2SK2938(L),2SK2938(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-561B (Z)
3rd. Edition
Jul. 1998
Features
• Low on-resistance
RDS =0.026 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
123
4
123
4
LDPAK
G
D
S
2SK2938(L),2SK2938(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID25 A
Drain peak current ID(pulse)Note1 100 A
Body-drain diode reverse drain current IDR 25 A
Avalanche current IAP Note3 20 A
Avalanche energy EAR Note3 34 mJ
Channel dissipation Pch Note2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
2SK2938(L),2SK2938(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60——V I
D
= 10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20——V I
G
= ±100µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16V, VDS = 0
Zero gate voltege drain current IDSS ——10µAV
DS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1mA, VDS = 10V
Static drain to source on state RDS(on) — 0.026 0.034 ΩID = 15A, VGS = 10VNote4
resistance RDS(on) — 0.045 0.07 ΩID = 15A, VGS = 4V Note4
Forward transfer admittance |yfs|1117—S I
D
= 15A, VDS = 10V Note4
Input capacitance Ciss — 740 — pF VDS = 10V
Output capacitance Coss — 380 — pF VGS = 0
Reverse transfer capacitance Crss — 140 — pF f = 1MHz
Turn-on delay time td(on) — 10 — ns ID = 15A, VGS = 10V
Rise time tr— 160 — ns RL = 2Ω
Turn-off delay time td(off) — 100 — ns
Fall time tf— 150 — ns
Body–drain diode forward voltage VDF — 0.95 — V IF = 25A, VGS = 0
Body–drain diode reverse
recovery time trr — 40 — ns IF = 25A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
2SK2938(L),2SK2938(S)
4
Main Characteristics
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
80
60
40
20
050 100 150 200
50
40
30
20
10
0246810
3.5 V
4 V
5 V
V = 3 V
GS
6 V
4.5 V
10 V 20
16
12
8
4
012345
Tc = 75°C
25°C
–25°C
V = 10 V
Pulse Test
DS
Maximum Safe Operation Area
200
100
50
10
20
5
1
2
0.5
0.20.1 0.3 1 3 10 30 100
Ta = 25 °C
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
100 µs
Operation in
this area is
limited by R
DS(on)
Pulse Test
2SK2938(L),2SK2938(S)
5
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Drain to Source On State Resistance
R ( )
W
DS(on)
Static Drain to Source on State Resistance
R ( )
W
DS(on)
1.0
0.8
0.6
0.4
0.2
048
12 16 20
I = 15 A
D
5 A
10 A
0.1 1 100.2 5
0.5
0.02
0.05
0.01
20.5 5020
0.2
0.1
V = 4 V
GS
10 V
Pulse Test
0.10
0.08
0.06
0.04
0.02
–40 0 40 80 120 160
0
V = 4 V
GS
10 V
2, 5 A
10 A
2, 5, 10 A
Pulse Test
0.1 0.3 1 3 10 30 100
50
20
5
10
1
2
0.5
25 °C
Tc = –25 °C
75 °C
V = 10 V
Pulse Test
DS
Pulse Test
2SK2938(L),2SK2938(S)
6
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
0.1 0.3 1 3 10 30 100
1000
500
50
100
20
10
200
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
01020304050
2000
5000
1000
100
200
500
10
20
50
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
100
80
60
40
20
0
20
16
12
8
4
8 16243240
0
I = 25 A
D
V
GS
V
DS
V = 50 V
25 V
10 V
DD
V = 50 V
25 V
10 V
DD
1000
300
30
100
3
10
1
0.1 0.3 1 3 10 30 100
V = 10 V, V = 3 0 V
PW = 5 µs, duty < 1 %
GS DD
tf
r
td(on)
t
d(off)
t
2SK2938(L),2SK2938(S)
7
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E (mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50W
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Avalanche Test Circuit Avalanche Waveform
20
16
12
8
4
00.4 0.8 1.2 1.6 2.0
V = 0, –5 V
GS
10 V 5 V
Pulse Test
40
32
24
16
8
25 50 75 100 125 150
0
I = 20 A
V = 25 V
duty < 0.1 %
Rg > 50
AP
DD
W
2SK2938(L),2SK2938(S)
8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50W
90%
10%
t
f
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C
q g q
q
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Switching Time Test Circuit Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermao Impedance s (t)
g
2SK2938(L),2SK2938(S)
9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (L)
—
—
1.4 g
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.27 ± 0.2
As of January, 2001
Unit: mm
2SK2938(L),2SK2938(S)
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(1)
—
—
1.3 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.15
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK2938(L),2SK2938(S)
11
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(2)
—
—
1.35 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.2
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
5.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK2938(L),2SK2938(S)
12
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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