Numerical Index 2N3262-2N3371 =| > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS i= = = = = || REPLACE- | PAGE Po 7B] Ty | Vee | Vee |= tre @ Ic Voeisan @ le 2) _ le We 2 /5| ment | numper | USE 3 2 al |B} 23 =\o @ 25C | BS] C | Wwolts) | (volts) |S | (min) (max) 5} (volts) = 3 s\s 2N3262 S| N HSS | 8.75W| C | 200 100 80] 0 40 O.5A 0.6 1L.0A 150M | T 2N3263 S|] N PMS 75W | Cc | 200 150 90,0 20 55 15A 1.0 20A 20M | T 2N3264 S|N PMS 75w | c | 200 120 60] 0 20 80 5A 1.6 20A 20M |T 2N3265 S|N PMS 125W]} Cc | 200 150 90) 0 20 55 15A 1.0 20A 20M | T 2N3266 S| N PMS 125W |] C | 200 120 60/0 20 80 15A 1.6 20A 20M | T 2N3267 Gy] P RFA 75M | A | 100 15 8.0] 0 10} 500 3.0M IS |E 900M | T 2N3268 S| N AFA | 0.15W | A | 200 45 4510 12 80 LOM 1.0 5.0M 40 }E 2.5M]B 2N3269 thru Thyristors, see Table on Page 1-154 2N3276 pneree Field Effect Transistors, see Table on Page 1-166 2N3279 G| P 9-49 RFA O.1W} A] 100 30 20]0 10 70 3,0M 0.3 5.0M LO|E 400M | T 2N3280 G| P 9-49 RFA 0.1W{ A} 100 30 20] 0 10 70 3.0M 0.3 5.0M lO) E 400M | T 2N3281 Gy] P 9-49 RFA O.1W] A] LOO 30 15] 0 10 | 100 3.0M 0.5 5.0M lO] E 300M | T 2N3282 G| P 9-49 RFA O.1W] A} LOO 30 15] 0 10 | 100 3.0M 0.5 5.0M LO] E 300M | T 2N3283 G| P 9-51 RFC O.1W yA } 100 25 25)]8 10 3.0M 10 | E 250M | T 2N3284 G|P 9-51 RFC O.1W | A f 100 25 25]S8 10 3.0M 1O|E 250M | T 2N3285 Gy] P 9-51 RFC O.1W {A } 100 20 20}S5]5.0 3.0M 5.0]/E 250M | T 2N3286 G| P 9-51 RFC O,1lw] A} 100 20 20}S ]5.0 3.0M 5.0]E 250M | T 2N3287 SIN 9-54 REA 0.2W | At 200 40 2010 15] 100 2.0M 0,3 5.0M I5|/E 350M | T 2N3288 S| N 9454 RFA 0.2W] A] 200 40 20]0 15 | 100 2,0M} 0.3 5.0M I5|E 350M | T 2N3289 S| N 9-54 REA 0.2W | A |} 200 30 15) 0 10 | 150 2.0M 0.4 5,0M LO] E 300M | T 2N3290 Sj WN 9-54 RFA Q.2W | A | 200 30 15 |0 10 {150 2.0M] 0.4 50M 10/E 300M | T 2N3291 S|N 9-56 RFC 0.2W | A | 200 25 25 |S 10 2.0M 10 | E 250M | T 2N3292 S]N 9-56 RFC 0.2W | A | 200 25 2518 10 2.0M 10 | E 250M | T 2N3293 S|] N 9-56 RFC 0.2W | A | 200 20 20]S 10 2,0M 10/E 250M | T 2N3294 S|N 9-56 RFC 0.2W | A | 200 20 20/8 10 2,.0M 1lO/E 250M | T 2N3295 S|N 9-58 MPA 800M | A | 175 60 60] 5S 20 60 10M 0.5 0.154 200M | T 2N3296 SEN 9-61 MPA 700M | A} 175 60 60}S]5.0 50 40M 0.5 0.44 LOOM | T 2N3297 S| N 9-64 MPA 25W | Cc] 175 60 60 |S 42.5 35 0.44 0.5 1.0A LOOM | T 2N3298 S|N 9-67 HPA L.0W | C] 175 25 15 | 0 80 | 240 10M 200M | T 2N3299 S| N 8-219] HSS 0.8W | A | 200 60 30] 0 40 | 120] 0.154 | 0.22 0.15A 250M | T 2N3300 S|N 8-219} HSS 0.8W] A | 200 60 30 | O | 100 } 300 | 0.15A | 0.22 0.154 250M | T 2N3301L S| N 8-219] HSS | 0.36W | A | 200 60 30] 0 40 | 120 | 0.15A | 0.22 O.15A 250M | T 2N3302 S|[N 8-219} HSS | 0.36W | A | 200 60 30 | O | 100 | 300 |] 0.154 | 0.22 0,158 250M | T 2N3303 S| N 8-221] HSS 0.6W]} A | 200 25 12 | 0 30 | 120 0.34 10.33 O.3A 450M | T 2N3304 S| P 8-223} MSS 0.3W | A | 200 6.0 6.0]0 30] 120 LOM | 0.16 LOM 500M | T 2N3305 S| P AFA 0.6W | A | 200 50 40] 0 40 | 120 0,1M 0.2 10M 40/E 20M | T 2N3306 S| P AFA 0.6W | A | 200 50 40 | 0 | 100 | 300 0.1M 0.2 10M 70] E 20M | T 2N3307 S| P 9-69 RFA 0.2W | A | 200 40 35] 0 40 | 250 2.0M 0.4 3.0M 40/E 300M | T 2N3308 S| P 9-69 RFA 0.2W | A | 200 30 25] 0 25 | 250 2.0M 0.4 3.0M 25 ]/E 300M | T 2N3309 S|} N | 2N3553 9-74 MPA 3.5W] C4175 50 50] S |5.0} 100 30M 0.5 0.25A 300M | T 2N3309A4 | S| N | 2N3553 9-74 HPA 5.OW | c } 200 60 60/S ]8.0 80 50M] 0.5 0.254 300M | T 2N3310 S| N HPA 0.3W | A | 200 35 15] 0 10 20M 0.5 20M 300M | T 2N3311 G| P 7-108] LPA 170W | C |; 110 30 30/58 60 | 120 3.0A o.1 3.0A 30 )E L.OK]E 2N3312 G| P 7-108] LPA 170w | | 110 45 45 | Ss 60 | 120 3.0A O.L 3.0A 30]E 1.0K/E 2N3313 G| P 7-108] LPA 170W | Cc } 110 60 60 |S 60 | 120 3.0A O.1 3.0A 30/E L.OK | E 2N3314 Gj P 7~108| LPA 170W | c | 110 30 30] S | 100 | 200 3.0A a.1 3.0A 40/E 1.0K] E 2N3315 Gi] P 7-108) LPA 170W | c | 110 45 45 |S 1100] 200 3.0A O.1 3.0A 40 |E 1.0K] E 2N3316 Gi P 7-108; LPA L70W | C; 110 60 60; 5 ; LOQ; 200 3.0A Q.t 3.0A 40,5 LOK] E 2N3317 Ss] P CHP | 0.15W | A | 140 30 30] 0 6.4M | T 2N3318 s| P CHP | 0.15W | A | 140 15 15] 0 7,.6M/T 2N3319 Ss] P CHP | 0.15W] A | 140 10 6.0] 0 12M | T 2N3320 G| P HSS 60M | A | 100 15 10 | 0 50 20M | 0.19 40M 600M | T 2N3321 Gy] P HSS 60M | A | 100 12 7.0] 0 | 100 1oM | 0.12 10M 600M | T 2N3322 G| P HSs 60M | A} 100 12 7.0] 0 30 40M | 0.25 20M 600M | T 2N3323 G| P 9n71 RFC | 0.15W | A | 100 35 35 |S 30 | 200 3,0M 30]/E 200M | T 2N3324 G| P G71 RFC | 0.15W | A | 100 35 35/8 30 | 200 3.0M 30] E 200M | T 2N3325, G|P 9-71 | RFC] 0.15W| A | 100 35 35 |S 30 | 200 3.0M 30, E 200M | T 2N3326 S] Nj 2N2218A 8-114] HSA 0.8W] A] 175 60 4510 40] 120] 0.15A 0.4 0.154 250M | T 2N3327 S| N HPA 20W | C | 200 65 6510 10 O.5A 100M | T 2N3328 oNaa x6 Field Effect Transistors, see Table on Page 1-166 N333 2N3337 SS} N | 2N3287 9-54 RFA 0.3W |] A | 200 40 40] 0 30 | 300 4.0M 30/E 400M { T 2N3338 S| N | 2N3289 9-54 RFA 0.3W] A | 200 40 40] 0 30 | 300 4,0M 30] E 400M | T 2N3339 S| Nj 2N3288 9-54 RFA 0.3W} A | 200 40 40] 0 30 | 300 4.0M 30/ E 400M | T 2N3340 Ss; N MSS 0.4W 7] A | 175 30 20} 0 40 1o* 0.2 10* 70M | T 2N3341 S| P MSS 0.4W 7) A | 175 30 2010 40 Lo* | 0.25 10* 50M | T 2N3342 Ss} P MSS | 0,25W] A} 175 20 8.0} 0 30 5,0M 0.1 5.0M 2N3343 Ss}; P CHP | 0.25W] A | 175 25 8.0] 0 20 0.25M 2.0M| T 2N3344 S| P CHP | 0.25W] A | 175 30 30] 0 25 1.0M 2.0M| T 2N3345 S| P CHP | 0.25W] A} 175 50 50] 0 15 1.0M 2.0M| T 2N3346 S| P CHP | 0.25W] A] 175 50 50] 0 25 1.0M 2.0M/ T 2N3347 S| P DFA 300M | A | 175 60 45] 0 40 | 300 10* 0.5 10M 60] E 60M | T 2N3348 S| P DFA 300M | A | 175 60 4510 40 | 300 10* 0.5 10M 60} E 60M | T 2N3349 S| P DFA 300M | A | 175 60 45/0 40 | 300 10* 0.5 10M 60} E 60M| T 2N3350 S| P DFA 300M] A | 175 60 45 | 0] 100] 300 10* 0.5 10M 150] E 60M | T 2N33521 Ss] P DFA 300M | A | 175 60 45 | 0] 100] 300 10* 0.5 10M 150] E 60M | T 2N3352 si P DFA 300M] A | 175 60 45 | 0 | 100] 300 10* 0.5 10M 150] E 60M | T 2N3353 thru Thyristors, see Table on Page 1-154 2N3364 2N3365 thru Field Effect Transistors, see Table on Page 1-166 2N3370 2n3371 | G| P| | [eral isom]a|ioo{| 25| 10}/o| 20| 300] 12m 25{ | 320M 1-138 RF Transistors RF TRANSISTOR SELECTOR GUIDES SMALL-SIGNAL TRANSISTORS (Listed in order of operating test frequency and power gain) Min Gpe (dB) f Min Pout (mW)* Type Material Polarity MHz Typ Conversion Gain (dB)f 2N3324 Ge P 10 24 2N2273 Ge P 30 10 2N741, A Ge P 30 16 2N2929 Ge P 60 26 2N700 Ge P 70 20 2N700A Ge P 70 22 2N3323 Ge P 100 11 2N707, A Si N 100 200* 2N1562 Ge P 160 5,0 2N1693 Ge P 160 5.0 2N1561 Ge P 160 6.0 2N1692 Ge P 160 6.0 MM1941 si N 175 7.0 2N4072, 3 Si N 175 10 2N3286 Ge P 200 14 2N3294 Si N 200 14 2N918 Si N 200 15 2N2708 Si N 200 15 2N3281 Ge P 200 16 2N3282 Ge P 200 16 2N3283 Ge P 200 16 2N3284 Ge P 200 16 2N3291, 2 Si N 200 16 2N3127 Ge P 200 17 2N3279, 80 Ge P 200 17 2N3287 thru 90 Si N 200 17 2N3307, 8 Si P 200 17 2N3785 Ge Pp 200 18 2N3783, 4 Ge P 200 20 MM5002 Ge P 200 20 MM5001 Ge P 200 22 MM5000 Ge P 200 24 2N3137 Si N 250 6.0 MM1803 Si N 250 7.5 2N2857 Si N 450 12.5 2N3839 Si N 450 12.5 2N4959 Si P 450 15 2N4958 Si P 450 16 2N4957 Si P 450 17 2N1141, 2, 3 Ge P 500 10 typ 2N1195 Ge P 500 10 typ AF239 Ge P 800 11.2G 2N3544 Si N 1000 10* MM1501 Si N 1500 150* MM1500 Si N 1500 250* MM380 Ge P 1500 fax MM1139 Ge P 108 to 10.7 227 9-6 RF Transistors SILICON Vp = 20-25 V 2N3291 thru 2NG29A4 ( ) Men 2025 att NF = 7dB @ 200 MHz NPN silicon annular transistor for TV and FM mixer, RF and IF amplifier and general-purpose, low-noise, i high-gain amplifier applications. CASE 20 (10-72) MAXIMUM RATINGS . 2N3291 2N3293 * Rating Symbol 9N3292 9N3294 Unit Collector ~ Base Voltage Vos 25 20 Volts Collector - Emitter Voltage Vors 25 20 Volts Emitter - Base Voltage Ves 3.0 3.0 Volts Collector Current Ic 50 50 mA Power Dissipation at 25C Case Po 300 300 mW Above 25C derate 1.71 mW/C Power Dissipation at 25C Amb.| Pp 200 200 mW Above 25C derate 1.14 mwW/C Junction Temperature Ty +200 +200 9% Storage Temperature Tstg |~ -85 to +200 e % NEUTRALIZED POWER GAIN POWER GAIN AND NOISE FIGURE versus COLLECTOR CURRENT AND NOISE FIGURE versus FREQUENCY = = 24 Common emitter: f = 206 mc Vor = 1 {neutralization and tuning set 20 at Veg = 10V, Ip = 2 mA) 12 4 10V G,, POWER GAIN (aB) NF, NOISE FIGURE (dB) G,, POWER GAIN (dB) NF, NOISE FIGURE kis) o 0 10 20 40 60 100 200 400 600 1000 2000 4000 2 4 6 8 1012 144 (1648 20 EREQUENCY ( MHz) Ic, COLLECTOR CURRENT (mA) 9-56 RF Transistors 2N3291 thru 2N3294 (Continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol Test Conditions Min | Typ | Max | Unit Collector-Emitter BV Ig = 25 wAde, V = 0 Vde Breakdown Voltage CES 2N3291, 2N3292 BE 25 35 _ 2N3293, 2N3294 20 30 | Collector Cutoff Current logo Vop = 10 Vde, Ip = 0 _ 01 7 0.1 | uAdc Emitter Cutoff Current Ippo Veep = 0.5 Vde, I = 0 _ _ 100 u Adc DC Forward Current hep Vor = 10 Vde, Ig = 2 mAde 10 _ _ ~ Transfer Ratio AC Current Gain hte Vop = 10 Vde,Io= 2mAde, { 10 | 20 | f = 1 kHz Output Capacitance Cop Vop = 10 Vdc, Ip = 0, _ 1.0 2.0 pF f = 100 kHz, Note 1 AC Current Gain heel Voge = 10 Vde, I = 2 mAde 2.5 6.0 12 _ f = 100 MHz Collector-Base r/c Vv = 10 Vdc, In = 2 mAde _ 15 30 is Time Constant bee f cB 8 MHz P Maximum Frequency f v = 10 Vdc, I, = 2mA _ 2000 _ MHz of Oscillation max CE Cc 2N3291 Power Gain Ge 16 20 24 dB Vor = 10 Vdc, Ic = 2 mAdc, Noise Figure NF f = 200 MHz _ 6 8 dB Power Gain (AGC) G. Note 2 _ - Qo |B VcE = 5 Vdc, Ic = 20 mAdc f = 200 MHz 2N3292 Power Gain Ge 16 20 24 dB Vcr = 10 Vde, Ic = 2 mAdc Noise Figure NF f = 200 MHz _ q 9 dB Power Gain (AGC) G, Note 2 _ 0 dB Veg = 5 Vde, Io = 20 mAdc f = 200 MHz 2N3293 Power Output Pout 2 _ mW VEE =-11 Vde,f= 257 MHz 2N3294 Power Gain G, 14 _ { B - VCE = 10 Vdc, Ic = 2 mAdc Noise Figure NF f = 200 MHz *c 7 aB Note 1. Cop is measured in guarded circuit such that the can capacitance is not included. Note 2. AGC is obtained by increasing Ic, The circuit remains adjusted for Vag = 10 Vdc, Ig = 2 mAdc operation. 9-57