SHINDENGEN Schottky Rectifiers (SBD) Single OUTLINE DIMENSIONS M1FP3 Case:M1F Unit:mm 30V 1.29A FEATURES Small SMT Super low VF=0.4V APPLICATION Reversed Battery Connection Protection DC OR output DC/DC converter Mobile telephone, personal computer RATINGS AbsoluteMaximumRatings(IfnotspecifiedTl=25) Item Symbol Conditions StorageTemperature Tstg OperatingJunctionTemperature Tj MaximumReverseVoltage VRM AverageRectifiedForwardCurrent IO 50Hzsinewave,R-loadTa=25Onaluminasubstrate PeakSurgeForwardCurrent I FSM Ratings -55125 125 30 1.29 50Hzsinewave,R-loadTl=109Onglass-epoxysubstrate 1.1 50Hzsinewave,Non-repetitive1cyclepeakvalue,Tj=25 30 ElectricalCharacteristics(IfnotspecifiedTl=25) Item Symbol Conditions ForwardVoltage VF IF=0.4A,Pulsemeasurement ReverseCurrent JunctionCapacitance ThermalResistance IR Cj jl ja IF=1.1A,Pulsemeasurement VR =30V,Pulsemeasurement f=1MHz,VR=10V junctiontolead junctiontoambientOnaluminasubstrate junctiontoambientOnglass-epoxysubstrate Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings Max.0.35 Max.0.40 Max.2.5 Typ.90 Max.20 Max.108 Max.186 Unit V A A Unit V mA pF /W M1FP3 Forward Voltage Forward Current IF [A] 10 Tl=125C [MAX] Tl=125C [TYP] Tl=25C [MAX] Tl=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 Forward Voltage VF [V] 1 1.2 Junction Capacitance Cj [pF] 10 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 M1FP3 f=1MHz Tl=25C TYP M1FP3 Reverse Current 1000 Tl=125C [MAX] 100 Reverse Current IR [mA] Tl=125C [TYP] Tl=100C [TYP] 10 Tl=75C [TYP] Tl=50C [TYP] 1 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 Reverse Voltage VR [V] 25 30 M1FP3 Reverse Power Dissipation Reverse Power Dissipation PR [W] 7 6 DC D=0.05 0.1 5 0.2 0.3 4 0.5 3 2 SIN 1 0 0.8 0 5 10 15 20 25 30 35 Reverse Voltage VR [V] Tj = 125C 0 VR tp D=tp /T T M1FP3 Forward Power Dissipation Forward Power Dissipation PF [W] 1 0.8 D=0.8 0.6 0.05 0.1 0.3 0.2 DC SIN 0.5 0.4 0.2 0 0 0.5 1 1.5 2 2.5 Average Rectified Forward Current IO [A] Tj = 125C IO 0 tp D=tp /T T M1FP3 Derating Curve Average Rectified Forward Current IO [A] 2.4 2 DC Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm D=0.8 1.6 0.5 SIN 1.2 0.8 0.3 0.4 0.2 0.1 0 0.05 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 15V IO 0 0 VR tp D=tp /T T Average Rectified Forward Current IO [A] M1FP3 Derating Curve 2 DC D=0.8 1.5 0.5 SIN 0.3 1 0.2 0.1 0.5 0 0.05 0 20 40 60 80 100 120 140 160 Lead Temperature Tl [C] VR = 15V IO 0 0 VR tp D=tp /T T M1FP3 Peak Surge Forward Capability IFSM 50 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=25C before surge current is applied Peak Surge Forward Current IFSM [A] 40 30 20 10 0 1 2 5 10 20 Number of Cycles [cycles] 50 100