MUR820, RURP820 Data Sheet January 2000 File Number 1355.5 8A, 200V Ultrafast Diodes Features MUR820 and RURP820 are ultrafast diodes with soft recovery characteristics (trr < 25ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. * Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <25ns These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. * Avalanche Energy Rated * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits Formerly developmental type TA09223. * General Purpose Ordering Information PART NUMBER * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC PACKAGE BRAND MUR820 TO-220AC MUR820 RURP820 TO-220AC RURP820 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified MUR820 RURP820 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 200 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 200 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 157oC) 200 V 8 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) 16 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) 100 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 50 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL 20 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 oC (c)2001 Fairchild Semiconductor Corporation MUR820, RURP820 Rev. A MUR820, RURP820 Electrical Specifications TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 8A - - 0.975 V IF = 8A, TC = 150oC - - 0.895 V VR = 200V - - 100 A VR = 200V, TC = 150oC - - 500 A IF = 1A, dIF/dt = 200A/s - - 25 ns IF = 8A, dIF/dt = 200A/s - - 30 ns ta IF = 8A, dIF/dt = 200A/s - 13 - ns tb IF = 8A, dIF/dt = 200A/s - 5 - ns QRR IF = 8A, dIF/dt = 200A/s - 25 - nC VR = 10V, IF = 0A - 60 - pF 3 oC/W VF IR trr CJ - RJC - DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 100 10 IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 40 100oC 25oC 175oC 1 175oC 10 100oC 0.1 0.01 25oC 0.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE (c)2001 Fairchild Semiconductor Corporation 0.001 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE MUR820, RURP820 Rev. A MUR820, RURP820 Typical Performance Curves (Continued) 35 20 TC = 100oC, dIF /dt = 200A/s 30 trr 16 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) TC = 25oC, dIF /dt = 200A/s ta 12 8 tb 4 25 trr 20 ta 15 10 tb 5 0 0.5 0 0.5 8 4 1 t, RECOVERY TIMES (ns) TC = 175oC, dIF /dt = 200A/s 40 trr ta 20 0 0.5 tb 1 4 FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) 50 10 8 IF , FORWARD CURRENT (A) FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT 30 4 1 IF , FORWARD CURRENT (A) 8 8 DC 6 SQ. WAVE 4 2 0 140 145 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE CJ , JUNCTION CAPACITANCE (pF) 150 125 100 75 50 25 0 0 50 100 150 VR , REVERSE VOLTAGE (V) 200 FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE (c)2001 Fairchild Semiconductor Corporation MUR820, RURP820 Rev. A MUR820, RURP820 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS I = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS MUR820, RURP820 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H