MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA PC Collector Power Dissipation 350 mW TJ, TSTG Operating Junction and Storage Temperature Range -55 ~ 150 C Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -10A, IE = 0 -40 V BVCEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -40 V BVEBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 -5 ICEX Collector Cut-off Current VCE = -30V, VEB = -3V hFE DC Current Gain * VCE = -1V, IC = -0.1mA VCE = -1V, IC = -1mA VCE = -1V, IC = -10mA VCE = -1V, IC = -50mA VCE = -1V, IC = -100mA V -50 60 80 100 60 30 VCE (sat) Collector-Emitter Saturation Voltage * IC = -10mA, IB = -1mA IC = -50mA, IB = -5.0mA VBE (sat) Base-Emitter Saturation Voltage * IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA -0.65 fT Current Gain Bandwidth Product IC = -10mA, VCE = -20V, f = 100MHz 250 Cob Output Capacitance VCB= -5V, IE=0, f=1.0MHz NF Noise Figure tON tOFF nA 300 -0.25 -0.4 V V -0.85 -0.95 V V MHz 4.5 pF IC = -100A, VCE = -5V, RS = 1K f = 10Hz to 15.7KHz 4 dB Turn On Time VCC = -3V, VBE = -0.5V IC = -10mA, IB1 = -1mA 70 ns Turn Off Time VCC = -3V, IC = -10mA, IB1 = IB2 = -1mA 300 ns * Pulse Test: Pulse Width300s, Duty Cycle2% (c)2006 Fairchild Semiconductor Corporation MMBT3906K Rev. B 1 www.fairchildsemi.com Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 350 1.4 Vce=1V B=10 1.2 Vce(sat), Saturation Current,[V] hfe, Current Gain 300 125C 250 75C 200 25C 150 100 50 1.0 0.8 0.6 125C 0.4 75C 0.2 25C 0.1 1 10 1 100 10 100 Collector Current, [mA] Collector Current, [mA] Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current 1.0 Leakage current of Collector - Base(nA) B=10 Vbe(sat), Saturation Current,[V] 0.9 0.8 0.7 25C 0.6 75C 0.5 125C 0.4 V CB = 25V 10 1 0.1 0.3 1 10 25 100 50 75 100 125 150 Temperature, ['C] Collector Current, [mA] Figure 5. Output Capacitance Figure 6. Power Dissipation vs Ambient Temperature 0.4 100 PD - Power Dissipation (W) Cob [pF], Capacitance IE = 0 f = 1M H z 10 1 0.1 -1 -10 0.2 0.1 0.0 -100 0 25 50 75 100 125 150 O V C B [V ], C olle ctor-B ase V oltage Temperature, [ C] 2 MMBT3906K Rev. B 0.3 www.fairchildsemi.com MMBT3906K PNP Epitaxial Silicon Transistor Typical Performance Characteristics MMBT3906K PNP Epitaxial Silicon Transistor Mechanical Dimensions 0.10 0.10 2.40 0.40 0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 0.03 +0.05 0.12 -0.023 0.96~1.14 0.97REF 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters 3 MMBT3906K Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 4 MMBT3906K Rev. B www.fairchildsemi.com MMBT3906K PNP Epitaxial Silicon Transistor TRADEMARKS