LTTEELTAELESEMLH 63 TO INVERTER SCR's 108 270 AMPERES GE TYPE c48/C148 c49/C149 C154, 156 C155, 157 C158, 159 C164, 165 C354, 355 C358 CONSTRUCTION ALL ALL DIFFUSED DIFFUSED AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING GATE GATE GATE GATE GATE GATE ELECTRICAL SPECIFICATIONS { VOLTAGE RANGE FORWARD CONDUCTION IT (RMS) ox: forward conduction sinusoidal @ 60Hz @ 600 Hz @ 1200 Hz @ 2500 Hz @ 5000 Hz one current Max. 12t (A2 sec) Max. thermal Impedance (C) for to Typical turn-on time ({isec) Turn-off time @ rated voltage and Ty Vr = 50V min. (Lsec) @ 20V/ sec reapplied @ 100V/ sec reapplied 200V/ Lisec reapplied . -rise of on-state difat current (A/ Ty Junction operating temperature range (C) BLOCKING Critical rate-of-rise off-state dv/dt voltage exponential to rated VD RM @ Max. T (V/ sec) FIRING Max. required gate current to trigger lor @ 40C @ 125C required voltage to trigger Vet 9 40 " @125C _(Min.) VOLTAGE TYPES Repetitive Peak Forward and Reverse Voltages 100 150 200 PACKAGE TYPE PACKAGE OUTLINE NO. 110/63 110/63 110/63 110/63 110/63 1000 4150 35 2 wl" STUD 109/108.1 110 110 110 110 110 1800 13,200 3 2 20 25 C358E C358M C3588 C358N C358T C358P C358PA C358PB %" STUD %' STUD ie 109, 108 109 280 146HIGH SPEED Silicon Controlled Rectifier C398 225A RMS AMPLIFYING ome The General Electric C358 Silicon Controlled Rectifier is designed for power switching at high frequencies. This is an all-diffused Press-Pak device em- ploying the field-proven amplifying gate. 1200 Volts FEATURES: Fully characterized for operation in inverted and chopper applications. High di/dt ratings. High dv/dt capability with selections available. Rugged hermetic glazed ceramic package. 500 400 400 \ 300 i DN \ a. 200 100 ALLOWABLE PEAK ON-STATE CURRENT- AMPERES SINUSOIDAL WAVEFORM 50% DUTY CYCLE . a Soe RECTANGULAR WAVEFORM 180 CONDUCTION 65 CASE TEMPERATURE 800 VOLT BLOCKING SO% DUTY CYCLE di/at - 25 AMPS /y SEC loo 65C CASE TEMPER 800 VOLT BLOCKING ALLOWABLE PEAK ON-STATE CURRENT (AMPERES) | ATURE \ 100 {000 100 200 400 600 1000 2000 5000. 10,000 FREQUENCY IN Hz FREQUENCY IN Hz MAXIMUM ALLOWABLE RATINGS REPETITIVE PEAK OFF-STATE | REPETITIVE PEAK REVERSE NON-REPETITIVE PEAK TYPES VOLTAGE, Vprm! VOLTAGE, Varm! REVERSE VOLTAGE, Vasm! Ty = -40C to +125C Ty = -40C to +125C Tj = +125C C358E 500 Volts 500 Volts 600 Volts C358M 600 600 720 C3588 700 700 840 C358N 800 800 960 C358T 900 900 1080 C358P 1000 1000 1200 C358PA 1100 1100 1300 C358PB 1200 1200 1400 1 Half sinewave waveform 10 ms max. pulse width. 898RMS On-State Current, Ip(aos)- + ee ee eee eee 225 Amperes Peak One Cycle Surge (Non-Repetitive) On-State Current, Ir gm (60 Hz) ......... 0... c ee eee eee 1600 Amperes Peak One Cycle Surge (Non-Repetitive) On-State Current, Ipsy (50 Hz)... 1... 00... eee ee 1500 Amperes I?t (for fusing) for times > 1.5 milliseconds .. 2.2... 0.0 ce eee 5,200 (RMS Ampere)? Seconds It (for fusing) for times > 8.3 milliseconds .......... beeen eens 10,500 (RMS Ampere)? Seconds Critical Rate-of-Rise of On-State Current, Non-Repetitive.... 2... .0.0.0 00.002 cee eee ee ee ee 800 A/us f Critical Rate-of-Rise of On-State Current, Repetitive... .. De eee eee ee eee 500 A/us + Average Gate Power Dissipation, Pagay).......-- +++ vee ee ee ee es 2 Watts Storage Temperature, Tyg . 2... eee ee eee Lee ee eee ne teenies -40C to +150C Operating Temperature, Ty .................0000. Dee eect eee eee ee eee eens -40C to +125C Mounting Force 2.0... ce ee ee ee nee eee eee e nee 800 Lbs. + 10% 3.56 KN + 10% tdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated VpRM; 20 volts, 20 ohms gate trigger source with 0.5us short circuit trigger current rise time. CHARACTERISTICS TEST SYMBOL]! MIN. TYP. MAX. UNITS TEST CONDITIONS Repetitive Peak Reverse IpRM mA. Ty = +25C, Vprm = Vrrm = and Off-State Current and C358E IpRM 3 10 500 Volts C358M _ 3 10 600 C358S - 3 10 700 C358N _ 3 10 800 C358T - 3 9 900 C358P 3 7 1000 C358PA 3 7 1100 C358PB _ 3 7 1200 Repetitive Peak Reverse IrRM mA Ty = 125C, Vprm = Varo = and Off-State Current and C358E IpRM _ 12 15 500 Volts C358M 12 15 600 C3588 12 15 700 C358N _ 12 15 800 C358T 12 15 900 C358P _ 12 15 1000 C358PA 12 17 1100 C358PB - 12 18 1200 Thermal Resistance Rgic _ 12 .135 | C/Watt | Junction-to-Case Double-Side Cooled - 15 .26 Junction-to-Case Single-Side Cooled Critical Rate-of-Rise of dv/dt 200 500 _ Viusec | Ty = +125C, Gate Open. Vprm = Rated Off-State Voltage (Higher Linear or Exponential Rising Waveform. ath cause device Exponential dv/dt = pr (.632) Higher minimum dv/dt selections available consult factory. Holding Current Ip _ 100 500 mAdc | Tc = +25C, Anode Supply = 24 Vdc. Initial On-State Current = 2 Amps. DC Gate Trigger Current Igr _ 50 150 mAdc | Te = +25C, Vp = 6 Vdc, Ry = 3 Ohms _ 75 300 Tce = -40C, Vp = 6 Vdc, Ry = 3 Ohms 15 125 Te = +125C, Vp = 6 Vdc, Ry = 3 Ohms DC Gate Trigger Voltage Ver - 3 5 Vde Tc =-40C to 0C, Vp = 6Vde, Ry = 3 Ohms 1.25 3. To =0C to +125C, Vp =6 Vde, Ry =3 Ohms 0.15 _ 7 Tc = 125C, VpRM> Ru = 1000 Ohms Peak On-State Voltage Vrm 2.8 3. Volts Tc = +25C, Ip = 500 Amps. Peak. Duty Cycle < .01%. 899[case | CHARACTERISTICS (continued) TEST SYMBOL] MIN. TYP. MAX, UNITS TEST CONDITION Turn-On Delay Time ta 0.5 _ usec | Tc = +25C, Ip = 50 Adc, Vppm, Gate Supply: 20 volt open circuit, 20 ohm, 0.1 usec max. rise time. tt, TTT Conventional Circuit tg jasec (1) Te = +125C Commutated Turn-Off (2) Ipy = 150 Amps. Time (with Reverse (3) Vp = 50 Volts Min. Voltage) _ 25 40 (4) Vorm (Reapplied) Faster Maximum Turn- (5) Rate-of-Rise of Reapplied Off-State Off Times Available Voltage = 200 V/usec (Linear) Consult Factory , (6) Commutation di/dt = 5 Amps/sec. (7) Repetition Rate = 1 pps. (8) Gate bias during turn-off interval = 0 volts, 100 ohms Conventional Circuit tg - 40 + sec (1) Te = +125C Commutated Turn-Off (diode) (2) Ipm = 150 Amps. Time (with Feedback Diode) (3) Vea = 1 Volt (4) VprM (Reapplied) (5) Rate-of-Rise of Reapplied Off-State Voltage = 200 V/usec (Linear). (6) Commutation di/dt = 5 Amps/usec. (7) Repetition Rate = 1 pps. (8) Gate bias during turn-off interval = 0 volts, 100 ohms Consult factory for specified maximum turn-off time. { Delay time may increase significantly as the gate drive approaches the Igy of the device undef test (D.U.T.). +t7Current risetime as measured with a current probe, or voltage risetime across a non-inductive resistor. PEAK ON-STATE 1. 100 1000 PULSE BASE WIDTH-MICROSECONDS lOK MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. PULSE WIDTH (Tc = 65C) 900SINE WAVE CURRENT RATING DATA C358 PEAK ON-STATE CURRENT ~- AMPERES too 1000 PULSE BASE WIDTH - MICROSECONDS 2. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. PULSE WIDTH (Tc = 90C) PEAK ON-STATE CURRENT-AMPERES ie) 100 1000 OK PULSE WIDTH-MICROSECONDS 3. ENERGY PER PULSE FOR SINUSOIDAL PULSES NOTES: (Pertaining to Sine and Rectangular Wave Current Ratings) 1. 2. 3. 4. Switching voltage = 800 volts. Maximum ckt. dv/dt = 200 volts/usec. Reverse voltage applied = 50V < VR < 800 volts. Required gate drive: 20 volts, 65 ohms, tusec rise time for less than 100 amps/ysec. 20 volts, 20 ohms, .5usec rise time for greater than 100 amps/psec. 901 Non R-C Snubber ckt, = .2uF, 52. Double-Side Cooled. Max. energy dissipated during reverse recovery to be 15% of total W-S/P shown in chart 5 or 0.03 W-S/P whichever is least. Values of W-S/P are for Tj = 125C.TRAPEZOIDAL WAVE CURRENT RATING DATA DUTY CYCLE 50% nha oOo 90 Oo O ol 2 PULSES PER SECOND 50 I 000 2500 nN 5 oO a 3 5000 3 PEAK ON-STATE CURRENT (AMPERES) 5 7 10 15 20 30 40 60 80 100 RATE OF RISE ON-STATE CURRENT-AMPERES PER MICROSECOND 4. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. di/dt (Te = 65C) PULSES PER SECOND 3} a 5 7 10 20 RATE OF RISE ON-STATE CURRENT-AMPERES PER MICROSECOND 30 640 60 80 100 5. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. di/dt (Tc = 90C) 902 PEAK ON-STATE CURRENT (AMPERES) 500 400 300 200 DUTY CYCLE 25% 2500 PUL 50 SES PER sEconp 5000 00 5 7 10 15 20 30 40 60 80 100 RATE OF RISE ON-STATE CURRENT-AMPERES PER MICROSECOND 6. MAXIMUM ALLOWABLE PEAK ON-STATE PEAK ON-STATE CURRENT ( AMPERES) 8 88 np o CURRENT VS. di/dt (Tc = 65C) 3 3 a o 5 7 10 20 RATE OF RISE ON-STATE CURRENT-~AMPERES PER MICROSECOND 30 40 60 80 100 7. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. di/dt (Te = 90C)PEAK ON-STATE CURRENT (AMPERES) PEAK ON- STATE CURRENT (AMRERES) PEAK ON-STATE CURRENT (AMPERES) WATT-SECOND PER PULSE 20 40 60 80 100 200 400 600 1000 2000 800 PULSE BASE WIDTH- MICROSECONDS 7.0 WAT T- SEC PER PULSE 4000 6000 10,000 8000 8. ENERGY PER PULSE VS. PEAK CURRENT AND PULSE WIDTH (di/dt = 100 A/usec) 7.0 WATT-SEC 20 40 60 80 100 200 400 600 800 1000 2000 PULSE BASE WIOTH - MICROSECONDS PER PULSE 4000 6000 [0,000 8000 9. ENERGY PER PULSE VS. PEAK CURRENT AND PULSE WIDTH (di/dt = 25 A/usec) 7.0 WATT ~ SEC 20 40 60 80 100 200 400 600 tooo 2000 800 PULSE BASE WIDTH ~ MiICROSECONDS PER PULSE 4000 6000 10,000 8000 10. ENERGY PER PULSE VS. PEAK CURRENT AND PULSE WIDTH (di/dt = 5 A/usec) 903RGE - Qpirec) - MICROCOULOMBS RECO C358 too 80 60 40 20 (000 INSTANTANEOUS ON-STATE CURRENT-AMPERES PEAK HALF SINE WAVE 6 35 125C 25C 0 t 2 3 4 5 6 7 8 9 10 INSTANTANEOUS ON-STATE VOLTAGE -VOLTS 11. MAXIMUM ON-STATE CHARACTERISTICS 2000 1700 a w 1500s & a ee = aq. t200 MS & hs 5 2 1000 tu q - 2 800 5 INITIAL Ty = ~40C TO +125C 600; is 2 3 4 6 8 10 20 40. 60 NUMBER OF CYCLES AT 60 Hz 13. SURGE (NON-REPETITIVE) ON-STATE CURRENT 60 80 100 2 4 6 8 10 20 40 REVERSE di/dt - AMPERES PER MICROSECOND 15. TYPICAL RECOVERED CHARGE (125C) SINE WAVE CURRENT WAVEFORM 904 + o we o Nn 3 LOCUS OF POSSIBLE oc TRIGGER POINTS we han @ 25C Oc 20V, 200, LOADLINE INSTANTANEOUS GATE .VOLTAGE -(VOLTS) 10 2 3 4 6 8 10 20 3.0 40 INSTANTANEOUS GATE CURRENT -(AMPERES) 60 8.0 10.0 12. GATE TRIGGER CHARACTERISTICS AND POWER RATINGS ~ 15,000 12,500 a % 10,000 ow - @ 8000 6000 = x 5000 4000 - INITIAL Ty = -40C TO +#125C 3000 aL swe g 425% 2000 how ae wHRood 1500 - 1000, LS 2 3 4 6 8 10 PULSE BASE WIDTH - MILLISECONDS 14. SUB-CYCLE SURGE (NON-REPETITIVE) ON-STATE CURRENT AND It RATING 100 60 40 200 20 T7m=S0A 40 REVERSE di/dt - AMPERES PER MICROSECOND 16. TYPICAL RECOVERED CHARGE (25C) SINE WAVE CURRENT WAVEFORM ! 2 4 6 8 10 20 60 80 100 RECOVERED CHARGE - Qarec) ~ MICROCOULOMBS fe)C PER WATT TRANSIENT THERMAL IMPEDANCE Ot tO01 Ol J ' lo 100 TIME - SECONOS 17. TRANSIENT THERMAL IMPEDANCE JUNCTION-TO-CASE OUTLINE DRAWING TABLE OF DIMENSIONS Conversion Table AUX. DECIMAL INCHES METRIC MM Af en HODE SYM|_MIN MAX. |__MIN. | MAX. ff A | .744 752 | 18.897 | 19.101 R-DIA B | .030 060 7621 1.524 S-peep LS 515 565 | 13.081 | 14.351 D 11.600 | 1.656 | 40.64 | 42.06 E | 110 2.794|. F | .o3l O17 .330| .432 G6 | .057 | .059 1.4471 1.449 H | 7.980 | 8.115 |202.70 [206.11 J ~300 7.620 K | 137 153 3.479| 3.886 L | .065 070 1.651| 1.778 M | .245 260 6.223| 6.604 N | 120 140 3.048/ 3.556 P| 1.090 | 1.125 | 27.69 | 28.55 R 135 145 3.429| 3.683 S O67 083 1.701 | 2.108 T | .340 8.636, U 186 189 4.724| 4.801 | oko allo ACCEPTS AMP. _ A __| TERMINAL # 60598-i TYP. OR EQUIVALENT H - STRAIGHT LEAD LENGTH, TYP. 2 LEADS T SURFACE CREEPAGE 905