031,
1008 hours; 150°C
Low-Temp Storage 1008 hours; -40°C
Resistance to
Solder Heat MIL-STD-750 Method 2031
Solderability ANSI/J-STD-002, category 3, Test A
Lead Bend MIL-STD-750, M-2036 Cond E
Moisture Sensitivity
Level Level 1, JEDEC-J-STD-020
Terminal Finish 100% Matte Tin-plated
Body Material UL Recognized epoxy meeting
ammability rating V-0
Lead Material Copper Alloy
Design Considerations
Careful selection of the correct component for the
application’s operating parameters and environment will
go a long way toward extending the operating life of the
Thyristor. Good design practice should limit the maximum
continuous current through the main terminals to 75% of
the component rating. Other ways to ensure long life for
a power discrete semiconductor are proper heat sinking
and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge
currents are the main killers of semiconductors. Correct
mounting, soldering, and forming of the leads also help
protect against component damage.
Part Numbering System Part Marking System
CURRENT
08: 8A
SENSITIVITY & TYPE
Sensitive SCR:
S2: 0.2mA
Standard SCR:
1: 6mA
PACKAGE TYPE
V:TO-251 (VPAK)
D:TO-252 (DPAK)
VOLTAGE RATING
40 :
400V
60 :
600V
SJ 60 08 D S2
COMPONENT TYPE
SJ: SCR
(blank): 15mA
YMLDD
®
Date Code Marking
Y: Year Code
M: Month Code
L: Location Code
DD: Calendar Code
SJxx08DS2
Revised: 07/31/17
Specifications are subject to change without notice.
©2017 Littelfuse, Inc
Thyristors
8 Amp High Temperature Sensitive & Standard SCRs
SJxx08xSx & SJxx08xx Series
Dimensions — TO-251AA (V/I-Package) — V/I-PAK Through Hole
Dimension Inches Millimeters
Min Typ Max Min Typ Max
A 0.037 0.040 0.043 0.94 1. 01 1.09
B 0.235 0.242 0.245 5.97 6.15 6.22
C 0.350 0.361 0.375 8.89 9.18 9.53
D 0.205 0.208 0.213 5.21 5.29 5.41
E 0.255 0.262 0.265 6.48 6.66 6.73
F 0.027 0.031 0.033 0.69 0.80 0.84
G 0.087 0.090 0.093 2.21 2.28 2.36
H 0.085 0.092 0.095 2.16 2.34 2.41
I 0.176 0.180 0.184 4.47 4.57 4.67
J 0.018 0.020 0.023 0.46 0.51 0.58
K 0.035 0.037 0.039 0.90 0.95 1. 0 0
L 0.018 0.020 0.023 0.46 0.52 0.58
P 0.042 0.047 0.052 1.06 1.20 1.32
Q 0.034 0.039 0.044 0.86 1. 0 0 1. 11
R 0.034 0.039 0.044 0.86 1. 0 0 1. 11
S 0.074 0.079 0.084 1.86 2.00 2.11
Dimensions — TO-252AA (D-Package) — D-PAK Surface Mount
Dimension Inches Millimeters
Min Typ Max Min Typ Max
A0.037 0.040 0.043 0.94 1. 01 1.09
B 0.235 0.243 0.245 5.97 6.16 6.22
C 0.106 0.108 0.113 2.69 2.74 2.87
D 0.205 0.208 0.213 5.21 5.29 5.41
E 0.255 0.262 0.265 6.48 6.65 6.73
F 0.027 0.031 0.033 0.69 0.80 0.84
G 0.087 0.090 0.093 2.21 2.28 2.36
H 0.085 0.092 0.095 2.16 2.33 2.41
I 0.176 0.179 0.184 4.47 4.55 4.67
J 0.018 0.020 0.023 0.46 0.51 0.58
K0.035 0.037 0.039 0.90 0.95 1. 0 0
L 0.018 0.020 0.023 0.46 0.51 0.58
M 0.000 0.000 0.004 0.00 0.00 0.10
N 0.021 0.026 0.027 0.53 0.67 0.69
O0° 0° 5° 0° 0° 5°
P 0.042 0.047 0.052 1.06 1.20 1.32
Q 0.034 0.039 0.044 0.86 1. 0 0 1. 11
M
O
N
H
J
L
K
.118
3
.063
1.60
.071
1.80
.264
6.71
.264
6.71
.181
4.60
GATE
Anode
Cathode
Anode
T
C
MEASURING POINT
G
I
D
E
A
B
C
F
5.28
.208
5.34
.210
: 0.040 IN
2
AREA
P
Q
Revised: 07/31/17
Specifications are subject to change without notice.
©2017 Littelfuse, Inc
Thyristors
8 Amp High Temperature Sensitive & Standard SCRs
SJxx08xSx & SJxx08xx Series
0.512 (13.0) Arbor
Hole Dia.
XXXXXX
XXXXXX
XXXXXX
DC
XXXXXX
Gate Cathode
Anode
0.63
(16.0)
0.157
(4.0)
0.64
(16.3)
12.99
(330.0)
0.524
(13.3)
0.315
(8.0)
0.059 Dia
(1.5)
*
*Cover tape
Direction of Feed
Dimensions
are in inches
(and millimeters).
DC
DC
TO-252 Embossed Carrier Reel Pack (RP) Specifications
Meets all EIA-481-2 Standards
Product Selector
Part Number Voltage Gate Sensitivity Type Package
400V 600V
SJxx08VS2 X X 0.2mA Sensitive SCR TO-251
SJxx08DS2 X X 0.2mA Sensitive SCR TO-252
SJxx08V X X 15mA Standard SCR TO-251
SJxx08D X X 15mA Standard SCR TO-252
SJxx08V1 X X 6mA Standard SCR TO-251
SJxx08D1 X X 6mA Standard SCR TO-252
Note: xx = Voltage
Packing Options
Part Number Marking Weight Packing Mode Base Quantity
SJxx08DS2TP SJxx08DS2 0.3 g Tube 750 (75 per tube)
SJxx08DS2RP SJxx08DS2 0.3 g Embossed Carrier 2500
SJxx08VS2TP SJxx08VS2 0.4 g Tube 750 (75 per tube)
SJxx08DTP SJxx08D 0.3 g Tube 750 (75 per tube)
SJxx08DRP SJxx08D 0.3 g Embossed Carrier 2500
SJxx08VTP SJxx08V 0.4 g Tube 750 (75 per tube)
SJxx08D1TP SJxx08D1 0.3 g Tube 750 (75 per tube)
SJxx08D1RP SJxx08D1 0.3 g Embossed Carrier 2500
SJxx08V1TP SJxx08V1 0.4 g Tube 750 (75 per tube)
Note: xx = Voltage
Disclaimer Noce - Informaon furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applicaons. Lielfuse products are not designed for, and may not be used in, all applicaons.
Read complete Disclaimer Noce at www.lielfuse.com/disclaimier-electronics.