Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 15
1Publication Order Number:
BZX84C2V4LT1/D
BZX84BxxxLT1G,
BZX84CxxxLT1G Series,
SZBZX84BxxxLT1G,
SZBZX84CxxxLT1G Series
Zener Voltage Regulators
225 mW SOT23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
225 mW Rating on FR4 or FR5 Board
Zener Breakdown Voltage Range 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Tight Tolerance Series Available (See Page 4)
AECQ101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
PbFree Packages are Available
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V0
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
BZX84CxxxLT1G SOT23
(PbFree)
3,000 /
Tape & Reel
BZX84BxxxLT1G SOT23
(PbFree)
3,000 /
Tape & Reel
BZX84CxxxLT3G 10,000 /
Tape & Reel
BZX84BxxxLT3G 10,000 /
Tape & Reel
SOT23
(PbFree)
SOT23
(PbFree)
SOT23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING DIAGRAM
1
xxx M G
G
xxx = Device Code
M = Date Code*
G= PbFree Package
*Date Code orientation may vary depending
upon manufacturing location.
(Note: Microdot may be in either location)
SZBZX84BxxxLT1G SOT23
(PbFree)
3,000 /
Tape & Reel
SZBZXCxxxLT3G 10,000 /
Tape & Reel
SOT23
(PbFree)
SZBZX84xxxLT1G SOT23
(PbFree)
3,000 /
Tape & Reel
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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2
MAXIMUM RATINGS
Rating Symbol Max Unit
Total Power Dissipation on FR5 Board,
(Note 1) @ TA = 25C
Derated above 25C
Thermal Resistance, JunctiontoAmbient
PD
RqJA
225
1.8
556
mW
mW/C
C/W
Total Power Dissipation on Alumina
Substrate, (Note 2) @ TA = 25C
Derated above 25C
Thermal Resistance, JunctiontoAmbient
PD
RqJA
300
2.4
417
mW
mW/C
C/W
Junction and Storage Temperature Range TJ, Tstg 65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C
unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
QVZMaximum Temperature Coefficient of VZ
CMax. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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3
ELECTRICAL CHARACTERISTICS BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device*
Device
Marking
VZ1 (Volts)
@I
ZT1 =5mA
(Note 3) ZZT1
(W)
@ IZT1 =
5 mA
VZ2 (V)
@I
ZT2 =1mA
(Note 3) ZZT2
(W)
@ IZT2 =
1 mA
VZ3 (V)
@I
ZT3 =20mA
(Note 3) ZZT3
(W)
@ IZT3 =
20 mA
Max Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT1 = 5 mA
C (pF)
@ VR = 0
f = 1 MHz
Min Nom Max Min Max Min Max
VR
Volts
IR
mA@Min Max
BZX84C2V4LT1G Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 3.5 0 450
BZX84C2V7LT1G Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 3.5 0 450
BZX84C3V0LT1G Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 3.5 0 450
BZX84C3V3LT1G Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 3.5 0 450
BZX84C3V6LT1G Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 3.5 0 450
BZX84C3V9LT1G Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 3.5 2.5 450
BZX84C4V3LT1G W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 3.5 0 450
BZX84C4V7LT1/T3G Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 3.5 0.2 260
BZX84C5V1LT1/T3G Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 2.7 1.2 225
BZX84C5V6LT1/T3G Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 2.0 2.5 200
BZX84C6V2LT1/T3G Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185
BZX84C6V8LT1/T3G Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155
BZX84C7V5LT1G Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140
BZX84C8V2LT1G Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135
BZX84C9V1LT1/T3G Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130
BZX84C10LT1G Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130
BZX84C11LT1G Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130
BZX84C12LT1G Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130
BZX84C13LT1G Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120
BZX84C15LT1/T3G Y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110
BZX84C16LT1G Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105
BZX84C18LT1/T3G Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100
BZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85
BZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85
BZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80
Device*
Device
Marking
VZ1 Below
@I
ZT1 =2mA ZZT1
Below
@ IZT1 =
2 mA
VZ2 Below
@I
ZT2 = 0.1 m-
AZZT2
Below
@ IZT4 =
0.5 mA
VZ3 Below
@I
ZT3 =10mA ZZT3
Below
@ IZT3 =
10 mA
Max Reverse
Leakage
Current
qVZ
(mV/k) Below
@ IZT1 = 2 mA
C (pF)
@ VR = 0
f = 1 MHz
Min Nom Max Min Max Min Max
VR
(V)
IR
mA@Min Max
BZX84C27LT1G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70
BZX84C30LT1G Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70
BZX84C33LT1/T3G Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70
BZX84C36LT1G Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70
BZX84C39LT1G Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45
BZX84C43LT1G Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40
BZX84C47LT1G Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40
BZX84C51LT1G Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40
BZX84C56LT1G Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40
BZX84C62LT1G Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35
BZX84C68LT1G Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35
BZX84C75LT1G Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C.
*Include SZ-prefix devices where applicable.
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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4
ELECTRICAL CHARACTERISTICS BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device*
Device
Marking
VZ (Volts) @ IZT = 5 mA
(Note 4)
ZZT (W) @
IZT = 5 mA
(Note 4)
Max Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT = 5 mA C (pF)
@ VR =0,
f = 1 MHz
IR
@
VR
Min Nom Max Max mAVolts Min Max
BZX84B4V7LT1G T10 4.61 4.7 4.79 80 3 2 3.5 0.2 260
BZX84B5V1LT1G T11 5.00 5.1 5.20 60 2 2 2.7 1.2 225
BZX84B5V6LT1G T12 5.49 5.6 5.71 40 1 2 2 2.5 200
BZX84B6V2LT1G T13 6.08 6.2 6.32 10 3 4 0.4 3.7 185
BZX84B6V8LT1G T14 6.66 6.8 6.94 15 2 4 1.2 4.5 155
BZX84B7V5LT1G T15 7.35 7.5 7.65 15 1 5 2.5 5.3 140
BZX84B8V2LT1G T16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135
BZX84B9V1LT1G T17 8.92 9.1 9.28 15 0.5 6 3.8 7 130
BZX84B12LT1G T18 11.8 12 12.2 25 0.1 8 6 10 130
BZX84B15LT1G T22 14.7 15 15.3 30 0.05 10.5 9.2 13 110
BZX84B16LT1G T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105
BZX84B18LT1G T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100
BZX84B22LT1G T24 21.6 22 22.4 55 0.05 15.4 16.4 20 85
BZX84B24LT1G T25 23.5 24 24.5 70 0.05 16.8 18.4 22 80
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C.
*Include SZ-prefix devices where applicable.
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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5
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)
VZ, NOMINAL ZENER VOLTAGE (V)
-3
-2
-1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range 55C to +150C)
TYPICAL TC VALUES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range 55C to +150C)
VZ @ IZT
100
VZ, NOMINAL ZENER VOLTAGE
Figure 3. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )
1000
100
10
1
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
150C75C 25C 0C
TYPICAL TC VALUES
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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6
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
TA = 25C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110 30 50 70 90
TA = 25C
IR, LEAKAGE CURRENT ( A)
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150C
+25C
-55C
IZ, ZENER CURRENT (mA)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
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7
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81358171050
BZX84C2V4LT1/D
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